公开(公告)号：US08274125B2

公开(公告)日：2012-09-25

申请号：US12918023

申请日：2009-02-26

申请人： Junya Furuyashiki ,  Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Toshimasa Itooka ,  Hiroki Utatsu

发明人： Junya Furuyashiki ,  Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Toshimasa Itooka ,  Hiroki Utatsu

IPC分类号： H01L27/146

CPC分类号： H01L31/0203 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/451 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/8518 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10161 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2224/4554

摘要： An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.

摘要翻译： 在半导体元件的光接收部周围的部分设置有绝缘体，在绝缘体周围设置密封树脂，从而从光接收部观察时向外翘曲绝缘体，防止扩散光返回到受光部 的半导体元件。

公开(公告)号：US07961585B2

公开(公告)日：2011-06-14

申请号：US12331625

申请日：2008-12-10

申请人： Noriyuki Yoshikawa ,  Hiroyuki Ishida

发明人： Noriyuki Yoshikawa ,  Hiroyuki Ishida

IPC分类号： H01S5/022 ,  G11B7/00

CPC分类号： H01L23/49562 ,  G11B7/123 ,  G11B7/127 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： By increasing the width of a lead terminal 2 connected to a die pad 1 in the vicinity of the die pad 1 and forming a slit 9 and a projecting plate in the lead terminal in the region where resin 5 is formed, it is possible to ensure the holding strength of the lead terminal by the resin 5, as well as ensuring the strength of the lead terminal during the manufacturing process and achieving a reduction in thickness.

公开(公告)号：US20100157629A1

公开(公告)日：2010-06-24

申请号：US12613988

申请日：2009-11-06

申请人： Noriyuki Yoshikawa

发明人： Noriyuki Yoshikawa

IPC分类号： H02M3/335

CPC分类号： H02M1/36 ,  H01L2924/3511 ,  H02M3/33523

摘要： A switching power supply includes: a blanking period generating circuit for prohibiting a main switching element from being turned on from the time the main switching element is turned on to the time a blanking time elapses; a soft start period generating circuit for generating a soft start period from the start of the oscillation of the main switching element to the lapse of a soft start time; and a blanking time adjusting circuit for generating a signal for shortening the blanking time in the soft start period as compared with after the lapse of the soft start period.

摘要翻译： 开关电源包括：消隐周期发生电路，用于禁止主开关元件从主开关元件导通时开始到消隐时间过去的时间; 软启动周期产生电路，用于从主开关元件的振荡开始到软启动时间的过去产生软启动时段; 以及消隐时间调整电路，用于在软启动时段之后产生用于缩短软启动时段中的消隐时间的信号。

公开(公告)号：US20100046564A1

公开(公告)日：2010-02-25

申请号：US12510785

申请日：2009-07-28

申请人： Masanori Minamio ,  Noriyuki Yoshikawa ,  Shinichi Ijima

发明人： Masanori Minamio ,  Noriyuki Yoshikawa ,  Shinichi Ijima

IPC分类号： H01S3/00 ,  H01S5/00

CPC分类号： G11B7/127 ,  B29C45/0046 ,  B29C45/14655 ,  B29C45/14836 ,  B29C45/2708 ,  G11B7/22 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49562 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01S5/02244 ,  H01L2924/00

摘要： A semiconductor device includes: a first lead having an element mounting portion; a second lead located in a same plane as the first lead, with a predetermined space left between the first lead and the second lead; a molding encapsulant made of a resin for fixing the leads; and a semiconductor element affixed to a top surface of the element mounting portion of the first lead. The molding encapsulant covers at least part of each of upper and lower surfaces of the leads. A resin injection hole mark, which is a mark of a hole through which the encapsulant has been injected, is left on the encapsulant, and part of the resin injection hole mark is located above the first lead or the second lead, and the remaining part of the resin injection hole mark is located above a space between the first lead and the second lead.

摘要翻译： 一种半导体器件包括：具有元件安装部分的第一引线; 位于与所述第一引线相同的平面中的第二引线，在所述第一引线和所述第二引线之间留有预定空间; 由用于固定引线的树脂制成的模制密封剂; 以及固定到第一引线的元件安装部分的顶表面的半导体元件。 成型密封剂覆盖引线的上表面和下表面的每一个的至少一部分。 作为密封剂注入的孔的标记的树脂注入孔标记留在密封剂上，树脂注入孔标记的一部分位于第一引线或第二引线的上方，其余部分 的树脂注入孔标记位于第一引线和第二引线之间的空间的上方。

公开(公告)号：US20100008203A1

公开(公告)日：2010-01-14

申请号：US12525779

申请日：2008-03-10

申请人： Junya Furuyashiki ,  Syouzou Moribe ,  Hiroki Utatsu ,  Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Masanori Minamio ,  Hiroyuki Ishida

发明人： Junya Furuyashiki ,  Syouzou Moribe ,  Hiroki Utatsu ,  Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Masanori Minamio ,  Hiroyuki Ishida

IPC分类号： G11B7/00 ,  H01L31/02 ,  H01L21/50

CPC分类号： H01L27/14618 ,  G11B7/12 ,  H01L23/055 ,  H01L23/3185 ,  H01L24/97 ,  H01L27/14683 ,  H01L31/0203 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2224/85 ,  H01L2924/00

摘要： A semiconductor element is mounted on a rectangular base of a package including the base and ribs provided on a pair of opposite external edges of the base. Electrode pads of the semiconductor element and connection electrodes provided on rib upper surfaces are connected to each other by metal wires. On the rib upper surfaces, spacers are provided at locations closer to the outside than the connection electrodes. A transparent lid adheres to the upper surfaces of the spacers to cover the entire surface of the package. The height of the spacers is greater than the diameter of the metal wires.

摘要翻译： 半导体元件安装在包装件的矩形基座上，该基座和肋设置在基座的一对相对的外缘上。 设置在肋上表面上的半导体元件和连接电极的电极焊盘通过金属线彼此连接。 在肋上表面上，间隔件设置在比连接电极更靠近外部的位置处。 透明盖粘附到间隔物的上表面以覆盖整个包装的整个表面。 间隔件的高度大于金属丝的直径。

公开(公告)号：US20090097139A1

公开(公告)日：2009-04-16

申请号：US12203429

申请日：2008-09-03

申请人： Masanori Minamio ,  Hiroyuki Ishida ,  Noriyuki Yoshikawa

发明人： Masanori Minamio ,  Hiroyuki Ishida ,  Noriyuki Yoshikawa

IPC分类号： G02B7/00 ,  B29D11/00

CPC分类号： H01L24/97 ,  B29C45/14418 ,  B29C45/14655 ,  B29C2045/14663 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/0203 ,  H01L31/18 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83

摘要： An optical element mounted on a wiring board is sealed by a sealing resin except an optical function region. Wires connecting the wiring board with the optical element are also sealed by the sealing resin. The optical function region is exposed as a bottom surface of a recess whose side surface is formed by the sealing resin. A boundary portion between the side surface of the recess and a top surface portion and a boundary portion between the side surface and bottom surface of the recess have a rounded shape.

摘要翻译： 安装在布线板上的光学元件由光学功能区域以外的密封树脂密封。 将布线板与光学元件连接的电线也由密封树脂密封。 光学功能区域作为其侧表面由密封树脂形成的凹部的底表面露出。 凹部的侧表面与顶表面部分之间的边界部分和凹部的侧表面和底表面之间的边界部分具有圆形。

公开(公告)号：US20090086769A1

公开(公告)日：2009-04-02

申请号：US12186979

申请日：2008-08-06

申请人： Masanori MINAMIO ,  Noriyuki Yoshikawa ,  Shinichi Ijima ,  Toshiyuki Fukuda

发明人： Masanori MINAMIO ,  Noriyuki Yoshikawa ,  Shinichi Ijima ,  Toshiyuki Fukuda

IPC分类号： H01S3/30

CPC分类号： B82Y20/00 ,  G11B7/127 ,  H01L2224/48091 ,  H01S5/0021 ,  H01S5/0071 ,  H01S5/02212 ,  H01S5/02216 ,  H01S5/02224 ,  H01S5/02248 ,  H01S5/02292 ,  H01S5/024 ,  H01S5/02476 ,  H01S5/028 ,  H01S5/34333 ,  H01L2924/00014

摘要： A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element. The gas encapsulated with the package has an oxygen concentration not less than 15% and less than 30% and has a dew-point not less than −15° C. and not more than −5° C.

摘要翻译： 半导体器件包括光学半导体元件，包括由用于安装光学半导体元件的金属制成的基座的封装以及用于通过覆盖封装和光学半导体元件来封装光学半导体元件的盖和气体。 用包装封装的气体的氧浓度不小于15％且小于30％，露点不低于-15℃且不大于-5℃。

公开(公告)号：US20070170578A1

公开(公告)日：2007-07-26

申请号：US11584518

申请日：2006-10-23

申请人： Noriyuki Yoshikawa ,  Noboru Takeuchi ,  Kenichi Itou ,  Toshiyuki Fukuda

发明人： Noriyuki Yoshikawa ,  Noboru Takeuchi ,  Kenichi Itou ,  Toshiyuki Fukuda

IPC分类号： H01L23/12

CPC分类号： H01L23/49811 ,  H01L21/4846 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/1423 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/113 ,  H05K3/3436 ,  H05K2201/0367 ,  H05K2201/0394 ,  H05K2201/09509 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.

摘要翻译： 半导体器件具有上部电极和外部端子，该上部电极和外部端子突出在半导体器件用基板的两面之上，并且通过穿透电极彼此连接，除了第一绝缘膜的部分之外至少覆盖金属图案的第一绝缘膜 对应于上部电极的第二绝缘膜，覆盖除了与外部端子对应的第二绝缘膜的部分之外的至少另一种金属图案的第二绝缘膜，以及连接到上部电极并放置在半导体器件的基板上的半导体元件。 外部端子的焊接连接表面被定位成具有比第二绝缘膜的表面高的高度。 将半导体元件放置在第一绝缘膜上并与上部电极一起用模制树脂覆盖。

公开(公告)号：US20050056925A1

公开(公告)日：2005-03-17

申请号：US10960161

申请日：2004-10-06

申请人： Hideki Takehara ,  Noriyuki Yoshikawa ,  Kunihiko Kanazawa

发明人： Hideki Takehara ,  Noriyuki Yoshikawa ,  Kunihiko Kanazawa

IPC分类号： H01L23/28 ,  H01L23/00 ,  H01L23/12 ,  H01L23/31 ,  H01L23/552 ,  H05K1/02 ,  H05K3/00 ,  H05K3/28 ,  H05K9/00 ,  H01L23/14

CPC分类号： H05K3/284 ,  H01L23/3121 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/15159 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K1/0218 ,  H05K3/0052 ,  H05K2201/09918 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： In the high-frequency module of the present invention, an insulating resin is formed so as to seal a high-frequency semiconductor element mounted on a surface of a substrate and further to seal electronic components. Furthermore, a metal thin film is formed on the surface of the insulating resin. This metal thin film provides an electromagnetic wave shielding effect.

摘要翻译： 在本发明的高频模块中，形成绝缘树脂，以密封安装在基板的表面上的高频半导体元件，并进一步密封电子部件。 此外，在绝缘树脂的表面上形成金属薄膜。 这种金属薄膜提供电磁波屏蔽效果。

公开(公告)号：US5717249A

公开(公告)日：1998-02-10

申请号：US627656

申请日：1996-04-04

申请人： Noriyuki Yoshikawa ,  Kazuki Tateoka ,  Akihisa Sugimura ,  Kunihiko Kanazawa

发明人： Noriyuki Yoshikawa ,  Kazuki Tateoka ,  Akihisa Sugimura ,  Kunihiko Kanazawa

IPC分类号： H01L23/498 ,  H01L23/66 ,  H01L27/01 ,  H01L23/32 ,  H01L23/48

CPC分类号： H01L23/49833 ,  H01L23/49805 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/48091 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025

摘要： A plurality of ceramic substrates are stacked in layers to form a multilayer structure. A semiconductor chip having an FET or the like is mounted on the uppermost first ceramic substrate to form an RF matching circuit. A ground layer is formed on the second ceramic substrate, i.e., in a middle layer, thereby preventing the interference of electric signals between circuit components mounted in the respective layers upper and lower than the ground layer. A bias circuit is formed on the top face of the third ceramic substrate, while a back-face ground electrode is formed on the back face of the third ceramic substrate. A leadless electrode is formed over the side faces of the respective ceramic substrates and the back face of the lowermost third ceramic substrate. By utilizing the high heat conductivity and proper dielectric constant of aluminum nitride, the overall RF power amplifying circuit device can be miniaturized at lower cost.

摘要翻译： 多个陶瓷基板层叠以形成多层结构。 具有FET等的半导体芯片安装在最上面的第一陶瓷衬底上以形成RF匹配电路。 在第二陶瓷基板上即中间层形成接地层，从而防止电气信号在安装在上层和下层的各层之间的电路元件之间的干扰。 在第三陶瓷基板的顶面上形成有偏置电路，在第三陶瓷基板的背面形成背面接地电极。 在各个陶瓷基板的侧面和最下面的第三陶瓷基板的背面上形成无引线电极。 通过利用氮化铝的高导热性和适当的介电常数，可以以更低的成本将整个RF功率放大电路器件小型化。