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    GAS INJECTION UNIT FOR CHEMICAL VAPOR DESPOSITION APPARATUS
    2.
    发明申请
    GAS INJECTION UNIT FOR CHEMICAL VAPOR DESPOSITION APPARATUS 有权
    化学气相沉积装置气体注入装置

    公开(公告)号：US20110023782A1

    公开(公告)日：2011-02-03

    申请号：US12843604

    申请日：2010-07-26

    申请人： Myung Woo Han

    发明人： Myung Woo Han

    IPC分类号： C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

    摘要： A gas injection unit allows uniform cooling thereof via smooth flow of coolant and can be easily manufactured. The gas injection unit for a chemical vapor deposition apparatus includes, inter alia: a gas distribution housing; a cooling housing positioned between the gas distribution housing and a processing chamber where a deposition process is performed, and formed with a coolant inlet through which coolant is introduced, and a coolant outlet through which the coolant is discharged; a processing gas pipe of which one end is opened to the gas distribution housing and the other end is opened to the processing chamber, the processing gas pipe penetrating the cooling housing; and a first wall part positioned inside the cooling housing such that an inside of the cooling housing is partitioned into a central path and a peripheral path, and formed with a penetration hole such that the central path communicates with the peripheral path.

    摘要翻译： 气体喷射单元允许通过冷却剂的平稳流动来均匀地冷却，并且可以容易地制造。 用于化学气相沉积装置的气体注入单元尤其包括：气体分配壳体; 定位在气体分配壳体和执行沉积过程的处理室之间并且形成有冷却剂引入的冷却剂入口的冷却壳体以及冷却剂通过其排出的冷却剂出口; 处理气体管道，其一端向气体分配壳体开口，另一端向处理室开口，处理气体管道穿透冷却壳体; 以及位于所述冷却壳体内部的第一壁部，使得所述冷却壳体的内部被分隔成中心路径和周边路径，并且形成有贯通孔，使得所述中心路径与所述周边路径连通。

    CHEMICAL VAPOR DEPOSITION APPARATUS CAPABLE OF CONTROLLING DISCHARGING FLUID FLOW PATH IN REACTION CHAMBER
    7.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS CAPABLE OF CONTROLLING DISCHARGING FLUID FLOW PATH IN REACTION CHAMBER 有权
    化学气相沉积装置，可控制排放室中的流体流路

    公开(公告)号：US20110027480A1

    公开(公告)日：2011-02-03

    申请号：US12843681

    申请日：2010-07-26

    申请人： Myung Woo HAN

    发明人： Myung Woo HAN

    IPC分类号： C23C16/52

    CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45572 ,  C23C16/45574

    摘要： A chemical vapor deposition apparatus is equipped to control the width of a gas discharge path between a susceptor and an inner surface of a chamber without having to resort to redesign and remanufacturing of the apparatus. The chemical vapor deposition apparatus includes: a chamber; a susceptor positioned inside the chamber and on which a substrate can be loaded; a shower head injecting a processing gas toward the substrate; and a guide unit detachably installed inside the chamber to guide the processing gas such that the processing gas injected from the shower head is discharged through a chamber hole formed in the chamber.

    摘要翻译： 化学气相沉积装置被配备用来控制基座和室内表面之间的气体放电路径的宽度，而不用诉诸于设备的重新设计和再制造。 化学气相沉积装置包括：室; 位于室内的感受器，其上可以装载基底; 喷射头，将处理气体注入基板; 以及引导单元，其可拆卸地安装在所述室内以引导所述处理气体，使得从所述淋浴喷头喷射的处理气体通过形成在所述室中的室孔排出。