公开(公告)号：US20100295614A1

公开(公告)日：2010-11-25

申请号：US12445836

申请日：2007-10-29

申请人： Noriyuki Fujita ,  Shigeo Masai ,  Masaharu Sato

发明人： Noriyuki Fujita ,  Shigeo Masai ,  Masaharu Sato

IPC分类号： H03F1/52

CPC分类号： H03F1/52 ,  H03F1/56 ,  H03F3/45475 ,  H03F2203/45136 ,  H03F2203/45576

摘要： An amplifying device for setting input impedance at several GΩ to several tens of GΩ and improving an ESD withstand current rating is provided.An ECM is connected to an input terminal 21 and frequency characteristics become flat to a voice band by high input impedance of a CMOS amplifier 20 and the input impedance is set at several GΩ to several tens of GΩ and thereby, response time after detecting a loud voice or turning on a power source of the ECM is speeded up and desired electrical characteristics are achieved. A path for releasing a surge voltage which occurs during assembly in the outside of an IC and intrudes from the input terminal 21 to a power source terminal or an earth terminal without an influence on a signal (20 Hz to 20 kHz) of a voice band entering from the input terminal 21 can be constructed by connecting a P-channel MOS transistor 27 and an N-channel MOS transistor 28 as an ESD protective element.

摘要翻译： 用于设置几个G＆OHgr的输入阻抗的放大装置; 到几十G＆OHgr; 并提供了ESD耐受额定电流。 ECM连接到输入端子21，并且频率特性通过CMOS放大器20的高输入阻抗而变得平坦到语音频带，并且输入阻抗被设置为几个G＆OHgr; 到几十G＆OHgr; 因此，检测到大声音或者打开ECM的电源之后的响应时间被加速并达到期望的电特性。 用于释放在IC外部组装期间发生的浪涌电压的路径，并且从输入端子21入射到电源端子或接地端子，而不影响声频带的信号（20Hz至20kHz） 可以通过连接作为ESD保护元件的P沟道MOS晶体管27和N沟道MOS晶体管28构成从输入端子21进入。

公开(公告)号：US20080024946A1

公开(公告)日：2008-01-31

申请号：US11781009

申请日：2007-07-20

申请人： Masaharu SATO

发明人： Masaharu SATO

IPC分类号： H02H9/04 ,  H01L27/04

CPC分类号： H01L27/0251 ,  H01L27/0623

摘要： An electrostatic protective circuit includes a bipolar transistor, a bipolar transistor and an FET. The bipolar transistors and are coupled in series between a signal line and the ground (GND). The FET is configured that a source and a bulk thereof are coupled to a node N situated between the bipolar transistors, a gate is coupled to the signal line, and a drain is coupled to the power supply.

摘要翻译： 静电保护电路包括双极晶体管，双极晶体管和FET。 双极晶体管并串联在信号线和地（GND）之间。 FET被配置为源极和源极耦合到位于双极晶体管之间的节点N，栅极耦合到信号线，漏极耦合到电源。

公开(公告)号：US20080023797A1

公开(公告)日：2008-01-31

申请号：US11782726

申请日：2007-07-25

申请人： Masaharu SATO

发明人： Masaharu SATO

IPC分类号： H01L29/861 ,  H01L21/20 ,  H01L21/331

CPC分类号： H01L29/7322 ,  H01L21/26506 ,  H01L29/66272 ,  H01L29/861

摘要： In conventional processes, a recombination rate of minority carrier accumulated between a diffusion layer of an anode and a diffusion layer of a cathode cannot be enhanced. An interlayer insulating film 20 is formed on a semiconductor substrate 10. An opening 22 (first opening), an opening 24 (second opening) and an opening 26 are formed in the interlayer insulating film 20. The opening 22 and the opening 26 are formed above respective the p-type diffusion layer 16 and the n-type diffusion layer 18. The opening 24 is formed above the gap region that is a region between the p-type diffusion layer 16 and the n-type diffusion layer 18. A contact plug 32, a contact plug 34 and a contact plug 36 are embedded in the opening 22, the opening 24 and the opening 26 respectively. Both regions of the semiconductor substrate 10 located under the opening 22 among and located under the opening 24 are doped with an impurity.

摘要翻译： 在常规方法中，不能增加在阳极的扩散层和阴极的扩散层之间积聚的少数载流子的复合速率。 层间绝缘膜20形成在半导体基板10上。在层间绝缘膜20中形成开口22（第一开口），开口24（第二开口）和开口26.开口22和开口26形成 在p型扩散层16和n型扩散层18之上。开口24形成在作为p型扩散层16和n型扩散层18之间的区域的间隙区域的上方。 插头32，接触塞34和接触塞36分别嵌入开口22，开口24和开口26中。 位于开口22之下且位于开口24下方的半导体基板10的两个区域掺杂有杂质。

公开(公告)号：US20070034991A1

公开(公告)日：2007-02-15

申请号：US11499642

申请日：2006-08-07

申请人： Masaharu Sato

发明人： Masaharu Sato

IPC分类号： H01L29/00

CPC分类号： H01L27/0629 ,  H01L27/0814

摘要： To reduce the ratio of the area of a diode region relative to the chip area. A semiconductor device comprises an insulated gate transistor formed on a substrate 1, a plurality of diodes D1, D2, and D3 formed on the substrate 1 and connected in serial between the gate of the insulated gate transistor and a terminal, and a diode array that breaks down when a surge voltage from the terminal is applied. The diode array is formed on the P-type substrate 1 and the diodes D1, D2, and D3 respectively has a plurality of N-type wells 2a, 2b, and 2c, which serve as cathodes. The sizes of spaces S1 between the N-type wells 2a and 2b, and S2 between the N-type wells 2b and 2c are different.

摘要翻译： 为了减小二极管区域相对于芯片面积的面积的比率。 半导体器件包括形成在衬底1上的绝缘栅晶体管，形成在衬底1上并串联连接在绝缘栅极晶体管的栅极和端子之间的多个二极管D 1，D 2和D 3，以及 当施加来自端子的浪涌电压时，二极管阵列发生故障。 二极管阵列形成在P型衬底1上，二极管D 1，D 2和D 3分别具有多个用作阴极的N型阱2a，2b和2c。 N型阱2a和2b之间的空间S 1的大小和N型阱2b和2c之间的S 2是不同的。

公开(公告)号：US5085459A

公开(公告)日：1992-02-04

申请号：US500322

申请日：1990-03-28

申请人： Masaharu Sato ,  Naoto Fukushima ,  Yukio Fukunaga ,  Yohsuke Akatsu ,  Itaru Fujimura ,  Kensuke Fukuyama

发明人： Masaharu Sato ,  Naoto Fukushima ,  Yukio Fukunaga ,  Yohsuke Akatsu ,  Itaru Fujimura ,  Kensuke Fukuyama

IPC分类号： B60G17/015 ,  B60G17/018

CPC分类号： B60G17/018 ,  B60G2400/25 ,  B60G2500/02

摘要： A pressure supply network for an active suspension system employs a strategy for predicting consumed fluid flow rate on the basis of bounding and rebounding stroke between a vehicular body and a suspension member rotatably supporting a vehicular wheel. A discharge rate of a fluid pump disposed in the pressure supply network is controlled on the basis of the predicted fluid flow rate.

公开(公告)号：US4848790A

公开(公告)日：1989-07-18

申请号：US178066

申请日：1988-04-05

申请人： Yukio Fukunaga ,  Yoshiki Tsuda ,  Naoto Fukushima ,  Yohsuke Akatsu ,  Sunao Hano ,  Masaharu Sato

发明人： Yukio Fukunaga ,  Yoshiki Tsuda ,  Naoto Fukushima ,  Yohsuke Akatsu ,  Sunao Hano ,  Masaharu Sato

IPC分类号： B60G17/00 ,  B60G17/015 ,  B60G17/017 ,  B60G17/04 ,  B60K25/04 ,  F04B49/06

CPC分类号： B60G17/017 ,  F04B49/065 ,  B60G2500/02

摘要： A hydraulic pressure supply system includes a discharge rate variable fluid pump. The discharge rate of the fluid pump is controlled to vary depending upon the vehicle driving condition. In the control of the discharge rate of the fluid pump, greater discharge rate is ordered while the vehicle is running, than that during vehicle stopping condition.

公开(公告)号：US4571480A

公开(公告)日：1986-02-18

申请号：US583607

申请日：1984-02-27

申请人： Yoshiya Sakai ,  Yasuhiro Nagai ,  Kazuo Ikemoto ,  Tetsuo Suga ,  Masaharu Sato

发明人： Yoshiya Sakai ,  Yasuhiro Nagai ,  Kazuo Ikemoto ,  Tetsuo Suga ,  Masaharu Sato

IPC分类号： B23K35/36 ,  B23K35/368

CPC分类号： B23K35/3605 ,  B23K35/368

摘要： There are disclosed flux cored wire electrodes for self-shielded arc welding which comprise a steel sheath filled with a powdery flux containing as essential components thereof the following components set forth in terms of weight percentage: BaF.sub.2 (25-70), alkali metal fluoride (1-30), compound oxide composed of the oxide of an alkaline earth metal selected from among Ca, Sr, and Ba and the oxide of a metal selected from among Fe, Mn, Ni, Co, Ti, Al and Zr (1-30), Al (3-12), Mg (2-10) and Mn (0.5-10).

摘要翻译： 公开了用于自屏蔽电弧焊接的药芯焊丝电极，其包括填充有作为其主要成分的粉末状焊剂的钢护套，其以重量百分比表示的以下组分：BaF 2（25-70），碱金属氟化物 1-30），由选自Ca，Sr和Ba的碱土金属的氧化物和选自Fe，Mn，Ni，Co，Ti，Al和Zr（1- 30），Al（3-12），Mg（2-10）和Mn（0.5-10）。

公开(公告)号：US08461010B2

公开(公告)日：2013-06-11

申请号：US11782726

申请日：2007-07-25

申请人： Masaharu Sato

发明人： Masaharu Sato

IPC分类号： H01L29/861 ,  H01L21/20 ,  H01L21/331

CPC分类号： H01L29/7322 ,  H01L21/26506 ,  H01L29/66272 ,  H01L29/861

摘要： In conventional processes, a recombination rate of minority carrier accumulated between a diffusion layer of an anode and a diffusion layer of a cathode cannot be enhanced. An interlayer insulating film 20 is formed on a semiconductor substrate 10. An opening 22 (first opening), an opening 24 (second opening) and an opening 26 are formed in the interlayer insulating film 20. The opening 22 and the opening 26 are formed above respective the p-type diffusion layer 16 and the n-type diffusion layer 18. The opening 24 is formed above the gap region that is a region between the p-type diffusion layer 16 and the n-type diffusion layer 18. A contact plug 32, a contact plug 34 and a contact plug 36 are embedded in the opening 22, the opening 24 and the opening 26 respectively. Both regions of the semiconductor substrate 10 located under the opening 22 among and located under the opening 24 are doped with an impurity.

摘要翻译： 在常规方法中，不能增加在阳极的扩散层和阴极的扩散层之间积聚的少数载流子的复合速率。 层间绝缘膜20形成在半导体基板10上。在层间绝缘膜20中形成开口22（第一开口），开口24（第二开口）和开口26.开口22和开口26形成 在p型扩散层16和n型扩散层18之上。开口24形成在作为p型扩散层16和n型扩散层18之间的区域的间隙区域的上方。 插头32，接触塞34和接触塞36分别嵌入开口22，开口24和开口26中。 位于开口22之下且位于开口24下方的半导体基板10的两个区域掺杂有杂质。

公开(公告)号：US20120107696A1

公开(公告)日：2012-05-03

申请号：US13337881

申请日：2011-12-27

申请人： Masaharu Sato ,  Satoshi Shigematsu ,  Koichi Watanabe ,  Yozo Miura ,  Takuya Koizumi

发明人： Masaharu Sato ,  Satoshi Shigematsu ,  Koichi Watanabe ,  Yozo Miura ,  Takuya Koizumi

IPC分类号： H01M4/60 ,  H01M10/056 ,  H01M10/02

CPC分类号： H01M10/0569 ,  H01M2/0222 ,  H01M4/608 ,  H01M10/052

摘要： An electrode active material mainly includes an organic compound having, in a structural unit thereof, a conjugated diamine structure represented by the general formula (I), and an electrolyte includes a carbonate ester compound represented by the general formula (II). In the formulae, R1 to R4 represent substituted or unsubstituted alkyl groups, or the like, whereas X1 to X4 represent a hydrogen atom or a substituent. A secondary battery is achieved which has a high energy density and thus produces a high output, and has favorable cycle characteristics with a small capacity degradation even in the case of repeating charge and discharge.

摘要翻译： 电极活性物质主要包括在其结构单元中具有由通式（I）表示的共轭二胺结构的有机化合物，电解质包括由通式（II）表示的碳酸酯化合物。 式中，R 1〜R 4表示取代或未取代的烷基等，X 1〜X 4表示氢原子或取代基。 实现了具有高能量密度并因此产生高输出的二次电池，并且具有良好的循环特性，即使在重复充电和放电的情况下也具有小的容量降低。

公开(公告)号：US20110195297A1

公开(公告)日：2011-08-11

申请号：US13020213

申请日：2011-02-03

申请人： NAO OUCHI ,  Masaharu Sato

发明人： NAO OUCHI ,  Masaharu Sato

IPC分类号： H01M4/60 ,  H01M10/02

CPC分类号： H01M4/60 ,  H01M4/137 ,  H01M4/602 ,  H01M4/62 ,  H01M4/624 ,  H01M4/64 ,  H01M10/05 ,  Y02E60/122 ,  Y02P70/54

摘要： A secondary battery that includes a sheet-like member containing at least an electrode active material and an electrolyte; and first and second conductive layers containing at least a conductive aid and which are positioned on the opposed principal surfaces of the sheet-like member. The electrode active material contains an organic compound (for example, an organic compound having a stable radical) which participates in both oxidation and reduction reactions such that the positive electrode active material and negative electrode active material are formed from the same organic compound. In addition, the sheet-like member includes at least a polymer compound, and the organic compound contains at least one of a nitroxyl radical, a verdazyl radical, and a nitronyl nitroxyl radical.

摘要翻译： 一种二次电池，包括至少包含电极活性材料和电解质的片状构件; 以及第一和第二导电层，其至少包含导电助剂并且位于片状构件的相对主表面上。 电极活性物质含有参与氧化还原反应的有机化合物（例如具有稳定自由基的有机化合物），使得正极活性物质和负极活性物质由相同的有机化合物形成。 此外，片状构件至少包括高分子化合物，并且有机化合物包含硝酰基，维吾尔基和硝基硝基氧基中的至少一种。