公开(公告)号：US20230058818A1

公开(公告)日：2023-02-23

申请号：US17886129

申请日：2022-08-11

Applicant: OXIDE CORPORATION

Inventor： Shinichi IMAI

IPC: G06T7/00 ,  H04N5/225 ,  G01N21/95

Abstract: A pattern inspection apparatus includes a light source, a detector, and an inspection unit. The light source is configured to emit light toward an inspection target including stacked silicon substrates. The light has a wavelength band that is greater than or equal to 1.2 micrometers and less than or equal to 5.0 micrometers. The detector is configured to detect transmitted light of the inspection target or reflected light of the inspection target out of the light emitted from the light source. The transmitted light is light transmitted through the inspection target. The reflected light is light reflected by the inspection target. The inspection unit is configured to perform pattern inspection on the basis of a detection result obtained by the detector.

公开(公告)号：US20040234867A1

公开(公告)日：2004-11-25

申请号：US10798974

申请日：2004-03-12

Applicant: Pioneer Corporation ,  National Institute for Materials Science ,  OXIDE Corporation

Inventor： Hideki Hatano ,  Youwen Liu ,  Kenji Kitamura ,  Shunji Takekawa ,  Masaru Nakamura ,  Yasunori Furukawa

IPC: G03H001/02

CPC classification number: G11B7/1275 ,  G03H1/02 ,  G03H1/26 ,  G03H1/2645 ,  G03H2001/0264 ,  G03H2001/266 ,  G03H2260/54 ,  G11B7/0045 ,  G11B7/243 ,  G11B7/2433 ,  G11B2007/24306 ,  G11B2007/2432

Abstract: A ferroelectric material in which the refractive index change can be induced by irradiation with light at two different wavelengths without performing a reduction treatment or doping impurities. The ferroelectric material of the invention in which the refractive index change is induced by irradiation with light at two different wavelengths is a lithium tantalate single crystal with the composition of Li2O/(Li2OnullTa2O5)null0.4966 to 0.4995. Preferably, the ferroelectric material is a lithium tantalate single crystal with the composition of Li2O/(Li2OnullTa2O5)null0.4974 to 0.4989. Preferably, the infrared absorption coefficient in the nullOHnull stretching mode falls within a range of 0 cmnull1 to 0.15 cmnull1 (0 cmnull1 and 0.15 cmnull1 are included in the range).

Abstract translation: 可以通过在两个不同波长的光照射而不进行还原处理或掺杂杂质来诱导折射率变化的铁电材料。 其中通过以两种不同波长的光照射而引起的折射率变化的本发明的铁电体材料是具有Li 2 O /（Li 2 O + Ta 2 O 5）= 0.4966至0.4995的组成的钽酸锂单晶。 铁电体材料优选为Li 2 O /（Li 2 O + Ta 2 O 5）= 0.4974〜0.4989的组成的钽酸锂单晶。 优选地，[OH]拉伸模式中的红外吸收系数落在0cm -1至0.15cm -1（0cm -1和0.15cm -1）的范围内 ）。

公开(公告)号：US20160116822A1

公开(公告)日：2016-04-28

申请号：US14896190

申请日：2015-05-12

Applicant: OXIDE CORPORATION

Inventor： Yushi KANEDA

IPC: G02F1/37 ,  H01S3/23 ,  H01S3/16 ,  H01S3/10 ,  H01S3/067 ,  H01S3/109

CPC classification number: G02F1/37 ,  G02F1/3534 ,  G02F2001/3507 ,  H01S3/0092 ,  H01S3/06754 ,  H01S3/10092 ,  H01S3/1062 ,  H01S3/109 ,  H01S3/1608 ,  H01S3/1616 ,  H01S3/1671 ,  H01S3/23

Abstract: In one embodiment, the present disclosure provides a deep ultraviolet laser generation device 1000 having a first laser source 100 at a first wavelength between 1.87 μm and 2.1 μm, a second laser source 200 at a second wavelength between 1.53 μm and 1.57 μm, a nonlinear wavelength conversion element 3 for generating near-infrared light 31 at a wavelength between 841 nm and 899 nm through a sum-frequency mixing (SFM) process, a nonlinear wavelength conversion element 4 for generating blue light 41 at a wavelength between 420 nm and 450 nm from the near-infrared light through a second harmonic generation (SHG) process, and a third nonlinear wavelength conversion element 5 for generating deep ultraviolet light 51 at a wavelength between 210 nm and 225 nm from the blue light, through another SHG process. The first laser source may be a thulium-doped laser source or a thulium-doped fiber source, and the second laser source may be a semiconductor laser source, an erbium-doped fiber source, or an erbium/ytterbium-doped fiber source.

Abstract translation: 在一个实施例中，本公开提供一种深紫外线激光产生装置1000，其具有在1.87μm和2.1μm之间的第一波长的第一激光源100，在1.53μm和1.57μm之间的第二波长处的第二激光源200， 波长转换元件3，用于通过和频混合（SFM）处理在841nm和899nm之间的波长处产生近红外光31，用于产生420nm至450nm波长的蓝光41的非线性波长转换元件4 通过二次谐波发生（SHG）工艺从近红外光中得到的深紫外光51，和通过另一SHG工艺从蓝光产生波长在210nm和225nm之间的深紫外光51的第三非线性波长转换元件5。 第一激光源可以是掺杂doped激光源或ium掺杂光纤源，第二激光源可以是半导体激光源，掺铒光纤源或掺铒/镱掺杂光纤源。

公开(公告)号：US20150010028A1

公开(公告)日：2015-01-08

申请号：US14374978

申请日：2012-09-19

Applicant: INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION NATIONAL INSTITUTES OF NATURAL SCIENCES ,  OXIDE CORPORATION

Inventor： Takunori Taira ,  Rakesh Bhandari ,  Yasunori Furukawa ,  Akio Miyamoto ,  Masayuki Habu ,  Tsuyoshi Tago

IPC: H01S3/109 ,  H01S3/02

CPC classification number: H01S3/109 ,  G02F1/3551 ,  G02F1/37 ,  G02F2001/3503 ,  G02F2001/3507 ,  G02F2001/354 ,  H01S3/02

Abstract: Provided is an external resonance-type laser device with high wavelength conversion efficiency in which a nonlinear optical crystal is disposed outside of a resonator. The laser device includes a laser generation device configured to generate high-intensity laser light, a nonlinear optical crystal on which the high-intensity laser light generated by the laser generation device is incident and which is configured to generate a second harmonic wave light, and a different-element-fluxless-grown nonlinear optical crystal on which the second harmonic wave light generated by the nonlinear optical crystal is incident and which is configured to generate a fourth harmonic wave light. In the laser device, the different-element-fluxless-grown nonlinear optical crystal is not damaged even when high-intensity laser light of 100 MW/cm2 or more is incident.

Abstract translation: 提供一种非线性光学晶体设置在谐振器外部的具有高波长转换效率的外部谐振型激光器件。 激光装置包括：激光产生装置，其被配置为产生高强度激光;非线性光学晶体，其上由激光产生装置产生的高强度激光入射并且被配置为产生二次谐波光;以及 由非线性光学晶体产生的二次谐波入射并被配置为产生四次谐波光的不同元件无通量生长的非线性光学晶体。 在激光装置中，即使入射了100MW / cm 2以上的高强度激光，也不会损坏不同元件无助熔生长的非线性光学晶体。

公开(公告)号：US20220276187A1

公开(公告)日：2022-09-01

申请号：US17615814

申请日：2020-06-01

Applicant: The University of Tokyo ,  Oxide Corporation

Inventor： Shik Shin ,  Toshiyuki Taniuchi ,  Shinichi Imai ,  Kazuo Fujiura ,  Yasunori Furukawa

IPC: G01N23/227 ,  G02B21/06 ,  G02F1/35

Abstract: Provided are a high-energy and high-powered laser light source and a photoemission electron microscope using the laser light source. The laser light source 2 is intended for use in the photoemission electron microscope for emitting a quasi-continuous wave laser 7 and includes: a first laser light source 100 configured to emit a continuous wave coherent light 100a, an optical resonator 110 including an optical path in which the continuous wave coherent light 100a circulates and including a non-linear optical element 114 disposed on the optical path, and a quasi-continuous wave light source 120 configured to emit a quasi-continuous wave coherent light 120a having a wavelength shorter than that of the continuous wave coherent light 100a and having a near rectangular output waveform. When the quasi-continuous wave coherent light 120a is incident on the non-linear optical element 114 from outside the optical resonator 110 while the continuous wave coherent light 100a is entering the optical resonator 110 to circulate in the optical path, the quasi-continuous wave laser 7 having a wavelength shorter than that of the quasi-continuous wave coherent light 120a is emitted from the non-linear optical element 114.

公开(公告)号：US09429813B2

公开(公告)日：2016-08-30

申请号：US14896190

申请日：2015-05-12

Applicant: OXIDE CORPORATION

Inventor： Yushi Kaneda

IPC: H01S3/30 ,  G02F1/37 ,  H01S3/067 ,  H01S3/109 ,  H01S3/16 ,  H01S3/10 ,  H01S3/23

CPC classification number: G02F1/37 ,  G02F1/3534 ,  G02F2001/3507 ,  H01S3/0092 ,  H01S3/06754 ,  H01S3/10092 ,  H01S3/1062 ,  H01S3/109 ,  H01S3/1608 ,  H01S3/1616 ,  H01S3/1671 ,  H01S3/23

Abstract: In one embodiment, the present disclosure provides a deep ultraviolet laser generation device 1000 having a first laser source 100 at a first wavelength between 1.87 μm and 2.1 μm, a second laser source 200 at a second wavelength between 1.53 μm and 1.57 μm, a nonlinear wavelength conversion element 3 for generating near-infrared light 31 at a wavelength between 841 nm and 899 nm through a sum-frequency mixing (SFM) process, a nonlinear wavelength conversion element 4 for generating blue light 41 at a wavelength between 420 nm and 450 nm from the near-infrared light through a second harmonic generation (SHG) process, and a third nonlinear wavelength conversion element 5 for generating deep ultraviolet light 51 at a wavelength between 210 nm and 225 nm from the blue light, through another SHG process. The first laser source may be a thulium-doped laser source or a thulium-doped fiber source, and the second laser source may be a semiconductor laser source, an erbium-doped fiber source, or an erbium/ytterbium-doped fiber source.

Abstract translation: 在一个实施例中，本公开提供一种深紫外线激光产生装置1000，其具有在1.87μm和2.1μm之间的第一波长的第一激光源100，在1.53μm和1.57μm之间的第二波长处的第二激光源200， 波长转换元件3，用于通过和频混合（SFM）处理在841nm和899nm之间的波长处产生近红外光31，用于产生420nm至450nm波长的蓝光41的非线性波长转换元件4 通过二次谐波发生（SHG）工艺从近红外光中得到的深紫外光51，和通过另一SHG工艺从蓝光产生波长在210nm和225nm之间的深紫外光51的第三非线性波长转换元件5。 第一激光源可以是掺杂doped激光源或ium掺杂光纤源，第二激光源可以是半导体激光源，掺铒光纤源或掺铒/镱掺杂光纤源。