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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110278592A1

    公开(公告)日：2011-11-17

    申请号：US13087118

    申请日：2011-04-14

    申请人： Nobuo TSUBOI ,  Masakazu OKADA

    发明人： Nobuo TSUBOI ,  Masakazu OKADA

    IPC分类号： H01L29/12 ,  H01L29/772 ,  H01L29/06

    CPC分类号： H01L29/0696 ,  H01L27/0207 ,  H01L27/11807

    摘要： A semiconductor device which is designed based on RDR, suppresses the occurrence of a trouble at the boundary between an active region and a power wire and therearound and is small in size and highly integrated. The semiconductor device includes a first conductive impurity region for functional elements which is formed over the main surface of a semiconductor substrate and a second conductive impurity region for power potential to which power potential is applied in at least one standard cell. It also includes insulating layers which are formed over the main surface of the semiconductor substrate and have throughholes reaching the main surface of the semiconductor substrate, and a conductive layer for contact formed in the throughholes of the insulating layers. The impurity region for functional elements and the impurity region for power potential are electrically coupled to each other through the conductive layer for contact which is formed astride the impurity region for functional elements and the impurity region for power potential.

    摘要翻译： 基于RDR设计的半导体器件抑制在活性区域和电源线之间的边界处的麻烦的发生，并且尺寸小并且高度集成。 半导体器件包括形成在半导体衬底的主表面上的功能元件的第一导电杂质区域和用于在至少一个标准单元中施加功率电位的功率电位的第二导电杂质区域。 它还包括形成在半导体衬底的主表面上并具有到达半导体衬底的主表面的通孔和形成在绝缘层的通孔中的用于接触的导电层的绝缘层。 用于功能元件的杂质区域和功率电位的杂质区域通过形成跨越功能元件的杂质区域和功率电位的杂质区域的接触用导电层彼此电耦合。

    Thin film transistor and method of manufacturing thin film and thin film transistor
    3.
    发明申请
    Thin film transistor and method of manufacturing thin film and thin film transistor 审中-公开
    薄膜晶体管及制造薄膜和薄膜晶体管的方法

    公开(公告)号：US20080054358A1

    公开(公告)日：2008-03-06

    申请号：US11894826

    申请日：2007-08-22

    申请人： Masakazu OKADA ,  Yuya HIRAO

    发明人： Masakazu OKADA ,  Yuya HIRAO

    IPC分类号： H01L29/786 ,  H01L21/31 ,  H01L21/3205

    CPC分类号： H01L21/31608 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02274 ,  H01L27/124 ,  H01L27/1292 ,  H01L51/0525 ,  H01L51/0545

    摘要： A method of manufacturing a thin film including the steps of: providing a film manufacturing apparatus including a first discharge electrode, a second discharge electrode placed opposed to the first discharge electrode and a high frequency power source, which supplies high frequency power between the first discharge electrode and a second discharge electrode; placing a substrate on which a conductive line pattern has been formed on the second discharge electrode; applying the high frequency power from the high frequency power supply while generating plasma by using discharged gas under an atmospheric pressure or a near-atmospheric pressure; and forming a thin film on the substrate, wherein a space ratio (W/L) of a line width W (W>0) of the conductive line pattern to a spatial distance L between the first discharge electrode and the substrate is set not more than 0.1.

    摘要翻译： 一种制造薄膜的方法，包括以下步骤：提供一种膜制造装置，其包括第一放电电极，与第一放电电极相对设置的第二放电电极和高频电源，其在第一放电 电极和第二放电电极; 在第二放电电极上放置已经形成导电线图案的基板; 通过在大气压或接近大气压下使用排放气体来产生等离子体，从高频电源施加高频功率; 以及在所述基板上形成薄膜，其中，所述导线图案的线宽W（W> 0）与所述第一放电电极和所述基板之间的空间距离L的空间比（W / L）不被设定 比0.1。

    Liquid crystal device having spacers and manufacturing method thereof
    6.
    发明授权
    Liquid crystal device having spacers and manufacturing method thereof 有权
    具有间隔物的液晶装置及其制造方法

    公开(公告)号：US06226067B1

    公开(公告)日：2001-05-01

    申请号：US09163846

    申请日：1998-09-30

    申请人： Kenji Nishiguchi ,  Masakazu Okada ,  Kiyofumi Hashimoto

    发明人： Kenji Nishiguchi ,  Masakazu Okada ,  Kiyofumi Hashimoto

    IPC分类号： G02F11339

    CPC分类号： G02F1/13394 ,  G02F1/13392

    摘要： Disclosed is a liquid crystal light modulating element comprising a pair of substrates and a liquid crystal modulating layer interposed between the substrates. The liquid crystal modulating layer mainly comprises (1) a liquid crystal material for light modulation, (2) a plurality of spacers for maintaining a gap between the substrates, and (3) a plurality of resin structural nodules for supporting and adhering said pair of substrates. The resin structural nodules are arranged within a light modulating region based on a predetermined principle or a predetermined pattern.

    摘要翻译： 公开了一种液晶光调制元件，其包括一对基板和插入在基板之间的液晶转换层。 液晶转换层主要包括（1）用于光调制的液晶材料，（2）多个用于保持基板之间的间隙的间隔物，（3）多个树脂结构结块，用于支撑和粘附所述一对 底物。 基于预定原理或预定图案将树脂结构结节布置在光调制区域内。

    Insertion and removal of a circuit device into a bus network
    7.
    发明授权
    Insertion and removal of a circuit device into a bus network 失效
    将电路设备插入和拆卸到总线网络中

    公开(公告)号：US5247619A

    公开(公告)日：1993-09-21

    申请号：US375826

    申请日：1989-07-05

    申请人： Yasushi Mutoh ,  Masakazu Okada ,  Shozi Yamaguchi ,  Kunio Suzuki

    发明人： Yasushi Mutoh ,  Masakazu Okada ,  Shozi Yamaguchi ,  Kunio Suzuki

    IPC分类号： G06F1/18 ,  G06F3/00 ,  G06F13/40

    CPC分类号： G06F13/4081

    摘要： A circuit device (e.g. mounted on a printed circuit board) is connected to a data network, to which network are also connected a plurality of other circuit devices under power. On removal of such a circuit device, the output driver connecting the circuit components of the output device to the communications bus of the bus network is first disconnected from power, and only when its disconnection is stable is the device withdrawn. A control device of the circuit device is connected to the control bus of the data network, and before power is disconnected from the output driver, the control device signals to the network so as to prevent other circuit devices connected to the network from signalling on the network. Effectively, the circuit device to be removed "occupies" the bus. This occupation is maintained until the disconnection of the output driver is stable, and then the circuit device can be removed from the network. Similarly, on insertion, the network is first occupied before power is connected to the output driver. In this way, it becomes possible to prevent faults due to missignalling between the other circuit devices connected to the network when one circuit device is inserted or removed.

    Loop data transmission control method and system
    8.
    发明授权
    Loop data transmission control method and system 失效
    环路数据传输控制方法和系统

    公开(公告)号：US4432054A

    公开(公告)日：1984-02-14

    申请号：US297405

    申请日：1981-08-28

    申请人： Masakazu Okada ,  Hitoshi Fushimi ,  Seiichi Yasumoto ,  Takuji Hamada

    发明人： Masakazu Okada ,  Hitoshi Fushimi ,  Seiichi Yasumoto ,  Takuji Hamada

    IPC分类号： H04L1/22 ,  G06F13/00 ,  G06F13/374 ,  G06F15/173 ,  H04L12/437 ,  H04Q9/00 ,  G06F3/04

    CPC分类号： G06F15/17337 ,  G06F13/374 ,  H04L12/437

    摘要： A duplex transmission control system having active and inactive systems for totally controlling a looped transmission line on which computers and terminal devices are connected through respective stations. Each transmission control unit is operable to transmit and receive specific data related to the priority level specified for each unit. Each transmission control unit suspends the transmission of the clock for a certain period in response to the detection of the clock suspension, then transmits the specific priority data. When a transmission control unit detects its own transmitted signal, it is designated as the active system when another transmission control unit receives the signal defining the active system, it is designated as the inactive system.

    摘要翻译： 一种具有主动和非活动系统的双工传输控制系统，用于完全控制通过各个站连接计算机和终端设备的环路传输线。 每个传输控制单元可操作以发送和接收与针对每个单元指定的优先级相关的特定数据。 响应于时钟暂停的检测，每个发送控制单元暂停一段时间的发送，然后发送特定的优先级数据。 当发送控制单元检测到自己的发送信号时，当另一个发送控制单元接收到定义有源系统的信号时，将其指定为活动系统，将其指定为非活动系统。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
    半导体器件及其制造方法

    公开(公告)号：US20110001246A1

    公开(公告)日：2011-01-06

    申请号：US12883031

    申请日：2010-09-15

    申请人： Takeshi FURUSAWA ,  Takao Kamoshima ,  Masatsugu Amishiro ,  Naohito Suzumura ,  Shoichi Fukui ,  Masakazu Okada

    发明人： Takeshi FURUSAWA ,  Takao Kamoshima ,  Masatsugu Amishiro ,  Naohito Suzumura ,  Shoichi Fukui ,  Masakazu Okada

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76832 ,  H01L21/76834 ,  H01L21/76883

    摘要： The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.

    摘要翻译： 提高了在最低层布线中具有嵌入线的半导体器件的可靠性。 在半导体衬底的主表面中，形成MISFET，并且在主表面上形成绝缘膜10,11。 在绝缘膜10,11中形成有接触孔，并且插入插头。 在插入插头的绝缘膜11上形成绝缘膜14,15,16，并且在绝缘膜14,15,16中形成开口，并且在其中嵌入线。 绝缘膜15是在蚀刻绝缘膜16以形成包含硅和碳的开口时的蚀刻停止膜。 绝缘膜11具有高的吸湿性，绝缘膜15具有低的耐湿性，然而，通过在其间插入绝缘膜14，使得绝缘膜14具有比Si（硅）原子数更高的Si（硅）原子数 绝缘膜11，电阻弱的界面被防止形成。