公开(公告)号：US20120217530A1

公开(公告)日：2012-08-30

申请号：US13034267

申请日：2011-02-24

Applicant: John Adam Edmond ,  Matthew Donofrlo ,  Shawn Pyles

Inventor： John Adam Edmond ,  Matthew Donofrlo ,  Shawn Pyles

IPC: H01L33/36

CPC classification number: H01L33/38 ,  H01L33/08 ,  H01L33/405 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62

Abstract: A light emitting device includes a diode region comprising a first face and opposing edges, and a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face.

Abstract translation: 发光器件包括二极管区域，该二极管区域包括第一面和相对边缘，以及接合焊盘结构，其包括仅沿着第一面的相对边缘中的一个的至少三个接合焊盘。

公开(公告)号：US09362455B2

公开(公告)日：2016-06-07

申请号：US13034267

申请日：2011-02-24

Applicant: John Adam Edmond ,  Matthew Donofrlo ,  Shawn Pyles

Inventor： John Adam Edmond ,  Matthew Donofrlo ,  Shawn Pyles

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38 ,  H01L33/08 ,  H01L33/40 ,  H01L33/50 ,  H01L33/58

CPC classification number: H01L33/38 ,  H01L33/08 ,  H01L33/405 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62

Abstract: A light emitting device includes a diode region comprising a first face and opposing edges, and a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face.

Abstract translation: 发光器件包括二极管区域，该二极管区域包括第一面和相对边缘，以及接合焊盘结构，其包括仅沿着第一面的相对边缘中的一个的至少三个接合焊盘。

公开(公告)号：US20120211793A1

公开(公告)日：2012-08-23

申请号：US13361569

申请日：2012-01-30

Applicant: Michael John Bergmann ,  Christopher D. Williams ,  Kevin Shawne Schneider ,  Kevin Haberern ,  Matthew Donofrlo

Inventor： Michael John Bergmann ,  Christopher D. Williams ,  Kevin Shawne Schneider ,  Kevin Haberern ,  Matthew Donofrlo

IPC: H01L33/62

CPC classification number: H01L27/153 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32258 ,  H01L2224/3303 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4814 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

Abstract: A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.

Abstract translation: 发光二极管结构包括二极管区域和二极管区域上的金属堆叠。 金属堆叠包括二极管区域上的阻挡层和阻挡层上的结合层。 阻挡层在结合层和二极管区之间。 结合层包括金，锡和镍。 接合层中锡的重量百分比大于20％，接合层中的金的重量百分数小于约75％。 接合层中镍的重量百分数可以大于10％。