Memory arrangement
    1.
    发明授权
    Memory arrangement 失效
    内存安排

    公开(公告)号:US07536528B2

    公开(公告)日:2009-05-19

    申请号:US11679609

    申请日:2007-02-27

    IPC分类号: G06F13/00

    CPC分类号: G06F12/0607

    摘要: A memory arrangement includes an interface configured to transmit, code and/or decode data in the form of data packets in accordance with a predefined protocol. The memory arrangement includes at least two memory banks, each memory bank including at least one memory cell. The memory arrangement includes at least two memory-bank access devices configured to facilitate accessing the data of the at least one memory cell of each of the at least two memory banks. The memory arrangement includes at least two temporary storage devices configured to temporarily store data being transmitted between the interface and the at least two memory-bank access devices. Each of the at least two temporary storage devices is connected to the interface and to one of the at least two memory-bank access devices.

    摘要翻译: 存储器布置包括被配置为按照预定义的协议以数据分组的形式传输,编码和/或解码数据的接口。 存储器装置包括至少两个存储体,每个存储体包括至少一个存储单元。 存储器装置包括至少两个存储体存取装置,其被配置为便于访问至少两个存储体中的每一个的至少一个存储单元的数据。 存储器装置包括至少两个临时存储装置,其被配置为临时存储在接口和至少两个存储体存取装置之间传输的数据。 所述至少两个临时存储设备中的每一个连接到所述接口和所述至少两个存储体存取设备中的一个。

    REFRESHING THE CONTENT OF A MEMORY CELL OF A MEMORY ARRANGEMENT
    2.
    发明申请
    REFRESHING THE CONTENT OF A MEMORY CELL OF A MEMORY ARRANGEMENT 失效
    刷新内存安排的内存单元的内容

    公开(公告)号:US20080068913A1

    公开(公告)日:2008-03-20

    申请号:US11856621

    申请日:2007-09-17

    IPC分类号: G11C7/00

    CPC分类号: G11C11/406

    摘要: A method of refreshing the content of a memory cell of a memory arrangement includes selectively controlling a refreshing device of the memory arrangement via an interface of the memory arrangement or by an internal control device of the memory arrangement to refresh the content of the memory arrangement.

    摘要翻译: 刷新存储器装置的存储单元的内容的方法包括经由存储器装置的接口或存储器装置的内部控制装置选择性地控制存储器装置的刷新装置,以刷新存储器装置的内容。

    Memory module with a clock signal regeneration circuit and a register circuit for temporarily storing the incoming command and address signals
    3.
    发明授权
    Memory module with a clock signal regeneration circuit and a register circuit for temporarily storing the incoming command and address signals 有权
    具有时钟信号再生电路的存储器模块和用于临时存储输入命令和地址信号的寄存器电路

    公开(公告)号:US07334150B2

    公开(公告)日:2008-02-19

    申请号:US11002148

    申请日:2004-12-03

    IPC分类号: G06F1/04

    CPC分类号: G11C5/04 G11C5/063

    摘要: A semiconductor memory module includes a plurality of semiconductor memory chips and bus signal lines that supply an incoming clock signal and incoming command and address signals to the semiconductor memory chips. A clock signal regeneration circuit and a register circuit are arranged on the semiconductor memory module in a common chip packing connected to the bus signal lines. The clock signal regeneration circuit and the register circuit respectively condition the incoming clock signal and temporarily store the incoming command and address signals, respectively multiply the conditioned clock signal and the temporarily stored command and address signals by a factor of 1:X, and respectively supply to the semiconductor memory chips the conditioned clock signal and the temporarily stored command and address signals.

    摘要翻译: 半导体存储器模块包括多个半导体存储器芯片和总线信号线,其向半导体存储器芯片提供输入时钟信号和输入命令和地址信号。 时钟信号再生电路和寄存器电路以连接到总线信号线的公共芯片封装布置在半导体存储器模块中。 时钟信号再生电路和寄存器电路分别对输入的时钟信号进行调节,并临时存储输入的命令和地址信号,分别将经调节的时钟信号和临时存储的命令和地址信号乘以1:X,分别提供 对半导体存储器芯片调节时钟信号和临时存储的命令和地址信号。

    Integrated memory device and method of operating a memory device
    4.
    发明申请
    Integrated memory device and method of operating a memory device 审中-公开
    集成存储器件和操作存储器件的方法

    公开(公告)号:US20080028148A1

    公开(公告)日:2008-01-31

    申请号:US11496261

    申请日:2006-07-31

    IPC分类号: G06F12/00

    CPC分类号: G06F12/023

    摘要: An integrated memory device includes a memory core having a plurality of memory cells and a group of terminals for communication between the memory device and an external electronic device. A data buffer temporarily stores data. The data buffer is coupled to the group of terminals and to the memory core. The data buffer includes a plurality of data buffer sections. Each data buffer section is capable of temporarily storing at least one data frame and being accessible by a respective data buffer address. A data buffer control unit is also provided.

    摘要翻译: 集成存储器件包括具有多个存储器单元的存储器芯和用于存储器件和外部电子器件之间的通信的一组端子。 数据缓冲器临时存储数据。 数据缓冲器耦合到终端组和存储器核心。 数据缓冲器包括多个数据缓冲器部分。 每个数据缓冲器部分能够临时存储至少一个数据帧并且可由相应的数据缓冲器地址访问。 还提供了数据缓冲器控制单元。

    Semiconductor memory system and semiconductor memory chip
    5.
    发明申请
    Semiconductor memory system and semiconductor memory chip 有权
    半导体存储器系统和半导体存储器芯片

    公开(公告)号:US20070047372A1

    公开(公告)日:2007-03-01

    申请号:US11509092

    申请日:2006-08-24

    IPC分类号: G11C8/00

    摘要: A semiconductor memory system includes a semiconductor memory chip in which data, command, and address signals are transmitted serially between a memory controller and the semiconductor memory chip in signal frames in correspondence with a predetermined protocol. In a receive signal path within the semiconductor memory chip, a frame decoder for decoding the signal frames is arranged following a receiving interface device, and between the frame decoder and a memory core, an intermediate storage device is arranged which has a cell array including a multiplicity of memory cells, and an addressing and selector circuit to which address signals decoded by the frame decoder from command and/or write signal frames supplied by the memory controller are applied, for addressing the cell array and for selecting the write data to be written into the cell array and to be read out of the cell array.

    摘要翻译: 半导体存储器系统包括半导体存储器芯片,其中数据,命令和地址信号在与预定协议相对应的信号帧中的存储器控​​制器和半导体存储器芯片之间串行发送。 在半导体存储器芯片内的接收信号路径中,用于对信号帧进行解码的帧解码器被布置在接收接口设备之后,并且在帧解码器和存储器核心之间,布置中间存储设备,其具有包括单元阵列 多个存储器单元,以及寻址和选择器电路,由帧解码器从由存储器控制器提供的命令和/或写入信号帧解码的地址信号被应用于寻址单元阵列并用于选择要写入的写入数据 进入单元阵列并从单元阵列中读出。

    Memory system and method of accessing memory chips of a memory system
    6.
    发明申请
    Memory system and method of accessing memory chips of a memory system 失效
    存储器系统和访问存储器系统的存储器芯片的方法

    公开(公告)号:US20060291263A1

    公开(公告)日:2006-12-28

    申请号:US11128789

    申请日:2005-05-13

    IPC分类号: G11C5/06

    CPC分类号: G11C5/063

    摘要: A memory system and method is disclosed. In one embodiment, the memory system includes a memory controller and at least one memory module on which a certain number of semiconductor memory chips and connecting lines are arranged in a respectively specified topology. The connecting lines include first connecting lines forming transfer channels for a protocol based transfer of data and command signal streams from the memory controller to at least one of the memory chips on the memory module and from there to the memory controller, respectively. Second connecting lines are routed separately from the memory controller directly to at least one of the memory chips on the memory module for transferring select information to the at least one memory chip separately from the data and command signal streams.

    摘要翻译: 公开了一种存储器系统和方法。 在一个实施例中,存储器系统包括存储器控制器和至少一个存储器模块,其中一定数量的半导体存储器芯片和连接线被布置在分别指定的拓扑中。 连接线包括形成传输通道的第一连接线,用于基于协议的数据传输和命令信号流从存储器控制器分别存储到存储器模块上的存储器芯片和存储器控制器中的至少一个。 将第二连接线从存储器控制器直接路由到存储器模块上的至少一个存储器芯片,用于将选择信息与数据和命令信号流分离地传送到至少一个存储器芯片。

    Synchronization and data recovery device
    7.
    发明申请
    Synchronization and data recovery device 审中-公开
    同步和数据恢复设备

    公开(公告)号:US20060193414A1

    公开(公告)日:2006-08-31

    申请号:US11345668

    申请日:2006-02-02

    IPC分类号: H04L7/00

    摘要: A synchronization and data recovery device (SuD) for clock-synchronized recovery of data bits in a data stream is provided, which is particularly suitable for improved backward identification of data in serial receiver interfaces of high-speed semiconductor memory modules and/or memory controller modules with a low data density. The SuD includes a sampling unit, a data adjustment unit, a digital monitoring unit, a phase lock detector unit, a phase generator, an FIR low-pass filter and a data recovery decision unit. After synchronization of the values that have been sampled by the sampling unit in the data adjustment unit, these values are filtered in the FIR low-pass filter unit, which indicates a greater tolerance with respect to fluctuations in the ideal sampling time, in that it uses sample values of the previous symbol and of the subsequent symbol in addition to the sample values of the symbol to be identified.

    摘要翻译: 提供了用于数据流中数据位的时钟同步恢复的同步和数据恢复设备(SuD),其特别适用于改进高速半导体存储器模块和/或存储器控制器的串行接收器接口中数据的向后标识 具有低数据密度的模块。 SuD包括采样单元,数据调整单元,数字监视单元,锁相检测器单元,相位发生器,FIR低通滤波器和数据恢复判定单元。 在由数据调整单元中的采样单元采样的值同步之后,这些值在FIR低通滤波器单元中被滤波,这表示相对于理想采样时间的波动具有更大的公差,因为它 除了要识别的符号的样本值之外,还使用先前符号和后续符号的采样值。

    Method of transferring signals between a memory device and a memory controller
    9.
    发明授权
    Method of transferring signals between a memory device and a memory controller 有权
    在存储器件和存储器控制器之间传送信号的方法

    公开(公告)号:US07587655B2

    公开(公告)日:2009-09-08

    申请号:US11259376

    申请日:2005-10-26

    IPC分类号: G11C29/00

    CPC分类号: G11C8/18

    摘要: Method and apparatus for communication (e.g., transmitting and/or receiving) command, address and data signals from a memory device to a memory controller or vice versa. The data signals are transferred with a first rate and command signals and/or address signals are transferred with a second rate lower than a first rate. Additionally or alternatively a command sequence code identifying a command sequence from a predefined group of command sequences is transferred with the first or with the second rate.

    摘要翻译: 用于从存储器设备到存储器控制器的通信(例如,发送和/或接收)命令,地址和数据信号的方法和装置,反之亦然。 数据信号以第一速率传送,命令信号和/或地址信号以低于第一速率的第二速率传送。 附加地或替代地,从预定义的命令序列组识别命令序列的命令序列代码以第一速率或第二速率传送。

    Controller
    10.
    发明申请
    Controller 审中-公开
    控制器

    公开(公告)号:US20080222443A1

    公开(公告)日:2008-09-11

    申请号:US11813952

    申请日:2006-01-04

    IPC分类号: G06F1/08

    CPC分类号: H03M9/00

    摘要: The invention relates to a controller for generating control signals (evload_o, odload_o, st_chgclk_o, clk_o , clkorfiford_i) synchronous with a continuous clock signal (clk_hr_i) input to it for a device (1) to be controlled synchronously with the clock signal (clk_hr_i), wherein the controller (SE) has: register means for registering at least one set signal (st_load_i, st_fiford_i), comprising a plurality of bit positions, counting means for counting edges of the clock signal (clk_hr_i) depending on one or a plurality of set signals respectively registered in the register means, and synchronization and output means for synchronizing a value counted by the counting means with the clock signal (clk_hr_i) and the registered set signal and outputting at least one of the control signals, wherein the register means, the counting means and the synchronization and output means are configured and connected to one another in such a way that the output control signal(s), depending on the respectively registered set signal, occupies (occupy) one of a plurality of temporal positions with a respective phase difference of an integral multiple of half a clock cycle synchronously with the leading or trailing edge of the clock signal. The controller can be applied in particular for controlling the synchronous parallel-serial converter for converting a parallel input signal comprising k bit positions into a serial output signal sequence synchronously with the clock signal (clk_hr_i), which converter is provided in a transmitting circuit in the interface circuit of a very fast DDR DRAM semiconductor memory component of the coming memory generation (e.g. DDR4).

    摘要翻译: 本发明涉及一种与时钟信号(clk_hr_i)同步控制的与设备(1)输入的连续时钟信号(clk_hr_i)同步的控制信号(evload_o,odload_o,st_chgclk_o,clk_o,st_chgclk_o,clk_o,stkorfiford_i) ,其中所述控制器(SE)具有:寄存器装置,用于登记包括多个位位置的至少一个设置信号(st_load_i,st_fiford_i),用于根据一个或多个位位置对时钟信号(clk_hr_i)的边沿进行计数的计数装置 设置分别登记在寄存器装置中的信号,以及同步和输出装置,用于使由计数装置计数的值与时钟信号(clk_hr_i)和登记的设置信号同步,并输出至少一个控制信号,其中寄存器装置, 计数装置和同步和输出装置被配置和彼此连接,使得输出控制信号取决于相应的 有效登记的设定信号占据(占据)多个时间位置中的一个,具有与时钟信号的前沿或后沿同步的半个时钟周期的整数倍的相位差。 控制器可以特别用于控制同步并行 - 串行转换器,用于将包括k位位置的并行输入信号转换为与时钟信号(clk_hr_i)同步的串行输出信号序列,该时钟信号(clk_hr_i)被提供在发送电路中 接口电路的即将到来的存储器生成(例如DDR4)的非常快的DDR DRAM半导体存储器组件。