摘要:
A memory controller issues a targeted refresh command. A specific row of a memory device can be the target of repeated accesses. When the row is accessed repeatedly within a time threshold (also referred to as “hammered” or a “row hammer event”), physically adjacent row (a “victim” row) may experience data corruption. The memory controller receives an indication of a row hammer event, identifies the row associated with the row hammer event, and sends one or more commands to the memory device to cause the memory device to perform a targeted refresh that will refresh the victim row.
摘要:
A clock divider circuitry and method for use in a dynamic random access memory device. The method may include receiving a clock input signal having a first frequency from a clock input receiver at clock divider circuitry, the clock divider circuitry including a flip-flop configured to generate an output signal, based at least in part, on an inverted output signal and the clock input signal. The output signal may have a second frequency that is a fraction of the first frequency. The method may further include receiving the clock input signal and the output signal at a multiplexer and generating a multiplexed output. The method may additionally include receiving the multiplexed output at a first bus configured to receive the multiplexed output and to reduce an operational frequency of the first bus in response to an increase in an operational frequency of a second bus associated with the memory device.
摘要:
Data regarding physical parameters and security and commands to send such data can be communicated between a memory device and a memory controller using a memory bus connected between the two. In one embodiment, the invention includes receiving a first command at a memory device on a memory bus, the first command being other than a read or write command, and receiving a second command together with the first command, the second command to be initiated using lines that are not used by the first command.
摘要:
In some embodiments, data may be transferred from a first memory agent to a second memory agent in a first format having a first width, and at least a critical portion of the data maybe transferred from the second memory agent back to the first memory agent in a second format having a second width, where the critical portion is included in a first frame. The critical portion may include a cacheline mapped over a memory device rank. Other embodiments are described and claimed.
摘要:
A memory module has an array of connections. The array of connections is arranged in rows and columns such that there are first and second outer columns. Connections in the first and second outer columns can be interchanged to optimize double-side module placement on a substrate.
摘要:
Method and apparatus for use with buffered memory modules are included among the embodiments. In exemplary systems, a serial presence detect function is included within a memory module buffer instead of being provided by a separate EEPROM device mounted on the memory module. Various embodiments thus can provide cost savings, chip placement and signal routing simplification, and can in some circumstances save pins on the module. Other embodiments are described and claimed.
摘要:
Apparatus and method to carry out refresh operations on rows of memory cells within a memory device independently of a memory controller during times when there is no activity on a memory bus coupling the memory device to the memory controller that involves the memory device.
摘要:
Described herein is a method and apparatus to interface a processor with a heterogeneous dual in-line memory module (DIMM). The method comprises determining an identity of a DIMM having data lanes; mapping the data lanes based on the determining of the identity of the DIMM; training input-output (I/O) transceivers in response to the mapping of the data lanes; and transferring data to and from the DIMM after training the I/O transceivers.
摘要:
A memory module has an array of connections. The array of connections is arranged in rows and columns such that there are first and second outer columns. Connections in the first and second outer columns can be interchanged to optimize double-side module placement on a substrate.
摘要:
Embodiments of the invention are generally directed to systems, methods, and apparatuses for using the same memory type in an error check mode and a non-error check mode. In some embodiments, a memory device includes at least one split bank pair of memory banks. If the memory device is in an error check mode, then, in some embodiments, data is stored in one of memory banks of the split bank pair and the corresponding error check bits are stored in the other memory bank of the split bank pair. A register bit on the memory device indicates whether it is in the error check mode or the non-error check mode. Other embodiments are described and claimed.