公开(公告)号：US20130108833A1

公开(公告)日：2013-05-02

申请号：US13281749

申请日：2011-10-26

Applicant: Markus Brink ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Michael A. Guillorn ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

Inventor： Markus Brink ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Michael A. Guillorn ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

IPC: B32B3/00 ,  C23F1/02

CPC classification number: G03F7/094 ,  G03F7/091 ,  G03F7/40 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  Y10T428/24479

Abstract: A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.

Abstract translation: 在基板上形成硬掩模层，软掩模层和光致抗蚀剂的堆叠。 图案化光致抗蚀剂以包括至少一个开口。 该图案通过各向异性蚀刻转移到软掩模层中，其形成包含比氟更多的碳的富碳聚合物。 富含碳的聚合物可以通过使用包含比氟更多的氢的氟代烃分子产生的含氟代烃等离子体形成。 富含碳的聚合物涂覆软掩模层的侧壁，并且防止转移到软掩模中的图案的加宽。 随后去除光致抗蚀剂，并将软掩模层中的图案转移到硬掩模层中。 用富含碳的聚合物涂覆硬掩模层的侧壁以防止转移到硬掩模中的图案变宽。

公开(公告)号：US09190316B2

公开(公告)日：2015-11-17

申请号：US13281732

申请日：2011-10-26

Applicant: Markus Brink ,  Robert L. Bruce ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

Inventor： Markus Brink ,  Robert L. Bruce ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/311 ,  H01L21/321

CPC classification number: H01L23/53295 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.

Abstract translation: 在基板上形成从底部到顶部包括含氮介电层，互连层介电材料层和硬掩模层的堆叠。 通过蚀刻对硬掩模层和互连层电介质材料层进行图案化。 使用图案化的硬掩模层作为蚀刻掩模，通过使用含氟烃的等离子体穿过含氮介电层的穿透各向异性蚀刻来对含氮介电层进行图案化。 用于产生含氟烃的等离子体的氟烃气体产生富含碳的聚合物残余物，其与含氮介电层相互作用以形成挥发性化合物。 等离子体能量可以降低到低于100eV，以减少互连层介电材料层的物理暴露表面的损伤。

公开(公告)号：US20130105996A1

公开(公告)日：2013-05-02

申请号：US13281732

申请日：2011-10-26

Applicant: Markus Brink ,  Robert L. Bruce ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

Inventor： Markus Brink ,  Robert L. Bruce ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.

Abstract translation: 在基板上形成从底部到顶部包括含氮介电层，互连层介电材料层和硬掩模层的堆叠。 通过蚀刻对硬掩模层和互连层电介质材料层进行图案化。 使用图案化的硬掩模层作为蚀刻掩模，通过使用含氟烃的等离子体穿过含氮介电层的穿透各向异性蚀刻来对含氮介电层进行图案化。 用于产生含氟烃的等离子体的氟烃气体产生富含碳的聚合物残余物，其与含氮介电层相互作用以形成挥发性化合物。 等离子体能量可以降低到低于100eV，以减少互连层介电材料层的物理暴露表面的损伤。

公开(公告)号：US12102016B2

公开(公告)日：2024-09-24

申请号：US16918708

申请日：2020-07-01

Applicant: Christian Lavoie ,  Benjamin Wymore ,  Markus Brink ,  Stephen L Brown

Inventor： Christian Lavoie ,  Benjamin Wymore ,  Markus Brink ,  Stephen L Brown

IPC: H10N60/85 ,  H10N60/01

CPC classification number: H10N60/85 ,  H10N60/01

Abstract: Techniques facilitating formation of amorphous superconducting alloys for superconducting circuits are provided. A device can comprise one or more superconducting components that comprise an amorphous superconducting alloy comprising two or more elements. At least one element of the two or more elements is a superconducting element.

公开(公告)号：US08916054B2

公开(公告)日：2014-12-23

申请号：US13281749

申请日：2011-10-26

Applicant: Markus Brink ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Michael A. Guillorn ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

Inventor： Markus Brink ,  Sebastian U. Engelmann ,  Nicholas C. M. Fuller ,  Michael A. Guillorn ,  Hiroyuki Miyazoe ,  Masahiro Nakamura

IPC: B44C1/22 ,  H01L21/033 ,  H01L21/311 ,  G03F7/40 ,  G03F7/09

CPC classification number: G03F7/094 ,  G03F7/091 ,  G03F7/40 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  Y10T428/24479

Abstract: A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.

Abstract translation: 在基板上形成硬掩模层，软掩模层和光致抗蚀剂的堆叠。 图案化光致抗蚀剂以包括至少一个开口。 该图案通过各向异性蚀刻转移到软掩模层中，其形成包含比氟更多的碳的富碳聚合物。 富含碳的聚合物可以通过使用包含比氟更多的氢的氟代烃分子产生的含氟代烃等离子体形成。 富含碳的聚合物涂覆软掩模层的侧壁，并且防止转移到软掩模中的图案的加宽。 随后去除光致抗蚀剂，并将软掩模层中的图案转移到硬掩模层中。 用富含碳的聚合物涂覆硬掩模层的侧壁以防止转移到硬掩模中的图案变宽。

公开(公告)号：US20220005999A1

公开(公告)日：2022-01-06

申请号：US16918708

申请日：2020-07-01

Applicant: Christian Lavoie ,  Benjamin Wymore ,  Markus Brink ,  Stephen L. Brown

Inventor： Christian Lavoie ,  Benjamin Wymore ,  Markus Brink ,  Stephen L. Brown

IPC: H01L39/12 ,  H01L39/24 ,  G06N10/00

Abstract: Techniques facilitating formation of amorphous superconducting alloys for superconducting circuits are provided. A device can comprise one or more superconducting components that comprise an amorphous superconducting alloy comprising two or more elements. At least one element of the two or more elements is a superconducting element.