公开(公告)号：US20080039025A1

公开(公告)日：2008-02-14

申请号：US11833360

申请日：2007-08-03

Applicant: Marcus R. Ray ,  Darrell G. Hill ,  Ricardo A. Uscola

Inventor： Marcus R. Ray ,  Darrell G. Hill ,  Ricardo A. Uscola

IPC: H04B1/38

CPC classification number: H04B1/0475 ,  H04B1/0458

Abstract: A transceiver includes a harmonic termination circuit that receives a tunable harmonic voltage from a power amplifier control. The harmonic termination circuit includes a variable capacitor that is capable of adjusting its capacitance in response to the tunable harmonic termination voltage to achieve at least two modes of operation. The at least two modes of operation may be EDGE mode and GSM mode. In this embodiment, the harmonic termination circuit allows for linearity specifications of EDGE to be met, while not degrading the efficiency of the transceiver when operating in GSM mode. In one embodiment, the harmonic termination circuit further includes an inductive element in series with the variable capacitor.

Abstract translation: 收发器包括从功率放大器控制器接收可调谐谐波电压的谐波终端电路。 谐波终端电路包括可变电容器，其可以响应于可调谐谐波终端电压来调整其电容以实现至少两种操作模式。 至少两种操作模式可以是EDGE模式和GSM模式。 在本实施例中，谐波终端电路允许满足EDGE的线性规格，同时在GSM模式下工作时不降低收发器的效率。 在一个实施例中，谐波终端电路还包括与可变电容器串联的电感元件。

公开(公告)号：US07253455B2

公开(公告)日：2007-08-07

申请号：US11100095

申请日：2005-04-05

Applicant: Bruce M. Green ,  Olin L. Hartin ,  Ellen Y. Lan ,  Philip H. Li ,  Monte G. Miller ,  Matthias Passlack ,  Marcus R. Ray ,  Charles E. Weitzel

Inventor： Bruce M. Green ,  Olin L. Hartin ,  Ellen Y. Lan ,  Philip H. Li ,  Monte G. Miller ,  Matthias Passlack ,  Marcus R. Ray ,  Charles E. Weitzel

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L29/06

CPC classification number: H01L29/7785

Abstract: In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1−xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1−xAs channel layer (512) is formed over the AlxGa1−xAs layer (506). An AlxGa1−xAs layer (518) is formed over the InxGa1−xAs channel layer (512), and the AlxGa1−xAs layer (518) has a second doped region formed therein. A GaAs layer (520) having a first recess is formed over the AlxGa1−xAs layer (518). A control electrode (526) is formed over the AlxGa1−xAs layer (518). A doped GaAs layer (524) is formed over the undoped GaAs layer (520) and on opposite sides of the control electrode (526) and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device (500) maintains linear operation over a wide temperature range.

Abstract translation: 在一个实施例中，半导体器件（500）包括形成在衬底（502）上的缓冲层（504）。 在缓冲层（504）之上形成Al x Ga 1-x As层（506），并且在其中形成有第一掺杂区域（508）。 在Al x Ga 1-x 上形成一个In 1 / x Ga 1-x As As沟道层（512） >作为层（506）。 在In 1 x 1 Ga 1-x N上形成Al x Ga 1-x As层（518） 作为沟道层（512）和Al x Ga 1-x As层（518）具有形成在其中的第二掺杂区域。 具有第一凹陷的GaAs层（520）形成在Al 1 Ga 1-x As层（518）上。 控制电极（526）形成在Al 1 Ga 1-x As As层（518）上。 在未掺杂的GaAs层（520）上和控制电极（526）的相对侧上形成掺杂GaAs层（524），并提供第一和第二电流电极。 当用于放大数字调制信号时，半导体器件（500）在宽的温度范围内保持线性操作。

公开(公告)号：US07305223B2

公开(公告)日：2007-12-04

申请号：US11021843

申请日：2004-12-23

Applicant: Lianjun Liu ,  Jonathan K. Abrokwah ,  Marcus R. Ray

Inventor： Lianjun Liu ,  Jonathan K. Abrokwah ,  Marcus R. Ray

IPC: H04B1/28

CPC classification number: H01L23/5227 ,  H01L23/66 ,  H01L27/016 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H01P5/185 ,  H01L2924/00

Abstract: A radio frequency (“RF”) circuit configured in accordance with an embodiment of the invention is fabricated on a substrate using integrated passive device (“IPD”) process technology. The RF circuit includes at least one RF signal line section and an integrated RF coupler located proximate to the RF signal line section. The integrated RF coupler, its output and grounding contact pads, and its matching network are fabricated on the same substrate using the same IPD process technology. The integrated RF coupler provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit.

Abstract translation: 根据本发明的实施例构造的射频（“RF”）电路使用集成无源器件（“IPD”）处理技术在基板上制造。 RF电路包括至少一个RF信号线部分和位于RF信号线部分附近的集成RF耦合器。 使用相同的IPD工艺技术，在同一基板上制造集成RF耦合器，其输出和接地接触焊盘及其匹配网络。 集成RF耦合器提供高效和可重复的射频耦合，而不增加射频电路的裸片占空比。

公开(公告)号：US08160518B2

公开(公告)日：2012-04-17

申请号：US11833360

申请日：2007-08-03

Applicant: Marcus R. Ray ,  Darrell G. Hill ,  Ricardo A. Uscola

Inventor： Marcus R. Ray ,  Darrell G. Hill ,  Ricardo A. Uscola

IPC: H01Q11/12

CPC classification number: H04B1/0475 ,  H04B1/0458

Abstract: A transceiver includes a harmonic termination circuit that receives a tunable harmonic voltage from a power amplifier control. The harmonic termination circuit includes a variable capacitor that is capable of adjusting its capacitance in response to the tunable harmonic termination voltage to achieve at least two modes of operation. The at least two modes of operation may be EDGE mode and GSM mode. In this embodiment, the harmonic termination circuit allows for linearity specifications of EDGE to be met, while not degrading the efficiency of the transceiver when operating in GSM mode. In one embodiment, the harmonic termination circuit further includes an inductive element in series with the variable capacitor.

Abstract translation: 收发器包括从功率放大器控制器接收可调谐谐波电压的谐波终端电路。 谐波终端电路包括可变电容器，其可以响应于可调谐谐波终端电压来调整其电容以实现至少两种操作模式。 至少两种操作模式可以是EDGE模式和GSM模式。 在本实施例中，谐波终端电路允许满足EDGE的线性规格，同时在GSM模式下工作时不降低收发器的效率。 在一个实施例中，谐波终端电路还包括与可变电容器串联的电感元件。