公开(公告)号：US5111255A

公开(公告)日：1992-05-05

申请号：US533636

申请日：1990-06-05

申请人： Philip A. Kiely ,  Geoffrey W. Taylor

发明人： Philip A. Kiely ,  Geoffrey W. Taylor

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/10 ,  H01L29/43 ,  H01L29/778 ,  H01L29/80 ,  H01S5/062 ,  H01S5/20 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01L29/1029 ,  H01L29/432 ,  H01L29/7783 ,  H01L29/802 ,  H01S5/06203 ,  H01S5/20 ,  H01S5/34 ,  H01S5/0424 ,  H01S5/2059

摘要： A high transconductance field effect transistor is realized by controlling the doping level in a conducting channel buried beneath a heterointerface. In one exemplary embodiment, a channel comprising an undoped, high mobility, narrow band gap quantum well in combination with an intermediate band gap layer is formed beneath a heterointerface. The heterojunction interface is between a wide band gap layer and the quantum well region. A charge sheet having the same conductivity type as the wide bandgap layer is formed near the heterointerface. Advantageously, the transconductance is enhanced by conduction in the undoped filled quantum well region.

公开(公告)号：US06185240B2

公开(公告)日：2001-02-06

申请号：US09015896

申请日：1998-01-30

申请人： Wenbin Jiang ,  Paul R. Claisse ,  Philip A. Kiely

发明人： Wenbin Jiang ,  Paul R. Claisse ,  Philip A. Kiely

IPC分类号： H01S319

CPC分类号： H01S5/183 ,  H01L27/15 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06825

摘要： A vertical cavity surface emitting laser (103) and a diode (105) is provided. The diode (105) is electrically coupled in reverse parallel to the vertical cavity surface emitting laser (103), thereby providing a portion of protection against electro-static discharge damage to the vertical cavity surface emitting laser (103).

摘要翻译： 提供了垂直腔表面发射激光器（103）和二极管（105）。 二极管（105）与垂直空腔表面发射激光器（103）反向并联地电耦合，从而提供一部分保护以防止对垂直腔表面发射激光器（103）的静电放电损坏。

公开(公告)号：US6084900A

公开(公告)日：2000-07-04

申请号：US998365

申请日：1997-12-24

申请人： Paul R. Claisse ,  Philip A. Kiely ,  Jamal Ramdani ,  Wenbin Jiang

发明人： Paul R. Claisse ,  Philip A. Kiely ,  Jamal Ramdani ,  Wenbin Jiang

IPC分类号： H01S5/40 ,  H01S5/42 ,  H01S3/23 ,  H01S3/085

CPC分类号： H01S5/423 ,  H01S2301/18 ,  H01S2301/203 ,  H01S5/18327 ,  H01S5/18344 ,  H01S5/18391 ,  H01S5/4087

摘要： An array of annular waveguide VCSELs for achieving a stable single high order mode light source characterized as emitting a plurality of emission beams of varying wavelengths. The device array including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack is etched to define a first VCSEL and at least one additional VCSEL, each VCSEL including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.

摘要翻译： 用于实现稳定的单个高阶模式光源的环形波导VCSEL的阵列，其特征在于发射多个不同波长的发射光束。 该器件阵列包括在与有源区匹配的Al x Ga 1-x As / Al y Ga 1-y As材料体系晶格中具有镜对的第一反射镜叠层。 有源区包括夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间的有源结构，该有源结构具有至少一个量子阱。 VCSEL还包括与第二包层区域匹配的第二反射镜堆叠晶格并且在Al x Ga 1-x As / Al y Ga 1-y As材料体系中具有镜对。 蚀刻第二反射镜叠层以限定第一VCSEL和至少一个附加VCSEL，每个VCSEL包括蚀刻区域，由此限定环形发射区域，通过该环形发射区域发射由环形波导VCSEL产生的光。