公开(公告)号：US20120117262A1

公开(公告)日：2012-05-10

申请号：US13104457

申请日：2011-05-10

申请人： Jing Deng ,  Max Wu ,  Rajesh Rao ,  Fabio Hashimoto ,  Kenneth Westfield

发明人： Jing Deng ,  Max Wu ,  Rajesh Rao ,  Fabio Hashimoto ,  Kenneth Westfield

IPC分类号： G06F15/16

CPC分类号： H04L69/18 ,  H04L65/4084 ,  H04L65/80

摘要： A method and system are provided for simultaneously coupling to a plurality of client applications, receiving a first playback request from a first client application of the plurality of client applications, the first playback request being implemented in a first application specific protocol of the first client application, and a second playback request from a second client application of the plurality of client applications, the second playback request being implemented in a second application specific protocol of the second client application, wherein the first application specific protocol is different from the second application specific protocol and executing the first playback request and the second playback request by one or more players implemented in a single protocol.

摘要翻译： 提供了一种方法和系统，用于同时耦合到多个客户端应用程序，从多个客户端应用程序的第一客户端应用程序接收第一重放请求，第一重放请求在第一客户端应用程序的第一应用程序特定协议 以及来自所述多个客户端应用的第二客户端应用的第二重放请求，所述第二重放请求在所述第二客户端应用的第二应用特定协议中实现，其中所述第一应用特定协议与所述第二应用特定协议不同 以及由单个协议中实现的一个或多个播放器执行第一播放请求和第二播放请求。

公开(公告)号：US20090312558A1

公开(公告)日：2009-12-17

申请号：US12146569

申请日：2008-06-26

申请人： Sandeep Pandurang Bhujbal ,  Venkata Ramana Kondepati ,  Rajesh Rao ,  Jayaraman Venkat Raman

发明人： Sandeep Pandurang Bhujbal ,  Venkata Ramana Kondepati ,  Rajesh Rao ,  Jayaraman Venkat Raman

IPC分类号： C07D249/08 ,  C07C255/01 ,  C07C61/04 ,  C07C33/00

CPC分类号： C07C253/30 ,  C07C255/46

摘要： The present invention relates to an efficient process for preparing an arylcyclopropanecarbonitrile, which involves the use of sulfolane as a solvent.

摘要翻译： 本发明涉及一种制备芳基环丙烷腈的有效方法，其涉及使用环丁砜作为溶剂。

公开(公告)号：US20070077743A1

公开(公告)日：2007-04-05

申请号：US11240243

申请日：2005-09-30

申请人： Rajesh Rao ,  Leo Mathew

发明人： Rajesh Rao ,  Leo Mathew

IPC分类号： H01L21/3205 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/3086 ,  H01L21/3088 ,  H01L29/66795 ,  H01L29/785

摘要： A FinFET includes a plurality of semiconductor fins. Over a semiconductor layer, patterned features (e.g. of minimum photolithographic size and spacing) are formed. In one example of fin formation, a first set of sidewall spacers are formed adjacent to the sides of these patterned features. A second set of sidewall spacers of a different material are formed adjacent to the sides of the first set of sidewall spacers. The first set of sidewall spacers are removed leaving the second set of sidewall spacers spaced from the patterned features. Both the second set of sidewall spacers and the patterned features are used as a mask to an etch that leaves semiconductor fins patterned as per the second set of sidewall spacers and the patterned features. These resulting semiconductor fins, which have sub-lithographic spacings, are then used for channels of a FinFET transistor.

公开(公告)号：US20060211206A1

公开(公告)日：2006-09-21

申请号：US11084283

申请日：2005-03-18

申请人： Rajesh Rao ,  Ramachandran Muralidhar

发明人： Rajesh Rao ,  Ramachandran Muralidhar

IPC分类号： H01L21/8234 ,  H01L21/76

CPC分类号： H01L27/11526 ,  B82Y10/00 ,  H01L27/105 ,  H01L27/11546

摘要： A process for forming an electronic device can be performed, such that as little as one gate electric layer may be formed within each region of the electronic device. In one embodiment, the electronic device can include an NVM array and other regions that have different gate dielectric layers. By protecting the field isolation regions within the NVM array and other regions while gate dielectric layer are formed, the field isolation regions may be exposed to as little as one oxide etch between the time any of the gate dielectric layers are formed the time such gate dielectric layers are covered by gate electrode layers. The process helps to reduce field isolation erosion and reduce problems associated therewith.

摘要翻译： 可以执行用于形成电子器件的工艺，使得可以在电子器件的每个区域内形成少至一个栅极电层。 在一个实施例中，电子设备可以包括NVM阵列和具有不同栅介电层的其它区域。 通过在形成栅介质层的同时保护NVM阵列和其它区域内的场隔离区域，在形成任何栅极电介质层的时间之间，场隔离区可能暴露于少至一个氧化物蚀刻， 层被栅极电极层覆盖。 该过程有助于减少场隔离侵蚀并减少与之相关的问题。

公开(公告)号：US20060211199A1

公开(公告)日：2006-09-21

申请号：US11082094

申请日：2005-03-16

申请人： Rajesh Rao ,  Ramachandran Muralidhar ,  Robert Steimle

发明人： Rajesh Rao ,  Ramachandran Muralidhar ,  Robert Steimle

IPC分类号： H01L21/336

CPC分类号： H01L21/28273 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/42332 ,  H01L29/66825

摘要： A method for removing nanoclusters from a semiconductor device includes etching a selected portion of an insulating layer, flowing a reducing gas over the semiconductor device at a temperature in a range of 400-900 degrees Celsius, and flowing a gas comprising halogen over the semiconductor device a temperature in a range of 400-900 degrees Celsius. In another form, a method for removing the nanoclusters includes implanting germanium or nitrogen into the nanoclusters, etching a selected portion of the insulating layer using a dry etch process, and removing the layer of nanoclusters using a wet etch process that is selective to an insulating layer.

摘要翻译： 一种用于从半导体器件中去除纳米团簇的方法包括：在400-900摄氏度的温度范围内蚀刻绝缘层的选定部分，使还原气体在半导体器件上流动，并使包含卤素的气体流过半导体器件 温度在400-900摄氏度的范围内。 在另一种形式中，用于去除纳米团簇的方法包括将锗或氮注入到纳米团簇中，使用干蚀刻工艺蚀刻绝缘层的选定部分，以及使用对绝缘选择性的湿蚀刻工艺去除纳米团簇层 层。

公开(公告)号：US20060194438A1

公开(公告)日：2006-08-31

申请号：US10876820

申请日：2004-06-25

申请人： Rajesh Rao ,  Ramachandran Muralidhar ,  Robert Steimle ,  Gowrishankar Chindalore

发明人： Rajesh Rao ,  Ramachandran Muralidhar ,  Robert Steimle ,  Gowrishankar Chindalore

IPC分类号： H01L21/302 ,  H01L31/112 ,  H01L21/36

CPC分类号： H01L27/11546 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/42332

摘要： A plurality of memory cell devices is formed by using an intermediate dual polysilicon-nitride control electrode stack overlying nanoclusters. The stack includes a first-formed polysilicon-nitride layer and a second-formed polysilicon-containing layer. The second-formed polysilicon-containing layer is removed from areas containing the plurality of memory cells. In one form the second-formed polysilicon-containing layer also contains a nitride portion which is also removed, thereby leaving the first-formed polysilicon-nitride layer for the memory cell devices. In another form the second-formed ploysilicon-containing layer does not contain nitride and a nitride portion of the first-formed polysilicon-nitride layer is also removed. In the latter form a subsequent nitride layer is formed over the remaining polysilicon layer. In both forms a top portion of the device is protected from oxidation, thereby preserving size and quality of underlying nanoclusters. Gate electrodes of devices peripheral to the memory cell devices also use the second-formed polysilicon-containing layer.

摘要翻译： 通过使用覆盖纳米团簇的中间双重多晶氮化物控制电极堆叠形成多个存储单元器件。 堆叠包括第一形成的多晶氮化物层和第二形成的含多晶硅的层。 第二形成的含多晶硅的层从包含多个存储单元的区域中去除。 在一种形式中，第二形成的含多晶硅的层还包含也被去除的氮化物部分，从而留下用于存储单元器件的第一形成的多晶氮化物层。 在另一种形式中，第二形成的含硅层不含有氮化物，并且还去除了第一形成的多晶氮化物层的氮化物部分。 在后一种形式中，在剩余的多晶硅层上形成随后的氮化物层。 在这两种形式中，器件的顶部部分被保护免受氧化，从而保持下面的纳米簇的尺寸和质量。 存储单元器件外围的器件的栅电极也使用第二形成的含多晶硅的层。

公开(公告)号：US20060189079A1

公开(公告)日：2006-08-24

申请号：US11065519

申请日：2005-02-24

申请人： Tushar Merchant ,  Ramachandran Muralidhar ,  Rajesh Rao ,  Matthew Stoker ,  Sherry Straub

发明人： Tushar Merchant ,  Ramachandran Muralidhar ,  Rajesh Rao ,  Matthew Stoker ,  Sherry Straub

IPC分类号： H01L21/336

CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for forming nanoclusters includes providing a semiconductor substrate; forming a dielectric layer over the semiconductor substrate, exposing the semiconductor substrate to a first flux of atoms to form first nuclei on the dielectric layer, exposing the first nuclei to a first inert atmosphere after exposing the semiconductor substrate to the first flux, and exposing the semiconductor substrate to a second flux of atoms to form second nuclei after exposing the first nuclei to an inert atmosphere.

摘要翻译： 一种形成纳米团簇的方法包括提供半导体衬底; 在所述半导体衬底上形成电介质层，将所述半导体衬底暴露于所述第一原子通量，以在所述电介质层上形成第一核，在将所述半导体衬底暴露于所述第一焊剂之后，将所述第一核暴露于第一惰性气氛， 半导体衬底到第二个原子通量，以在将第一核暴露于惰性气氛之后形成第二核。

公开(公告)号：US20060166452A1

公开(公告)日：2006-07-27

申请号：US11043826

申请日：2005-01-26

申请人： Rajesh Rao ,  Ramachandran Muralidhar ,  Bruce White

发明人： Rajesh Rao ,  Ramachandran Muralidhar ,  Bruce White

IPC分类号： H01L21/331

CPC分类号： H01L29/42348 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/518

摘要： A nanocrystal non-volatile memory (NVM) has a dielectric between the control gate and the nanocrystals that has a nitrogen content sufficient to reduce the locations in the dielectric where electrons can be trapped. This is achieved by grading the nitrogen concentration. The concentration of nitrogen is highest near the nanocrystals where the concentration of electron/hole traps tend to be the highest and is reduced toward the control gate where the concentration of electron/hole traps is lower. This has been found to have the beneficial effect of reducing the number of locations where charge can be trapped.

摘要翻译： 纳米晶体非易失性存储器（NVM）在控制栅极和纳米晶体之间具有电介质，其具有足够的氮含量以减少电介质中的电子被俘获的位置。 这是通过对氮浓度进行分级而实现的。 靠近纳米晶体的氮浓度最高，其中电子/空穴阱的浓度趋于最高，并且朝向电子/空穴陷阱的浓度较低的对照栅极减小。 已经发现这具有减少电荷被捕获的位置数量的有益效果。

公开(公告)号：US20050049415A1

公开(公告)日：2005-03-03

申请号：US10493994

申请日：2002-10-28

申请人： Ramakrishna Arul ,  Rawat Ajaysingh ,  Mahesh Gadakar ,  Abhinay Pise ,  Rajesh Rao ,  Jayaraman Raman

发明人： Ramakrishna Arul ,  Rawat Ajaysingh ,  Mahesh Gadakar ,  Abhinay Pise ,  Rajesh Rao ,  Jayaraman Raman

IPC分类号： C07D495/04 ,  C07D498/02

CPC分类号： C07D495/04 ,  C07B2200/07

摘要： A process for preparing a substantially enantiomerically pure compound of formula (IV), or a pharmaceutically acceptable salt thereof wherein: R is hydrogen or a Cl alkyl group and X, Y and Z are any atom or group, comprising a step of isolating a substantially enantiomerically pure compound of formula (V) wherein: R3 is CN or C(O)NR1R2 and R1 and R2 are each independently hydrogen or a C1-C4 alkyl group, or, together with the nitrogen in the C(O)NR1R2 group, form a ring that includes 2-6 carbon atoms, from a racemate of formula (V) and converting the substantially enantiomerically pure compound of formula (V) into a substantially enantiomerically pure compound of formula (IV).

摘要翻译： 制备基本上对映体纯的式（IV）化合物或其药学上可接受的盐的方法，其中：R是氢或C1烷基，X，Y和Z是任何原子或基团，包括基本上分离 对映体纯的式（Ⅴ）化合物，其中：R 3为CN或C（O）NR 1 R 2，R 1和R 2各自独立地为氢或C 1 -C 4烷基，或者与C（O）NR 1 R 2基团中的氮一起， 由式（V）的外消旋物形成包含2-6个碳原子的环，并将基本上对映体纯的式（V）化合物转化为基本上对映体纯的式（IV）化合物。

公开(公告)号：US09762704B2

公开(公告)日：2017-09-12

申请号：US13104457

申请日：2011-05-10

申请人： Jing Deng ,  Max Wu ,  Rajesh Rao ,  Fabio Hashimoto ,  Kenneth Westfield

发明人： Jing Deng ,  Max Wu ,  Rajesh Rao ,  Fabio Hashimoto ,  Kenneth Westfield

IPC分类号： G06F15/16 ,  H04L29/06

CPC分类号： H04L69/18 ,  H04L65/4084 ,  H04L65/80

摘要： A method and system are provided for simultaneously coupling to a plurality of client applications, receiving a first playback request from a first client application of the plurality of client applications, the first playback request being implemented in a first application specific protocol of the first client application, and a second playback request from a second client application of the plurality of client applications, the second playback request being implemented in a second application specific protocol of the second client application, wherein the first application specific protocol is different from the second application specific protocol and executing the first playback request and the second playback request by one or more players implemented in a single protocol.