公开(公告)号：US20150325565A1

公开(公告)日：2015-11-12

申请号：US14272027

申请日：2014-05-07

Applicant: Hongning Yang ,  Xin Lin ,  Pete Rodriguez ,  Zhihong Zhang ,  Jiang-Kai Zuo

Inventor： Hongning Yang ,  Xin Lin ,  Pete Rodriguez ,  Zhihong Zhang ,  Jiang-Kai Zuo

IPC: H01L27/02 ,  H01L29/08 ,  H01L21/265 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L27/0248 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L27/0266 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/66575 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

Abstract: A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures includes a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor.

Abstract translation: 一种器件包括半导体衬底，第一组成晶体管，其包括彼此并联连接的半导体衬底中的第一多个晶体管结构;以及第二组成晶体管，包括在半导体衬底中并联连接的第二多个晶体管结构， 另一个。 第一和第二组成晶体管彼此横向相邻设置并彼此并联连接。 第一多个晶体管结构的每个晶体管结构包括非均匀沟道，使得第一构成晶体管具有比第二构成晶体管更高的阈值电压电平。

公开(公告)号：US09165918B1

公开(公告)日：2015-10-20

申请号：US14272027

申请日：2014-05-07

Applicant: Hongning Yang ,  Xin Lin ,  Pete Rodriguez ,  Zhihong Zhang ,  Jiang-Kai Zuo

Inventor： Hongning Yang ,  Xin Lin ,  Pete Rodriguez ,  Zhihong Zhang ,  Jiang-Kai Zuo

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/265

CPC classification number: H01L27/0248 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L27/0266 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/66575 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

Abstract: A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures includes a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor.

Abstract translation: 一种器件包括半导体衬底，第一组成晶体管，其包括彼此并联连接的半导体衬底中的第一多个晶体管结构;以及第二组成晶体管，包括在半导体衬底中并联连接的第二多个晶体管结构， 另一个。 第一和第二组成晶体管彼此横向相邻设置并彼此并联连接。 第一多个晶体管结构的每个晶体管结构包括非均匀沟道，使得第一构成晶体管具有比第二构成晶体管更高的阈值电压电平。