知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.015 秒)

    Method of plasma activated deposition of a conformal film on a substrate surface
    2.
    发明授权
    Method of plasma activated deposition of a conformal film on a substrate surface 有权
    在基材表面上等离子体激活沉积保形膜的方法

    公开(公告)号：US08728955B2

    公开(公告)日：2014-05-20

    申请号：US13409212

    申请日：2012-03-01

    申请人： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Konjolia

    发明人： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Konjolia

    IPC分类号： H01L21/469 ,  H01L21/302

    CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31116 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

    摘要： A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.

    摘要翻译： 在衬底表面上沉积膜的方法包括在反应室中提供衬底; 从二叔丁基重氮基硅烷，双（乙基甲基氨基）硅烷，双（二异丙基氨基）硅烷，双（叔丁基肼基）二乙基硅烷，三（二甲基氨基）甲硅烷基叠氮化物，三（二甲基氨基）甲硅烷基酰胺 ，乙基硅氧烷三氮化物，二异丙基氨基硅烷和六（二甲基氨基）二硅氮烷; 在允许含硅反应物吸附到基材表面上的条件下，将含硅反应物气相引入反应室; 将所述含硅反应物吸附在所述基材表面上的情况下，将气相中的第二反应物引入所述反应室，并且其中引入所述第二反应物而不先将所述含硅反应物从所述反应室中排出; 并将衬底表面暴露于等离子体以驱动衬底表面上的含硅反应物和第二反应物之间的反应以形成膜。

    Organometallic precursors for use in chemical phase deposition processes
    3.
    发明授权
    Organometallic precursors for use in chemical phase deposition processes 有权
    用于化学相沉积工艺的有机金属前体

    公开(公告)号：US08476467B2

    公开(公告)日：2013-07-02

    申请号：US12670022

    申请日：2008-07-24

    申请人： Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag

    发明人： Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag

    IPC分类号： C07F17/02

    CPC分类号： C23C16/45525 ,  C07F17/02 ,  C23C16/16 ,  C23C16/18

    摘要： An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X)  (Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

    摘要翻译： 提供有机金属前体。 前体在结构上对应于式I：Cp（R）nM（CO）2（X）（式I）其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为1,2,3,4或5.前体可用于化学相沉积工艺，例如原子层沉积（ALD）和化学气相沉积（CVD）。

    METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CHEMICAL PHASE DEPOSITION
    4.
    发明申请
    METHODS OF FORMING THIN METAL-CONTAINING FILMS BY CHEMICAL PHASE DEPOSITION 有权
    通过化学相沉积法形成含金属薄膜的方法

    公开(公告)号：US20100261350A1

    公开(公告)日：2010-10-14

    申请号：US12670023

    申请日：2008-07-24

    申请人： Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag ,  David Weyburne

    发明人： Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag ,  David Weyburne

    IPC分类号： H01L21/285 ,  C07F15/00

    CPC分类号： C23C16/16 ,  C07F17/02 ,  C23C16/18 ,  C23C16/45525

    摘要： Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

    摘要翻译： 提供通过化学相沉积，特别是原子层沉积（ALD）和化学气相沉积（CVD）形成含薄金属的膜的方法。 所述方法包括将至少一种有机金属前体递送至底物，其中所述至少一种前体在结构上对应于式（II）; 其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为零，1,2,3,4或5.进一步提供了制备本文所述前体的方法。

    Methods of forming thin metal-containing films by chemical phase deposition
    5.
    发明授权
    Methods of forming thin metal-containing films by chemical phase deposition 有权
    通过化学相沉积法形成含薄金属膜的方法

    公开(公告)号：US08481121B2

    公开(公告)日：2013-07-09

    申请号：US12670023

    申请日：2008-07-24

    申请人： Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag ,  David Weyburne

    发明人： Ravi Kanjolia ,  Rajesh Odedra ,  Neil Boag ,  David Weyburne

    IPC分类号： C23C16/06 ,  C23C16/16

    CPC分类号： C23C16/16 ,  C07F17/02 ,  C23C16/18 ,  C23C16/45525

    摘要： Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C10-alkyl; X is C1-C10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

    摘要翻译： 提供通过化学相沉积，特别是原子层沉积（ALD）和化学气相沉积（CVD）形成含薄金属的膜的方法。 所述方法包括将至少一种有机金属前体递送至底物，其中所述至少一种前体在结构上对应于式（II）; 其中：M是Ru，Fe或Os; R是C 1 -C 10 - 烷基; X是C 1 -C 10 - 烷基; 并且n为零，1,2,3,4或5.进一步提供了制备本文所述前体的方法。

    Methods of atomic layer deposition using hafnium and zirconium-based precursors
    7.
    发明授权
    Methods of atomic layer deposition using hafnium and zirconium-based precursors 有权
    使用铪和锆基前体的原子层沉积方法

    公开(公告)号：US08039062B2

    公开(公告)日：2011-10-18

    申请号：US12207968

    申请日：2008-09-10

    申请人： Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

    发明人： Peter Nicholas Heys ,  Andrew Kingsley ,  Fuquan Song ,  Paul Williams ,  Thomas Leese ,  Hywel Owen Davies ,  Rajesh Odedra

    IPC分类号： C23C8/00 ,  C23C16/00

    CPC分类号： C23C16/45553

    摘要： Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III: wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.

    摘要翻译： 提供了通过原子层沉积法形成含金属膜的方法。 所述方法包括将至少一种前体递送至基底，其中所述至少一种前体在结构上相应于式II：其中：M是Hf或Zr; R是C 1 -C 6 - 烷基; n为零，1，2，3，4或5; L是C1-C6-烷氧基。 提供了通过液体注入原子层沉积形成含金属膜的其它方法。 所述方法包括将至少一种前体递送至基底，其中所述至少一种前体在结构上对应于式III：其中：M是Hf或Zr; R是C 1 -C 6 - 烷基; n为零，1，2，3，4或5; L是氨基，其中氨基任选独立地被C 1 -C 6烷基取代1或2次。

    Precursors for Plasma Activated Conformal Film Deposition
    8.
    发明申请
    Precursors for Plasma Activated Conformal Film Deposition 有权
    等离子体激活保形膜沉积的前体

    公开(公告)号：US20130210241A1

    公开(公告)日：2013-08-15

    申请号：US13409212

    申请日：2012-03-01

    申请人： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Kanjolia

    发明人： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Kanjolia

    IPC分类号： H01L21/31 ,  H01L21/3065 ,  C23C16/50

    CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31116 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

    摘要： A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.

    摘要翻译： 在衬底表面上沉积膜的方法包括在反应室中提供衬底; 从二叔丁基重氮基硅烷，双（乙基甲基氨基）硅烷，双（二异丙基氨基）硅烷，双（叔丁基肼基）二乙基硅烷，三（二甲基氨基）甲硅烷基叠氮化物，三（二甲基氨基）甲硅烷基酰胺 ，乙基硅氧烷三氮化物，二异丙基氨基硅烷和六（二甲基氨基）二硅氮烷; 在允许含硅反应物吸附到基材表面上的条件下，将含硅反应物气相引入反应室; 将所述含硅反应物吸附在所述基材表面上的情况下，将气相中的第二反应物引入所述反应室，并且其中引入所述第二反应物而不先将所述含硅反应物从所述反应室中排出; 并将衬底表面暴露于等离子体以驱动衬底表面上的含硅反应物和第二反应物之间的反应以形成膜。