公开(公告)号：US08920677B2

公开(公告)日：2014-12-30

申请号：US13703713

申请日：2011-06-17

申请人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

发明人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

IPC分类号： C09K11/54 ,  G01T1/20 ,  G01T1/202 ,  G01T1/161 ,  G01T1/00 ,  C09K11/55 ,  C09K11/62 ,  C30B7/10 ,  C30B29/16 ,  G21K4/00

CPC分类号： G01T1/2023 ,  C09K11/54 ,  C09K11/55 ,  C09K11/623 ,  C30B7/10 ,  C30B29/16 ,  G01T1/003 ,  G01T1/202 ,  G21K4/00 ,  G21K2004/06

摘要： A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a −C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

摘要翻译： 闪烁体材料由生长在包含C面作为主面的氧化锌的板状晶种的+ C面或-C面的生长的氧化锌单晶构成。 氧化锌单晶含有In和Li。 响应于入射辐射，闪烁体材料发射小于20ps荧光寿命的荧光。

公开(公告)号：US08785921B2

公开(公告)日：2014-07-22

申请号：US12989732

申请日：2009-04-28

申请人： Shigehiro Ueno ,  Keisuke Hashimoto ,  Masato Okada ,  Seiji Take ,  Yosuke Taguchi ,  Masataka Kano ,  Shin-ya Fujimoto

发明人： Shigehiro Ueno ,  Keisuke Hashimoto ,  Masato Okada ,  Seiji Take ,  Yosuke Taguchi ,  Masataka Kano ,  Shin-ya Fujimoto

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L51/50

CPC分类号： H01L51/5056 ,  C09D11/52 ,  H01L51/0035 ,  H01L51/0039 ,  H01L51/0059 ,  H01L51/5088 ,  H01L51/5234 ,  H01L2251/5369 ,  H05B33/10 ,  Y02E10/549 ,  Y02P70/521

摘要： A device capable of having an easy production process and achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer has a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.

摘要翻译： 一种能够容易地生产并实现长寿命的装置。 该器件具有衬底，设置在衬底上彼此面对的两个或多个电极，以及设置在两个或更多个电极中的两个电极之间的空穴注入传输层。 空穴注入输送层具有至少含有过渡金属氧化物，过渡金属和保护剂的过渡金属化合物或至少含有过渡金属氧化物的过渡金属化合物的含过渡金属的纳米粒子， 代理商

公开(公告)号：US07354647B2

公开(公告)日：2008-04-08

申请号：US10803539

申请日：2004-03-18

申请人： Masataka Kano

发明人： Masataka Kano

IPC分类号： B32B9/00 ,  H01L51/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  Y10T428/31504

摘要： There are provided an organic bistable element, which is simple in structure, can eliminate the need to increase production process steps, and has a low switching voltage, a memory device using the same, and a method for driving the organic bistable element and the memory device. The organic bistable element has a laminate structure comprising an organic thin film interposed between a first electrode and a second electrode. The organic thin film comprises an organic compound represented by formula (I):

摘要翻译： 提供了一种结构简单的有机双稳态元件，可以消除增加生产工艺步骤的需要，并且具有低开关电压，使用其的存储器件和用于驱动有机双稳态元件和存储器的方法 设备。 有机双稳态元件具有层压结构，其包括置于第一电极和第二电极之间的有机薄膜。 有机薄膜包含由式（I）表示的有机化合物：

公开(公告)号：US08778233B2

公开(公告)日：2014-07-15

申请号：US13459700

申请日：2012-04-30

申请人： Shigehiro Ueno ,  Keisuke Hashimoto ,  Masato Okada ,  Seiji Take ,  Yosuke Taguchi ,  Masataka Kano ,  Shin-ya Fujimoto

发明人： Shigehiro Ueno ,  Keisuke Hashimoto ,  Masato Okada ,  Seiji Take ,  Yosuke Taguchi ,  Masataka Kano ,  Shin-ya Fujimoto

IPC分类号： H01B1/12

CPC分类号： H01L51/5056 ,  C09D11/52 ,  H01L51/0035 ,  H01L51/0039 ,  H01L51/0059 ,  H01L51/5088 ,  H01L51/5234 ,  H01L2251/5369 ,  H05B33/10 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer comprises a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.

摘要翻译： 本发明是提供一种能够容易地制造和实现长寿命的装置。 一种装置，其特征在于，包括基板，两个或多个彼此面对的电极，设置在所述基板上，以及空穴注入传输层，设置在所述两个或更多个电极之间的两个电极之间，其中所述空穴注入传输层包含含过渡金属的纳米颗粒， 至少包含过渡金属氧化物，过渡金属和保护剂的过渡金属化合物，或至少包含过渡金属氧化物的过渡金属化合物和保护剂。

公开(公告)号：US07075105B2

公开(公告)日：2006-07-11

申请号：US10803456

申请日：2004-03-18

申请人： Masataka Kano

发明人： Masataka Kano

IPC分类号： H01L35/24

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/22

摘要： There are provided an organic bistable element, which is simple in structure, can eliminate the need to increase production process steps, and has a low switching voltage, a memory device using the same, and a method for driving the organic bistable element and the memory device. The organic bistable element having a laminate structure comprises a laminate interposed between a first electrode and a second electrode, the laminate comprising two or more layers of organic thin film which are each dielectric and are different from each other in electrical conductivity. The two or more layers of organic thin film have been stacked on top of each other through an electrically conductive thin film.

摘要翻译： 提供了一种结构简单的有机双稳态元件，可以消除增加生产工艺步骤的需要，并且具有低开关电压，使用其的存储器件和用于驱动有机双稳态元件和存储器的方法 设备。 具有层叠结构的有机双稳态元件包括插入在第一电极和第二电极之间的层压体，该层压体包含两层或更多层有机薄膜，每层有机薄膜均为电介质并且在导电性上彼此不同。 两层以上有机薄膜通过导电性薄膜层叠在一起。

公开(公告)号：US20130087739A1

公开(公告)日：2013-04-11

申请号：US13703713

申请日：2011-06-17

申请人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

发明人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

IPC分类号： G01T1/202

CPC分类号： G01T1/2023 ,  C09K11/54 ,  C09K11/55 ,  C09K11/623 ,  C30B7/10 ,  C30B29/16 ,  G01T1/003 ,  G01T1/202 ,  G21K4/00 ,  G21K2004/06

摘要： A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a −C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

摘要翻译： 闪烁体材料由生长在包含C面作为主面的氧化锌的板状晶种的+ C面或-C面的生长的氧化锌单晶构成。 氧化锌单晶含有In和Li。 响应于入射辐射，闪烁体材料发射小于20ps荧光寿命的荧光。

公开(公告)号：US08877551B2

公开(公告)日：2014-11-04

申请号：US13619075

申请日：2012-09-14

申请人： Bo-Sung Kim ,  Jun-Ho Song ,  Doo-Na Kim ,  Kang-Moon Jo ,  Tae-Young Choi ,  Masataka Kano ,  Yeon-Taek Jeong

发明人： Bo-Sung Kim ,  Jun-Ho Song ,  Doo-Na Kim ,  Kang-Moon Jo ,  Tae-Young Choi ,  Masataka Kano ,  Yeon-Taek Jeong

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

摘要： In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

摘要翻译： 在制造薄膜晶体管的方法中，在具有栅电极的基底基板的快速表面上，在基底基板的第一表面，氧化物半导体层，绝缘层和光致抗蚀剂层上形成栅电极。 使用第一光致抗蚀剂图案对绝缘层和氧化物半导体层进行构图，以形成蚀刻停止层和活性图案。 源极和漏极形成在具有有源图案的基底基板上，并且蚀刻停止器，源极电极和漏电极与蚀刻停止器的两端重叠并且彼此间隔开。 因此，当形成活性图案和蚀刻停止物时，可以通过省略掩模来降低制造成本。

公开(公告)号：US20130234169A1

公开(公告)日：2013-09-12

申请号：US13619075

申请日：2012-09-14

申请人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

发明人： Bo-Sung KIM ,  Jun-Ho SONG ,  Doo-Na KIM ,  Kang-Moon JO ,  Tae-Young CHOI ,  Masataka KANO ,  Yeon-Taek JEONG

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

摘要： In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

摘要翻译： 在制造薄膜晶体管的方法中，在具有栅电极的基底基板的快速表面上，在基底基板的第一表面，氧化物半导体层，绝缘层和光致抗蚀剂层上形成栅电极。 使用第一光致抗蚀剂图案对绝缘层和氧化物半导体层进行构图，以形成蚀刻停止层和活性图案。 源极和漏极形成在具有有源图案的基底基板上，并且蚀刻停止器，源极电极和漏电极与蚀刻停止器的两端重叠并且彼此间隔开。 因此，当形成活性图案和蚀刻停止物时，可以通过省略掩模来降低制造成本。

公开(公告)号：US20120211705A1

公开(公告)日：2012-08-23

申请号：US13459700

申请日：2012-04-30

申请人： Shigehiro UENO ,  Keisuke HASHIMOTO ,  Masato OKADA ,  Seiji TAKE ,  Yosuke TAGUCHI ,  Masataka KANO ,  Shin-ya FUJIMOTO

发明人： Shigehiro UENO ,  Keisuke HASHIMOTO ,  Masato OKADA ,  Seiji TAKE ,  Yosuke TAGUCHI ,  Masataka KANO ,  Shin-ya FUJIMOTO

IPC分类号： H01B1/22 ,  H01B1/12 ,  B82Y99/00

CPC分类号： H01L51/5056 ,  C09D11/52 ,  H01L51/0035 ,  H01L51/0039 ,  H01L51/0059 ,  H01L51/5088 ,  H01L51/5234 ,  H01L2251/5369 ,  H05B33/10 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer comprises a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent.

摘要翻译： 本发明是提供一种能够容易地制造和实现长寿命的装置。 一种装置，其特征在于，包括基板，两个或多个彼此面对的电极，设置在所述基板上，以及空穴注入传输层，设置在所述两个或更多个电极之间的两个电极之间，其中所述空穴注入传输层包含含过渡金属的纳米颗粒， 至少包含过渡金属氧化物，过渡金属和保护剂的过渡金属化合物，或至少包含过渡金属氧化物的过渡金属化合物和保护剂。

公开(公告)号：US20110244639A1

公开(公告)日：2011-10-06

申请号：US13071715

申请日：2011-03-25

申请人： Kenichi OGAWA ,  Tomomi SUZUKI ,  Masataka KANO

发明人： Kenichi OGAWA ,  Tomomi SUZUKI ,  Masataka KANO

IPC分类号： H01L21/336 ,  G03F7/20 ,  B05D5/00

CPC分类号： G03F7/2024 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/3105 ,  H01L29/66484 ,  H01L29/7831

摘要： A main object of the present invention is to disclose a manufacturing method of the pattern formed body capable of attaining patterning efficiently with a high precision. To attain the object, the present invention provides a method comprising: a photoresist pattern formation step of forming a photoresist pattern on a hydrophobic layer formed on a substrate and having a surface exhibiting hydrophobicity; a hydrophilicity imparting step of radiating an energy onto the surface of the hydrophobic layer on which the photoresist pattern is formed, thereby making the surface hydrophilic to form hydrophilic areas; and a photoresist pattern peeling step of peeling the photoresist pattern and forming a hydrophilic/hydrophobic pattern on the hydrophobic layer surface, in which the hydrophilic area and hydrophobic area covered previously with the photoresist pattern in the hydrophilicity imparting step are formed in a pattern form.

摘要翻译： 本发明的主要目的是公开一种能够以高精度有效地进行图案化的图案形成体的制造方法。 为了实现该目的，本发明提供了一种方法，包括：光致抗蚀剂图案形成步骤，在形成在基底上并具有疏水性的表面的疏水层上形成光致抗蚀剂图案; 向能够形成光致抗蚀剂图案的疏水层的表面照射能量的亲水赋予工序，使表面亲水化，形成亲水性区域; 以及光致抗蚀剂图案剥离步骤，其在疏水层表面上剥离光致抗蚀剂图案并形成亲水/疏水图案，其中在亲水性赋予步骤中先前用光致抗蚀剂图案覆盖的亲水区域和疏水区域以图案形式形成。