公开(公告)号：US20150293928A1

公开(公告)日：2015-10-15

申请号：US14325177

申请日：2014-07-07

申请人： David Mo Chen ,  Huizhong Chen ,  Maryam Daneshi ,  Andre Filgueiras de Araujo ,  Bernd Girod ,  Shanghsuan Tsai ,  Peter Vajda ,  Matthew Chuck-Jun Yu

发明人： David Mo Chen ,  Huizhong Chen ,  Maryam Daneshi ,  Andre Filgueiras de Araujo ,  Bernd Girod ,  Shanghsuan Tsai ,  Peter Vajda ,  Matthew Chuck-Jun Yu

IPC分类号： G06F17/30

CPC分类号： H04N21/23418 ,  G06F16/24578 ,  G06F16/319 ,  G06F16/435 ,  G06F16/4387 ,  G06F16/5866 ,  G06F16/738 ,  G06F16/78 ,  G06F16/951 ,  G06K9/00718 ,  H04N21/222 ,  H04N21/233 ,  H04N21/23424 ,  H04N21/237 ,  H04N21/25891 ,  H04N21/26258 ,  H04N21/2665 ,  H04N21/2668 ,  H04N21/8126 ,  H04N21/8405 ,  H04N21/8455 ,  H04N21/8456 ,  H04N21/854

摘要： Systems and methods are described that can provide users with personalized video content feeds. In several embodiments, a multi-modal segmentation process is utilized that relies upon cues derived from video, audio and/or text data present in a video data stream. In a number of embodiments, video streams from a variety of sources are segmented. Links are identified between video segments and between video segments and online articles containing additional information relevant to the video segments. The additional information obtained by linking a video segment to an additional source of data can be utilized in the generation of personalized playlists. In the context of news programming, the dynamic mixing and aggregation of news videos from multiple sources can greatly enrich the news watching experience. In several embodiments, processes for linking video segments to additional sources of data can be implemented as part of a video search engine service.

摘要翻译： 描述了可以向用户提供个性化视频内容馈送的系统和方法。 在几个实施例中，利用依赖于视频数据流中存在的视频，音频和/或文本数据导出的提示的多模态分割过程。 在多个实施例中，来自各种来源的视频流被分段。 链接在视频段之间以及包含与视频段相关的附加信息的视频段和在线文章之间被标识。 通过将视频段链接到附加数据源获得的附加信息可用于生成个性化播放列表。 在新闻节目的上下文中，来自多个来源的新闻视频的动态混合和聚合可以大大丰富新闻观看体验。 在几个实施例中，将视频段链接到附加数据源的过程可以被实现为视频搜索引擎服务的一部分。

公开(公告)号：US08976257B2

公开(公告)日：2015-03-10

申请号：US13562894

申请日：2012-07-31

申请人： Mo Chen ,  Chun Jia

发明人： Mo Chen ,  Chun Jia

IPC分类号： H04N5/235 ,  G06K9/38

CPC分类号： H04N17/002 ,  H04N5/235

摘要： An automatic process for calibrating the optical image exposure value to compensate for changes in machine vision systems to maintain optimal exposure of captured images and adjust for the different characteristics among cameras components, such as imaging sensor sensitivity, LED strength, external lighting, reflective functions of any background material, different external lighting conditions, possible changes or updates of the systems over the years, such as LED changes, and even the aging of camera sensor and LEDs over time. A series of images of a target are captured with a predetermined sequence of exposure values, the saturation exposure percentage of a region of interest is calculated in each of the images, and the saturation exposure percentages are compared to determine the exposure value that has a saturation exposure percentage that varies the least from the saturation exposure value of the preceding and following exposure values.

摘要翻译： 用于校准光学图像曝光值的自动处理，以补偿机器视觉系统的变化，以保持拍摄图像的最佳曝光，并调整摄像机组件之间的不同特性，如成像传感器灵敏度，LED强度，外部照明，反射功能 任何背景材料，不同的外部照明条件，多年来系统的可能变化或更新，例如LED变化，甚至相机传感器和LED随时间的老化。 以预定的曝光值序列拍摄目标的一系列图像，在每个图像中计算感兴趣区域的饱和曝光百分比，并且比较饱和曝光百分比以确定具有饱和度的曝光值 曝光百分比与前一曝光值和后续曝光值的饱和曝光值之间的最小值变化最小。

公开(公告)号：US08778709B2

公开(公告)日：2014-07-15

申请号：US13479229

申请日：2012-05-23

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen ,  Shou-Shan Fan

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0066 ,  H01L33/06 ,  H01L33/22 ,  H01L33/24

摘要： A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.

摘要翻译： 制造发光二极管的方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。

公开(公告)号：US08574822B2

公开(公告)日：2013-11-05

申请号：US13479484

申请日：2012-05-24

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

IPC分类号： C08F2/50 ,  G03F1/00

CPC分类号： B29C59/026 ,  B82Y10/00 ,  B82Y40/00 ,  C08G59/245 ,  C08L63/00 ,  G03F7/0002 ,  Y10T428/31544 ,  Y10T428/31855

摘要： A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.

摘要翻译： 纳米压印抗蚀剂包括超支化聚氨酯低聚物，全氟聚醚，甲基丙烯酸甲酯，稀释剂溶剂和光引发剂。 超支化聚氨酯低聚物可以通过偏苯三酸酐，乙烯硫醇和环氧丙烯酸的共聚来聚合。 超支化聚氨酯低聚物也可以通过开环共聚环氧丙烯酸和乙二醇聚合。

公开(公告)号：US08502971B2

公开(公告)日：2013-08-06

申请号：US13092144

申请日：2011-04-21

申请人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

发明人： Zhen-Dong Zhu ,  Qun-Qing Li ,  Li-Hui Zhang ,  Mo Chen

IPC分类号： G01J3/44 ,  G01N15/06 ,  G01N21/00 ,  C12Q1/00 ,  C12M3/00 ,  C12P19/34

CPC分类号： G01N21/658 ,  Y02P20/582

摘要： A method for detecting single molecule includes providing a carrier. The carrier includes a substrate and a metal layer. The substrate has a surface and defines a number of blind holes caved in the substrate from the surface thereof. The metal layer covers the surface of the substrate and inner surfaces of the number of blind holes. Single molecule samples are disposed on the metal layer. The single molecule samples are detected by a Raman Spectroscopy system.

摘要翻译： 检测单分子的方法包括提供载体。 载体包括基底和金属层。 衬底具有表面并且限定了从其表面在衬底中凹陷的多个盲孔。 金属层覆盖基板的表面和盲孔数的内表面。 单分子样品设置在金属层上。 单分子样品通过拉曼光谱系统检测。

公开(公告)号：US20130143342A1

公开(公告)日：2013-06-06

申请号：US13479234

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/22

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/005 ,  H01L33/24

摘要： A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.

摘要翻译： 提供一种制造发光二极管的方法。 该方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。

公开(公告)号：US20130143340A1

公开(公告)日：2013-06-06

申请号：US13479229

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/06 ,  B82Y40/00

CPC分类号： H01L33/0079 ,  H01L33/0066 ,  H01L33/06 ,  H01L33/22 ,  H01L33/24

摘要： A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.

摘要翻译： 制造发光二极管的方法包括以下步骤。 提供基板。 在衬底的表面上生长第一半导体层。 图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。 暴露的第一半导体层被蚀刻以形成突出的一对。 通过去除图案化掩模层形成多个三维纳米结构。 在三维纳米结构的数量上依次生长有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。

公开(公告)号：US20130140596A1

公开(公告)日：2013-06-06

申请号：US13479233

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/22

CPC分类号： H01L33/24 ,  H01L33/005

摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括第一半导体层，有源层和第二半导体层的发光二极管。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。 第一电极覆盖第一半导体层的整个表面。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US20130140594A1

公开(公告)日：2013-06-06

申请号：US13479223

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/22

CPC分类号： H01L33/24 ,  H01L33/20 ,  H01L33/382

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 远离有源层的衬底的表面被配置为发光表面。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上。 第一电极与第一半导体层电连接。 第二电极与第二半导体层的表面电连接并覆盖其表面。 多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

公开(公告)号：US20130140520A1

公开(公告)日：2013-06-06

申请号：US13479230

申请日：2012-05-23

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  SHOU-SHAN FAN

IPC分类号： H01L33/06 ,  B82Y20/00

CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/22

摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

摘要翻译： 提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。 衬底包括外延生长表面和发光表面。 第一半导体层，有源层和第二半导体层堆叠在外延生长表面上。 第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。 有源层和第二半导体层以该顺序堆叠在第二表面上。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。