公开(公告)号：US20130126986A1

公开(公告)日：2013-05-23

申请号：US13300146

申请日：2011-11-18

Applicant: MaryJane Brodsky ,  Murshed M. Chowdhury ,  Michael P. Chudzik ,  Min Dai ,  Siddarth A. Krishnan ,  Shreesh Narasimha ,  Shahab Siddiqui

Inventor： MaryJane Brodsky ,  Murshed M. Chowdhury ,  Michael P. Chudzik ,  Min Dai ,  Siddarth A. Krishnan ,  Shreesh Narasimha ,  Shahab Siddiqui

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/518 ,  H01L21/28255 ,  H01L27/0922 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/78

Abstract: A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region.

Abstract translation: 一种半导体器件，包括在所述半导体衬底的沟道区上包括栅极结构的含锗衬底。 栅极结构可以包括与含锗衬底的上表面直接接触的氧化硅层，与氧化硅层直接接触的至少一个高k栅介质层和直接与锗氧化物层直接接触的至少一个栅极导体 与高k栅介质层接触。 氧化硅层和含锗衬底的上表面之间的界面基本上不含氧化锗。 源极区域和漏极区域可以存在于沟道区域的相对侧上。

公开(公告)号：US20120104515A1

公开(公告)日：2012-05-03

申请号：US13344431

申请日：2012-01-05

Applicant: Murshed M. Chowdhury ,  James K. Schaeffer

Inventor： Murshed M. Chowdhury ,  James K. Schaeffer

IPC: H01L29/78

CPC classification number: H01L21/823807 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: Embodiments of transistors comprise a gate stack overlying a semiconductor material. The gate stack comprises a deposited oxide layer overlying the semiconductor material, an oxygen-diffusion barrier layer overlying the deposited oxide layer, a high-k dielectric layer overlying the oxygen-diffusion barrier layer, and a conductive material (e.g., an oxygen-gettering conductive material) overlying the high-k dielectric layer. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.

Abstract translation: 晶体管的实施例包括覆盖半导体材料的栅极堆叠。 栅堆叠包括覆盖半导体材料的沉积氧化物层，覆盖沉积的氧化物层的氧扩散阻挡层，覆盖氧扩散阻挡层的高k电介质层和导电材料（例如，吸氧 导电材料）覆盖在高k电介质层上。 当导电材料是吸氧导电材料时，氧扩散阻挡层防止氧从沉积的氧化物层扩散到吸氧导电材料。

公开(公告)号：US08853792B2

公开(公告)日：2014-10-07

申请号：US13344431

申请日：2012-01-05

Applicant: Murshed M. Chowdhury ,  James K. Schaeffer

Inventor： Murshed M. Chowdhury ,  James K. Schaeffer

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/49 ,  H01L27/092 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L21/823807 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: Embodiments of transistors comprise a gate stack overlying a semiconductor material. The gate stack comprises a deposited oxide layer overlying the semiconductor material, an oxygen-diffusion barrier layer overlying the deposited oxide layer, a high-k dielectric layer overlying the oxygen-diffusion barrier layer, and a conductive material (e.g., an oxygen-gettering conductive material) overlying the high-k dielectric layer. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.

Abstract translation: 晶体管的实施例包括覆盖半导体材料的栅极堆叠。 栅堆叠包括覆盖半导体材料的沉积氧化物层，覆盖沉积的氧化物层的氧扩散阻挡层，覆盖氧扩散阻挡层的高k电介质层和导电材料（例如，吸氧 导电材料）覆盖在高k电介质层上。 当导电材料是吸氧导电材料时，氧扩散阻挡层防止氧从沉积的氧化物层扩散到吸氧导电材料。

公开(公告)号：US08114739B2

公开(公告)日：2012-02-14

申请号：US12568412

申请日：2009-09-28

Applicant: Murshed M. Chowdhury ,  James K. Schaeffer

Inventor： Murshed M. Chowdhury ,  James K. Schaeffer

IPC: H01L21/336

CPC classification number: H01L21/823807 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion barrier layer, forming a layer of conductive material overlying the layer of high-k dielectric material, selectively removing portions of the layer of conductive material, the layer of high-k dielectric material, the oxygen-diffusion barrier layer, and the oxide layer to form a gate stack, and forming source and drain regions about the gate stack. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.

Abstract translation: 提供了制造晶体管的方法。 一种示例性方法包括沉积覆盖在半导体材料层上的氧化物层，形成覆盖氧化物层的氧扩散阻挡层，形成覆盖氧扩散阻挡层的高k电介质材料层，形成导电材料层 覆盖高k电介质材料层，选择性地去除导电材料层的一部分，高k电介质材料层，氧扩散阻挡层和氧化物层以形成栅叠层，并形成源和 漏极区域。 当导电材料是吸氧导电材料时，氧扩散阻挡层防止氧从沉积的氧化物层扩散到吸氧导电材料。

公开(公告)号：US08809152B2

公开(公告)日：2014-08-19

申请号：US13300146

申请日：2011-11-18

Applicant: MaryJane Brodsky ,  Murshed M. Chowdhury ,  Michael P. Chudzik ,  Min Dai ,  Siddarth A. Krishnan ,  Shreesh Narasimha ,  Shahab Siddiqui

Inventor： MaryJane Brodsky ,  Murshed M. Chowdhury ,  Michael P. Chudzik ,  Min Dai ,  Siddarth A. Krishnan ,  Shreesh Narasimha ,  Shahab Siddiqui

IPC: H01L21/336

CPC classification number: H01L29/518 ,  H01L21/28255 ,  H01L27/0922 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/78

Abstract: A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer. The interface between the silicon oxide layer and the upper surface of the germanium containing substrate is substantially free of germanium oxide. A source region and a drain region may be present on opposing sides of the channel region.

Abstract translation: 一种半导体器件，包括在所述半导体衬底的沟道区上包括栅极结构的含锗衬底。 栅极结构可以包括与含锗衬底的上表面直接接触的氧化硅层，与氧化硅层直接接触的至少一个高k栅介质层和直接与锗氧化物层直接接触的至少一个栅极导体 与高k栅介质层接触。 氧化硅层和含锗衬底的上表面之间的界面基本上不含氧化锗。 源极区域和漏极区域可以存在于沟道区域的相对侧上。

公开(公告)号：US20110073964A1

公开(公告)日：2011-03-31

申请号：US12568412

申请日：2009-09-28

Applicant: Murshed M. Chowdhury ,  James K. Schaeffer

Inventor： Murshed M. Chowdhury ,  James K. Schaeffer

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/28

CPC classification number: H01L21/823807 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: Methods and apparatus are provided for fabricating a transistor. The transistor comprises a gate stack overlying a semiconductor material. The gate stack comprises a deposited oxide layer overlying the semiconductor material, an oxygen-diffusion barrier layer overlying the deposited oxide layer, a high-k dielectric layer overlying the oxygen-diffusion barrier layer, and an oxygen-gettering conductive layer overlying the high-k dielectric layer. The oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive layer.

Abstract translation: 提供了用于制造晶体管的方法和装置。 晶体管包括覆盖半导体材料的栅极堆叠。 栅极堆叠包括覆盖半导体材料的沉积氧化物层，覆盖沉积的氧化物层的氧扩散阻挡层，覆盖氧扩散阻挡层的高k电介质层，以及覆盖高分散电阻层的氧吸引导电层， k电介质层。 氧扩散阻挡层防止氧从沉积的氧化物层扩散到吸氧导电层。