Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures

Invention Application

US20120217530A1 Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures 有权

Title translation: 具有多个焊盘和电流传播结构的半导体发光二极管

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Patent Title: Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures
Patent Title (中): 具有多个焊盘和电流传播结构的半导体发光二极管
Application No.: US13034267

Application Date: 2011-02-24
Publication No.: US20120217530A1

Publication Date: 2012-08-30
Inventor: John Adam Edmond , Matthew Donofrlo , Shawn Pyles
Applicant: John Adam Edmond , Matthew Donofrlo , Shawn Pyles
Main IPC: H01L33/36
IPC: H01L33/36

Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures

Abstract:

A light emitting device includes a diode region comprising a first face and opposing edges, and a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face.

Abstract(Chinese):

发光器件包括二极管区域，该二极管区域包括第一面和相对边缘，以及接合焊盘结构，其包括仅沿着第一面的相对边缘中的一个的至少三个接合焊盘。

Public/Granted literature

US09362455B2 Semiconductor light emitting diodes having multiple bond pads and current spreading structures Public/Granted day:2016-06-07

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L33/00	至少有一个电位跃变势垒或表面势垒的专门适用于光发射的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；这些半导体器件的零部件（H01L51/00优先；由在一个公共衬底中或其上形成有多个半导体组件并包括具有至少一个电位跃变势垒或表面势垒，专门适用于光发射的器件入H01L27/15；半导体激光器入H01S5/00）
H01L33/36	.以电极为特征的