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    MULTI-PURPOSE MOUNTING DEVICES FOR MOUNTING ELECTRICAL PACKAGES TO AIRBORNE OBJECTS
    1.
    发明申请
    MULTI-PURPOSE MOUNTING DEVICES FOR MOUNTING ELECTRICAL PACKAGES TO AIRBORNE OBJECTS 有权
    用于安装电气套件到空中客车物体的多用途安装装置

    公开(公告)号：US20110026237A1

    公开(公告)日：2011-02-03

    申请号：US12643390

    申请日：2009-12-21

    申请人： James L. Porter ,  Matthew Glenn Murphy ,  Jesse H. Blake

    发明人： James L. Porter ,  Matthew Glenn Murphy ,  Jesse H. Blake

    IPC分类号： H02B1/01 ,  B23P23/00

    CPC分类号： F42B15/01 ,  F42B15/00 ,  H01Q1/1207 ,  H01Q1/28 ,  H01Q1/286

    摘要： Embodiments of a multi-purpose mounting device for mounting an electrical device to a structure coupled to an airborne object are provided. In one embodiment, the multi-purpose mounting device includes an adapter member and a slide member coupled to the adapter member. The slide member is radially spaced apart from the adapter member to form an open slot, which is configured to receive a portion of the external structural therein to secure the multi-purpose mounting device to the airborne object. A first mounting surface is provided on one of the adapter member and the slide member and configured to support the electrical device.

    摘要翻译： 提供了一种用于将电气设备安装到耦合到机载物体的结构的多用途安装装置的实施例。 在一个实施例中，多用途安装装置包括适配器构件和联接到适配器构件的滑动构件。 滑动构件与适配器构件径向间隔开以形成敞开的狭槽，其构造成容纳其中的外部结构的一部分以将多用途安装装置固定到机载物体上。 第一安装表面设置在适配器构件和滑动构件中的一个上并且构造成支撑电气装置。

    Semiconductor laser diode with narrow lateral beam divergence
    3.
    发明授权
    Semiconductor laser diode with narrow lateral beam divergence 有权
    半导体激光二极管具有窄横向光束发散

    公开(公告)号：US07602828B2

    公开(公告)日：2009-10-13

    申请号：US11938511

    申请日：2007-11-12

    申请人： Victor Rossin ,  Matthew Glenn Peters ,  Erik Paul Zucker

    发明人： Victor Rossin ,  Matthew Glenn Peters ,  Erik Paul Zucker

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20 ,  H01S5/2036 ,  H01S5/204 ,  H01S2301/18

    摘要： The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.

    摘要翻译： 本发明涉及结合提供增益引导和引导引导的结构的大功率广域半导体激光器。 索引引导区域的横向宽度大于增益引导区域的横向宽度至少20微米。 这导致大功率广域半导体激光器减少输出光束的横向发散。

    Semiconductor Laser Diode With Narrow Lateral Beam Divergence
    5.
    发明申请
    Semiconductor Laser Diode With Narrow Lateral Beam Divergence 有权
    半导体激光二极管具有窄的侧向束发散

    公开(公告)号：US20080112451A1

    公开(公告)日：2008-05-15

    申请号：US11938511

    申请日：2007-11-12

    申请人： Victor Rossin ,  Matthew Glenn Peters ,  Erik Paul Zucker

    发明人： Victor Rossin ,  Matthew Glenn Peters ,  Erik Paul Zucker

    IPC分类号： H01S5/22 ,  H01L33/00

    CPC分类号： H01S5/20 ,  H01S5/2036 ,  H01S5/204 ,  H01S2301/18

    摘要： The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.

    摘要翻译： 本发明涉及结合提供增益引导和引导引导的结构的大功率广域半导体激光器。 索引引导区域的横向宽度大于增益引导区域的横向宽度至少20微米。 这导致大功率广域半导体激光器减少输出光束的横向发散。

    Low phase-noise voltage controlled oscillator
    8.
    发明授权
    Low phase-noise voltage controlled oscillator 有权
    低相位噪声压控振荡器

    公开(公告)号：US06181216B2

    公开(公告)日：2001-01-30

    申请号：US09356953

    申请日：1999-07-19

    申请人： Matthew Glenn Waight

    发明人： Matthew Glenn Waight

    IPC分类号： H03B500

    CPC分类号： H03B5/1228 ,  H03B5/1203 ,  H03B5/1243 ,  H03B2201/0208

    摘要： An oscillator is formed using a Field-Effect Transistor (FET) in a Colpitts configuration. The circuit has a resistor from source to ground. Also connected to the source are two capacitors, one between the source and ground while the other is from source to gate. These capacitors provide a phase-shifted feedback signal to the gate. Also connected to the gate is the varactor tank, which has a voltage variable reactance that is used to tune the oscillation to the desired frequency. Between the drain of the FET and the supply voltage is a resistor-capacitor network. Between two series resistors a shunt capacitor is added to minimize local oscillator leakage onto the Vdd line. The resistor network also provides impedance for the Pre-Scalar output, which is simply a connection to the drain of the FET. The pre-scalar output is used to provide a reference signal to the phase-locked loop, which generates the correction voltage to the oscillator's VCO input. It is at the pre-scalar output that a filter network is added to reduce the base-band noise from the Vdd line. By adding a shunt network, consisting of a small inductor and a low ESR capacitor, the supply noise is filtered without reducing the voltage or current supplied to the oscillator. The inductor removes the shunt capacitance at the oscillation frequency, avoiding any reduction in signal to the phase-locked loop circuit. The low ESR capacitor works with the resistance on-chip between the Vdd line and the drain to reduce the low frequency noise present at the FET's drain. This reduction in low-frequency noise results in improved phase noise performance without degrading any other circuit parameters.

    摘要翻译： 使用Colpitts配置中的场效应晶体管（FET）形成振荡器。 该电路具有从源极到地电阻的电阻。 还连接到源的是两个电容器，一个在源极和地之间，而另一个来自源极。 这些电容器向门提供相移反馈信号。 还连接到门的是变容二极管，其具有用于将振荡调谐到期望频率的电压可变电抗。 在FET的漏极和电源电压之间是一个电阻 - 电容网络。 在两个串联电阻之间，增加了一个并联电容，以最大限度地减少Vdd线上的本地振荡器泄漏。 电阻网络还为Pre-Scalar输出提供阻抗，这只是连接到FET的漏极。 预标量输出用于向锁相环提供参考信号，该信号为振荡器的VCO输入产生校正电压。 在预标量输出端，添加一个滤波器网络以减少Vdd线路的基带噪声。 通过添加由小电感器和低ESR电容器组成的并联网络，电源噪声被滤波，而不降低提供给振荡器的电压或电流。 电感器在振荡频率下去除并联电容，避免信号向锁相环电路的任何减少。 低ESR电容器与Vdd线路和漏极之间的片上电阻一起工作，以降低FET漏极处的低频噪声。 这种低频噪声的降低导致改善的相位噪声性能而不降低任何其它电路参数。