Abstract:
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.
Abstract:
A system including a central processing unit, a first memory channel being configured to couple the central processing unit to a first semiconductor memory unit, wherein the first memory channel is configured to be clocked with a first clock frequency, and a second memory channel being configured to couple the central processing unit to a second semiconductor memory unit, wherein the second memory channel is configured or configurable to be clocked with a second clock frequency smaller than the first clock frequency.
Abstract:
Method and device for transmitting outgoing useful signals and an outgoing clock signal. Useful signals and a clock signal are transmitted from a transmitter via a first line pair and a second line pair to a receiver. A first useful signal is transmitted in the form of a modulated difference between the electrical potentials of the first line pair. A second useful signal is transmitted in the form of a modulated difference between the electrical potentials of the second line pair. The clock signal is transmitted in the form of a modulated difference between the average value of the potentials of the first line pair and the average value of the potentials of the second line pair.
Abstract:
In an embodiment, a memory device comprises a clock generating unit being configured to generate a read clock signal, the clock generating unit being connected to a first clock signal contact configured to send the read clock signal, and the clock generating unit being connected to data signal contacts being configured to send data signals, the memory device being configured to send the data signals in a phase and frequency accurate (source synchronous) manner with regard to the read clock signal.
Abstract:
A method of training connections in a memory arrangement includes training a connection between a memory section and a receiver portion of a controller for controlling the memory arrangement before or simultaneously with a training of essentially all other connections between elements of the memory arrangement that are to be trained.
Abstract:
Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.
Abstract:
Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.
Abstract:
A memory system includes a number of integrated circuit chips coupled to a bus. Each of the integrated circuit chips has an input/output node coupled to the bus, the input/output node having a programmable on-die termination resistor. The input/output node of one of the integrated circuit chips is accessed via the bus. The programmable on-die termination resistor of each of the integrated circuit chips is independently set to a termination resistance. The termination resistance is determined by a transaction type and which of the plurality memory devices is being accessed, which information can be transmitted over a separate transmission control bus.
Abstract:
Method and apparatus for communication (e.g., transmitting and/or receiving) command, address and data signals from a memory device to a memory controller or vice versa. The data signals are transferred with a first rate and command signals and/or address signals are transferred with a second rate lower than a first rate. Additionally or alternatively a command sequence code identifying a command sequence from a predefined group of command sequences is transferred with the first or with the second rate.
Abstract:
A device for the production of standard compliant signals, for example pulse-type signals in a telecommunication network, serves the production and adaptation and/or pre-distortion of signals with a certain signal form, which is defined dependent on a standard signal form specified in a standard. The device comprises signal generation means (10) for the production of the signals with a certain signal form and signal adjustment means (20) for the adaptation or pre-distortion of the signals. The signal generation means (10) according to the invention are digitally realized, by using a programmable shift register (14), which contains multipliers specified by the standard signal form for multiplication with a digital input signal (1). The signal adjustment means (20) comprise substantially scalable digital filter arrangements in the form of a serial connection of digital filters (22) with a downstream multiplexer (24). Moreover, the invention provides attenuating means (50) for attenuation of the signal dependent on the characteristics of the telecommunication channel.