公开(公告)号：US20100295614A1

公开(公告)日：2010-11-25

申请号：US12445836

申请日：2007-10-29

申请人： Noriyuki Fujita ,  Shigeo Masai ,  Masaharu Sato

发明人： Noriyuki Fujita ,  Shigeo Masai ,  Masaharu Sato

IPC分类号： H03F1/52

CPC分类号： H03F1/52 ,  H03F1/56 ,  H03F3/45475 ,  H03F2203/45136 ,  H03F2203/45576

摘要： An amplifying device for setting input impedance at several GΩ to several tens of GΩ and improving an ESD withstand current rating is provided.An ECM is connected to an input terminal 21 and frequency characteristics become flat to a voice band by high input impedance of a CMOS amplifier 20 and the input impedance is set at several GΩ to several tens of GΩ and thereby, response time after detecting a loud voice or turning on a power source of the ECM is speeded up and desired electrical characteristics are achieved. A path for releasing a surge voltage which occurs during assembly in the outside of an IC and intrudes from the input terminal 21 to a power source terminal or an earth terminal without an influence on a signal (20 Hz to 20 kHz) of a voice band entering from the input terminal 21 can be constructed by connecting a P-channel MOS transistor 27 and an N-channel MOS transistor 28 as an ESD protective element.

摘要翻译： 用于设置几个G＆OHgr的输入阻抗的放大装置; 到几十G＆OHgr; 并提供了ESD耐受额定电流。 ECM连接到输入端子21，并且频率特性通过CMOS放大器20的高输入阻抗而变得平坦到语音频带，并且输入阻抗被设置为几个G＆OHgr; 到几十G＆OHgr; 因此，检测到大声音或者打开ECM的电源之后的响应时间被加速并达到期望的电特性。 用于释放在IC外部组装期间发生的浪涌电压的路径，并且从输入端子21入射到电源端子或接地端子，而不影响声频带的信号（20Hz至20kHz） 可以通过连接作为ESD保护元件的P沟道MOS晶体管27和N沟道MOS晶体管28构成从输入端子21进入。

公开(公告)号：US20070034991A1

公开(公告)日：2007-02-15

申请号：US11499642

申请日：2006-08-07

申请人： Masaharu Sato

发明人： Masaharu Sato

IPC分类号： H01L29/00

CPC分类号： H01L27/0629 ,  H01L27/0814

摘要： To reduce the ratio of the area of a diode region relative to the chip area. A semiconductor device comprises an insulated gate transistor formed on a substrate 1, a plurality of diodes D1, D2, and D3 formed on the substrate 1 and connected in serial between the gate of the insulated gate transistor and a terminal, and a diode array that breaks down when a surge voltage from the terminal is applied. The diode array is formed on the P-type substrate 1 and the diodes D1, D2, and D3 respectively has a plurality of N-type wells 2a, 2b, and 2c, which serve as cathodes. The sizes of spaces S1 between the N-type wells 2a and 2b, and S2 between the N-type wells 2b and 2c are different.

摘要翻译： 为了减小二极管区域相对于芯片面积的面积的比率。 半导体器件包括形成在衬底1上的绝缘栅晶体管，形成在衬底1上并串联连接在绝缘栅极晶体管的栅极和端子之间的多个二极管D 1，D 2和D 3，以及 当施加来自端子的浪涌电压时，二极管阵列发生故障。 二极管阵列形成在P型衬底1上，二极管D 1，D 2和D 3分别具有多个用作阴极的N型阱2a，2b和2c。 N型阱2a和2b之间的空间S 1的大小和N型阱2b和2c之间的S 2是不同的。

公开(公告)号：US5085459A

公开(公告)日：1992-02-04

申请号：US500322

申请日：1990-03-28

申请人： Masaharu Sato ,  Naoto Fukushima ,  Yukio Fukunaga ,  Yohsuke Akatsu ,  Itaru Fujimura ,  Kensuke Fukuyama

发明人： Masaharu Sato ,  Naoto Fukushima ,  Yukio Fukunaga ,  Yohsuke Akatsu ,  Itaru Fujimura ,  Kensuke Fukuyama

IPC分类号： B60G17/015 ,  B60G17/018

CPC分类号： B60G17/018 ,  B60G2400/25 ,  B60G2500/02

摘要： A pressure supply network for an active suspension system employs a strategy for predicting consumed fluid flow rate on the basis of bounding and rebounding stroke between a vehicular body and a suspension member rotatably supporting a vehicular wheel. A discharge rate of a fluid pump disposed in the pressure supply network is controlled on the basis of the predicted fluid flow rate.

公开(公告)号：US4848790A

公开(公告)日：1989-07-18

申请号：US178066

申请日：1988-04-05

申请人： Yukio Fukunaga ,  Yoshiki Tsuda ,  Naoto Fukushima ,  Yohsuke Akatsu ,  Sunao Hano ,  Masaharu Sato

发明人： Yukio Fukunaga ,  Yoshiki Tsuda ,  Naoto Fukushima ,  Yohsuke Akatsu ,  Sunao Hano ,  Masaharu Sato

IPC分类号： B60G17/00 ,  B60G17/015 ,  B60G17/017 ,  B60G17/04 ,  B60K25/04 ,  F04B49/06

CPC分类号： B60G17/017 ,  F04B49/065 ,  B60G2500/02

摘要： A hydraulic pressure supply system includes a discharge rate variable fluid pump. The discharge rate of the fluid pump is controlled to vary depending upon the vehicle driving condition. In the control of the discharge rate of the fluid pump, greater discharge rate is ordered while the vehicle is running, than that during vehicle stopping condition.

公开(公告)号：US4571480A

公开(公告)日：1986-02-18

申请号：US583607

申请日：1984-02-27

申请人： Yoshiya Sakai ,  Yasuhiro Nagai ,  Kazuo Ikemoto ,  Tetsuo Suga ,  Masaharu Sato

发明人： Yoshiya Sakai ,  Yasuhiro Nagai ,  Kazuo Ikemoto ,  Tetsuo Suga ,  Masaharu Sato

IPC分类号： B23K35/36 ,  B23K35/368

CPC分类号： B23K35/3605 ,  B23K35/368

摘要： There are disclosed flux cored wire electrodes for self-shielded arc welding which comprise a steel sheath filled with a powdery flux containing as essential components thereof the following components set forth in terms of weight percentage: BaF.sub.2 (25-70), alkali metal fluoride (1-30), compound oxide composed of the oxide of an alkaline earth metal selected from among Ca, Sr, and Ba and the oxide of a metal selected from among Fe, Mn, Ni, Co, Ti, Al and Zr (1-30), Al (3-12), Mg (2-10) and Mn (0.5-10).

摘要翻译： 公开了用于自屏蔽电弧焊接的药芯焊丝电极，其包括填充有作为其主要成分的粉末状焊剂的钢护套，其以重量百分比表示的以下组分：BaF 2（25-70），碱金属氟化物 1-30），由选自Ca，Sr和Ba的碱土金属的氧化物和选自Fe，Mn，Ni，Co，Ti，Al和Zr（1- 30），Al（3-12），Mg（2-10）和Mn（0.5-10）。

公开(公告)号：US09034518B2

公开(公告)日：2015-05-19

申请号：US13020213

申请日：2011-02-03

申请人： Nao Ouchi ,  Masaharu Sato

发明人： Nao Ouchi ,  Masaharu Sato

IPC分类号： H01M4/60 ,  H01M4/64 ,  H01M4/137 ,  H01M10/05 ,  H01M4/62

CPC分类号： H01M4/60 ,  H01M4/137 ,  H01M4/602 ,  H01M4/62 ,  H01M4/624 ,  H01M4/64 ,  H01M10/05 ,  Y02E60/122 ,  Y02P70/54

摘要： A secondary battery that includes a sheet-like member containing at least an electrode active material and an electrolyte; and first and second conductive layers containing at least a conductive aid and which are positioned on the opposed principal surfaces of the sheet-like member. The electrode active material contains an organic compound (for example, an organic compound having a stable radical) which participates in both oxidation and reduction reactions such that the positive electrode active material and negative electrode active material are formed from the same organic compound. In addition, the sheet-like member includes at least a polymer compound, and the organic compound contains at least one of a nitroxyl radical, a verdazyl radical, and a nitronyl nitroxyl radical.

摘要翻译： 一种二次电池，包括至少包含电极活性材料和电解质的片状构件; 以及第一和第二导电层，其至少包含导电助剂并且位于片状构件的相对的主表面上。 电极活性物质含有参与氧化还原反应的有机化合物（例如具有稳定自由基的有机化合物），使得正极活性物质和负极活性物质由相同的有机化合物形成。 此外，片状构件至少包括高分子化合物，并且有机化合物包含硝酰基，维吾尔基和硝基硝基氧基中的至少一种。

公开(公告)号：US20140212754A1

公开(公告)日：2014-07-31

申请号：US14343029

申请日：2012-09-07

申请人： Hidehisa Mokudai ,  Toru Sukigara ,  Masaharu Sato ,  Tomoaki Onoue

发明人： Hidehisa Mokudai ,  Toru Sukigara ,  Masaharu Sato ,  Tomoaki Onoue

IPC分类号： H01M4/60 ,  H01M10/0525

CPC分类号： H01M4/60 ,  H01M10/0525 ,  H01M10/0569 ,  H01M2300/0045

摘要： Provided is a battery having a high charging/discharging capacity density as compared with a conventional one. The battery (1) is characterized by comprising a positive electrode (2), a negative electrode (3), and an electrolytic solution interposed between the positive electrode (2) and the negative electrode (3) and formed by dissolving an electrolytic solution in a solvent, wherein the positive electrode (2) includes rubeanic acid or a rubeanic acid derivative as an active material and the solvent includes an ionic liquid. In the battery (1), it is possible to neutralize, by anions present in the ions, positive charges generated when rubeanic acid or the rubeanic acid derivative is oxidized. Therefore, rubeanic acid or the rubeanic acid derivative can take three states from an oxidant to a reductant, so that a high charging/discharging capacity density can be obtained in comparison with a conventional one.

摘要翻译： 提供与常规电池相比具有高充电/放电容量密度的电池。 电池（1）的特征在于，包括正极（2），负极（3）以及介于正极（2）和负极（3）之间的电解液，通过将电解液溶解在 溶剂，其中所述正极（2）包括作为活性物质的氢硼酸或者硼酸酸衍生物，所述溶剂包括离子液体。 在电池（1）中，可以通过存在于离子中的阴离子来中和无规硼酸或者硼酸衍生物被氧化时产生的正电荷。 因此，与常规方法相比，可以从氧化剂到还原剂三种状态，可以得到高的充放电容量密度。

公开(公告)号：US07005816B2

公开(公告)日：2006-02-28

申请号：US10768701

申请日：2004-02-02

申请人： Koji Hio ,  Masaharu Sato ,  Takaaki Uno

发明人： Koji Hio ,  Masaharu Sato ,  Takaaki Uno

IPC分类号： H02P3/12 ,  B60G17/015

CPC分类号： B60G17/0165 ,  B60G13/02 ,  B60G13/14 ,  B60G17/0157 ,  B60G2202/42 ,  B60G2300/50 ,  B60G2300/60 ,  B60G2400/206 ,  B60G2400/91 ,  B60G2500/10 ,  B60G2600/02 ,  B60G2600/09 ,  B60G2800/162 ,  B60G2800/916 ,  F16F15/035

摘要： An electromagnetic suspension system for a vehicle, comprises an electromagnetic actuator interposed between a sprung mass and an unsprung mass and disposed substantially in parallel with an spring element. An electric motor is provided for driving the electromagnetic actuator. A motor controller is configured to calculate a displacement input applied to the electromagnetic actuator and to control the electric motor in a manner that the electromagnetic actuator generates an optimum damping force corresponding to the displacement input. A motor control circuit is provided for the electric motor, through which the electric motor is connected to the motor controller. Additionally, an electrical damping element is electrically connected to the motor control circuit and in parallel with the electric motor to generate a damping force in a passive manner under a dynamic braking of the electric motor in response to the displacement input to the electromagnetic actuator from the unsprung mass.

摘要翻译： 一种用于车辆的电磁悬架系统，包括插入在簧上质量块和簧下质量块之间并与弹簧元件基本平行设置的电磁致动器。 提供电动机用于驱动电磁致动器。 电动机控制器被配置为计算施加到电磁致动器的位移输入并且以电磁致动器产生对应于位移输入的最佳阻尼力来控制电动机。 为电动机设置电动机控制电路，电动机通过该电动机控制电路与电动机控制器连接。 此外，电阻尼元件电连接到电动机控制电路并与电动机并联，以在电动机的动态制动下响应从电磁致动器的输入输入而产生阻尼力 簧下质量

公开(公告)号：US06972619B2

公开(公告)日：2005-12-06

申请号：US10734369

申请日：2003-12-12

申请人： Masaharu Sato ,  Takuma Ishida ,  Taku Kobayashi

发明人： Masaharu Sato ,  Takuma Ishida ,  Taku Kobayashi

IPC分类号： H03G3/00 ,  H03F1/36

CPC分类号： H03G3/007

摘要： In order that an amplifier with a gain proportional to source voltage is obtained, the drain-source voltages of first and second P-channel MOS-FETs are zero-biased, and a voltage shifted higher by the amount of the threshold voltage of the P-channel MOS-FET on the basis of a voltage obtained by dividing the power source voltage by resistors is applied to the positive input terminal of an operational amplifier. The gate of one of the first and second MOS-FETs is connected to a circuit ground, and a negative fixed voltage with reference to the potential obtained by dividing the power source voltage by resistors is applied to the gate of the other MOS-FET. The ON resistances of the two MOS-FETs are used as the input resistor and the feedback resistor of the operational amplifier, respectively.

摘要翻译： 为了获得具有与源极电压成比例的增益的放大器，第一和第二P沟道MOS-FET的漏极 - 源极电压被零偏置，并且电压偏移到P的阈值电压的量 基于通过将电源电压除以电阻而获得的电压的通道MOS-FET被施加到运算放大器的正输入端。 第一和第二MOS-FET中的一个的栅极连接到电路地，并且参考通过用电阻分压电源电压而获得的电位的负固定电压被施加到另一MOS-FET的栅极。 两个MOS-FET的导通电阻分别用作运算放大器的输入电阻和反馈电阻。

公开(公告)号：US6151261A

公开(公告)日：2000-11-21

申请号：US99525

申请日：1998-06-18

申请人： Masaharu Sato

发明人： Masaharu Sato

IPC分类号： G11C11/416 ,  G11C7/06 ,  G11C11/419 ,  H01L27/10 ,  G11C7/02

CPC分类号： G11C11/419 ,  G11C7/067 ,  G11C2207/063

摘要： The invention provides a high speed sense amplifier of the current detection type employing NPN transistors used for a static operation type RAM which allows high integration and can suppress increase of power dissipation and deterioration in speed even in a high integration condition. Pairs of bit lines to which data of memory cells of a static type RAM are connected are connected to a pair of common data lines through MOS transistors, and the emitter terminals of a pair of bipolar transistors are connected to the data lines while the collector terminals which serve as signal output terminals of the sense amplifier are connected to a first power supply through resistors and the base terminals are connected to a second power supply. Further, a pair of resistance elements for normally supplying current to the sense amplifier therethrough are connected to the emitter terminals of the bipolar transistors.

摘要翻译： 本发明提供一种使用用于静态操作型RAM的NPN晶体管的电流检测型高速感测放大器，其允许高集成度，并且即使在高集成条件下也能够抑制功率消耗的增加和速度的劣化。 连接静态RAM的存储单元的数据的位线对通过MOS晶体管连接到一对公共数据线，并且一对双极晶体管的发射极端子连接到数据线，而集电极端子 用作读出放大器的信号输出端的电阻器通过电阻器连接到第一电源，并且基极端子连接到第二电源。 此外，用于通过其通常向读出放大器供电的一对电阻元件连接到双极晶体管的发射极端子。