Abstract:
Provided is a process for forming a barrier film to prevent resist poisoning in a semiconductor device by depositing a second nitrogen-free barrier layer on top of a first barrier layer containing nitrogen. A low-k dielectric layer is formed over the second barrier layer. This technique maintains the low electrical leakage characteristics of the first barrier layer and reduces nitrogen poisoning of a photoresist layer subsequently applied.
Abstract:
An apparatus comprising a first processing circuit and a second processing circuit. The first processing circuit may be configured to generate (i) one or more prediction samples and (ii) a plurality of macroblocks, in response to each frame of an input video signal. The second processing circuit may be configured to (i) select one or more reference indices for each of the macroblocks from one or more sets of reference indices and (ii) generate said one or more prediction samples in response to said selected reference indices. Each of the selected reference indices is generally determined based upon minimum and maximum values for each of the one or more sets of reference indices.
Abstract:
A method for storing data of a plurality of components of an image in a memory system with four banks comprising the steps of (A) placing a first portion of data of a first component of the plurality of components into a first bank of the four banks and (B) placing a second portion of the data of the first component in a second bank of the four banks, where all of the data of the first component is stored in the first and second banks and occupies at least three pages in the memory system.
Abstract:
An apparatus comprising a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a plurality of first motion vectors and first error scores in response to a search of a macroblock of an image. The search generally comprises a range of motion vectors of the macroblock. The second circuit may be configured to generate a plurality of second motion vectors and second error scores for a plurality of sub-blocks of the macroblock in response to a set of discrete candidate motion vectors selected from the plurality of first motion vectors. The third circuit may be configured to segment the macroblock in response to (i) the plurality of first motion vectors and first error scores and (ii) the plurality of second motion vectors and second error scores.
Abstract:
An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate a plurality of match signals in response to an incoming data signal. Each match signal is generated in response to different search criteria. The second circuit may be configured to present a protocol indication signal in response to the plurality of match signals.
Abstract:
An apparatus and method for storing image data comprising a first storage device and a second storage device. The first storage device may be configured to store at least one first pixel from a first field of a frame of the image at a first physical address in the first storage device. The second storage device may be configured to store a second pixel from a second field of the frame of the image at a second physical address in the second storage device. The first and second physical addresses may have the same relative position in an address space of the respective storage devices.
Abstract:
A bonding pad for an integrated circuit, having a conductive base layer. The conductive base layer has slots formed in it, where the slots extend completely through the conductive base layer. An insulating layer is disposed on top of the conductive base layer. The insulating layer protrudes into the slots of the conductive base layer. The insulating layer also includes a low k material. A conductive top layer is disposed on top of the insulating layer.
Abstract:
A new relatively high-k gate dielectric gate material comprising calcium oxide will reduce leakage from the silicon substrate to the polysilicon gate, prevent boron penetration in p-channel devices, and reduce electron trapping in the dielectric. The surface of a silicon wafer is saturated with hydroxyl groups. A calcium halide, preferably calcium bromide, is heated to a temperature sufficient to achieve atomic layer deposition, and is transported to the silicon wafer. The calcium halide reacts with the hydroxyl groups. Water is added to carry away the resultant hydrogen halide. Gaseous calcium and water are then added to form a calcium oxide gate dielectric, until the desired thickness has been achieved. In an alternative embodiment of the method, the calcium halide is transported to the silicon wafer to react with the hydroxyl groups, followed by transport of gaseous water to the silicon wafer. These two steps are repeated until the desired thickness has been achieved.
Abstract:
An apparatus comprising a first circuit, a second circuit, and a third circuit. The first circuit may be configured to receive a plurality of input signals and present one of the plurality of input signals as a data signal in response to a control signal. The second circuit may be configured to generate the control signal and generate a trace data stream in response to the data signal. The third circuit may be configured to receive and store the trace data stream and read and present the stored trace data stream in response to one or more commands.
Abstract:
An apparatus comprising a plurality of first circuits and a second circuit. Each of the first circuits may be configured to translate attributes and data between one of a plurality of first predetermined formats and a second predetermined format. The second circuit may be configured to route the attributes and data in the second predetermined format from one of the first circuits to another of the first circuits.