公开(公告)号：US20140183092A1

公开(公告)日：2014-07-03

申请号：US14129423

申请日：2012-06-12

申请人： Ryoji Otaki ,  Kenji Kouno ,  Hiroshi Kobayashi

发明人： Ryoji Otaki ,  Kenji Kouno ,  Hiroshi Kobayashi

IPC分类号： B29D22/00 ,  B65D1/00

CPC分类号： B29D22/003 ,  B29C47/0023 ,  B29C47/20 ,  B29C47/705 ,  B29C49/04 ,  B29K2077/00 ,  B29K2995/0067 ,  B29K2995/0069 ,  B29L2031/715 ,  B29L2031/7158 ,  B29L2031/7172 ,  B65D1/00

摘要： The present invention provides a method of manufacturing a practical direct-blow molded container having excellent barrier property against fuels, chemicals, various gases including oxygen. The method of manufacturing a practical direct-blow molded container containing the metaxylylene group-containing polyamide (C) being dispersed and layered in the polyolefin (A) includes using a die provided with a die body having a flow hole in which the melted resin extruded from an extruder flows and a cylindrical hollow having an opening in the lower side and the flow hole in the upper side, the opening and the flow hole opening downward and upward, respectively, a mandrel having a tip in the upper side, the tip pointing to the opening of the tip of the flow hole, a flow path clearance formed between the hollow of the die body and the mandrel, the flow path clearance defining a resin flow path, and a support part formed in the flow path clearance, the support part holding the mandrel in the hollow of the die body.

摘要翻译： 本发明提供一种制造实用的直吹式成型容器的方法，该容器对燃料，化学品，包括氧的各种气体具有优异的阻隔性。 含有含聚亚甲基基团的聚酰胺（C）的实施例的直吹式成型容器的制造方法包括使用具有流动孔的模具的模具，其中熔融树脂挤出 从挤出机流出的圆筒形中空部和具有下侧开口部和上侧流动孔的圆筒状的中空部分，开口部和流动孔分别向下方开口，具有上侧的尖端的芯棒， 到流动孔的尖端的开口，形成在模具本体的中空部和心轴之间的流路间隙，限定树脂流路的流路间隙和形成在流路间隙中的支撑部，支撑体 将心轴保持在模具本体的中空部分中。

公开(公告)号：US20130251927A1

公开(公告)日：2013-09-26

申请号：US13989936

申请日：2011-11-29

申请人： Kenji Kouno ,  Ryoji Otaki

发明人： Kenji Kouno ,  Ryoji Otaki

IPC分类号： B29D22/00 ,  C08L77/00 ,  C08L23/26 ,  B65D1/00 ,  C08L23/02

CPC分类号： B29C48/92 ,  B29B7/42 ,  B29B7/429 ,  B29B7/726 ,  B29B7/826 ,  B29C48/022 ,  B29C48/023 ,  B29C48/03 ,  B29C48/08 ,  B29C48/30 ,  B29C48/35 ,  B29C48/397 ,  B29C48/53 ,  B29C48/625 ,  B29C48/793 ,  B29C48/83 ,  B29C48/865 ,  B29C48/875 ,  B29C48/91 ,  B29C48/914 ,  B29C48/916 ,  B29C49/04 ,  B29C2049/001 ,  B29C2948/92209 ,  B29C2948/924 ,  B29C2948/9259 ,  B29C2948/92647 ,  B29C2948/92704 ,  B29C2948/92895 ,  B29C2948/92904 ,  B29D22/003 ,  B29K2023/00 ,  B29K2077/00 ,  B29K2105/0097 ,  B29K2995/0058 ,  B29L2031/7172 ,  B65D1/00 ,  C08L23/02 ,  C08L23/26 ,  C08L77/00 ,  C08L77/06 ,  Y10T428/1352 ,  C08L2666/06

摘要： The molded article includes a resin composition with a single shaft extruder, in which the resin composition is generated by melting and mixing a raw mixture, the raw mixture being obtained by blending 40-90 parts by mass of the polyolefin (A), 3-30 parts by mass of the metaxylylene group-containing polyamide (B), and 3-50 parts by mass of the modified polyolefin (C). In the single shaft extruder, the ratio of the length of the feeding part to the screw effective length is 0.40-0.55, the ratio of the length of the compressing part to the screw effective length is 0.10-0.30, the ratio of the length of the measuring part to the screw effective length is 0.10-0.40, the upper limit of the temperature of the feeding part falls within the range of +20° C. from the melting point of the metaxylylene group-containing polyamide or less, and the temperatures of the compressing part and the measuring part fall within the range of −30° C. to +20° C. from the melting point of the metaxylylene group-containing polyamide, and the shear rate is 14/second or more.

摘要翻译： 成型体包括具有单轴挤出机的树脂组合物，其中通过将原料混合物熔融混合而生成树脂组合物，该混合物通过将40-90质量份的聚烯烃（A），3- 30质量份含有间亚二甲苯基的聚酰胺（B）和3-50质量份的改性聚烯烃（C）。 在单轴挤出机中，进料部分长度与螺杆有效长度之比为0.40-0.55，压缩部分长度与螺杆有效长度之比为0.10-0.30，长度比 螺杆有效长度的测量部分为0.10-0.40，进料部分的温度的上限从含有含亚甲基基团的聚酰胺的熔点降低到+ 20℃的范围内，温度 的压缩部分和测量部分在-30℃至+ 20℃的范围内，并且剪切速率为14秒/秒以上。

公开(公告)号：US20130087829A1

公开(公告)日：2013-04-11

申请号：US13805740

申请日：2011-06-29

申请人： Hiromitsu Tanabe ,  Kenji Kouno ,  Yukio Tsuzuki

发明人： Hiromitsu Tanabe ,  Kenji Kouno ,  Yukio Tsuzuki

IPC分类号： H01L27/07

CPC分类号： H01L27/0664 ,  H01L27/0722 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

摘要： In a semiconductor device including an IGBT and a freewheeling diode (FWD), W1, W2, and W3 satisfy predetermined formulas. W1 denotes a distance from a boundary between a cathode region and a collector region to a position, where a peripheral-region-side end of the well layer is projected, on a back side of the drift layer. W2 denotes a distance from a boundary between the IGBT and the FWD in a base region to the peripheral-region-side end of the well layer. W3 denotes a distance from the boundary between the cathode region and the collector region to a position, where a boundary between the base region and the well layer is projected, on the back side.

摘要翻译： 在包括IGBT和续流二极管（FWD）的半导体器件中，W1，W2和W3满足预定的公式。 W1表示从阴极区域和集电极区域之间的边界到阱层的周边区域侧端部投射在位于漂移层的背面的位置的距离。 W2表示从基极区域到阱区域的周边区域侧的IGBT与FWD之间的边界的距离。 W3表示从阴极区域和集电极区域之间的边界到背面侧的基底区域和阱层之间的边界的位置的距离。

公开(公告)号：US08405122B2

公开(公告)日：2013-03-26

申请号：US13010307

申请日：2011-01-20

申请人： Kenji Kouno ,  Yukio Tsuzuki

发明人： Kenji Kouno ,  Yukio Tsuzuki

IPC分类号： H01L29/66

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/7391 ,  H01L29/7393 ,  H01L29/7394

摘要： An insulated gate semiconductor device includes a semiconductor substrate, channel regions, floating regions, an emitter region, a body region, a hole stopper layer, and an emitter electrode. The channel regions and the floating regions are repeatedly arranged such that at least one floating region is located between adjacent channel regions. The emitter region and the body region are located in a surface portion of each channel region. The body region is deeper than the emitter region. The hole stopper layer is located in each floating region to divide the floating region into a first region and a second region. The emitter electrode is electrically connected to the emitter region and the first region.

摘要翻译： 绝缘栅半导体器件包括半导体衬底，沟道区，浮置区，发射区，体区，空穴阻挡层和发射极。 沟道区域和浮置区域被重复布置，使得至少一个浮动区域位于相邻沟道区域之间。 发射极区域和体区域位于每个沟道区域的表面部分中。 身体区域比发射极区域更深。 空穴阻挡层位于每个浮动区域中，以将浮动区域划分成第一区域和第二区域。 发射极电极与发射极区域和第一区域电连接。

公开(公告)号：US20120132954A1

公开(公告)日：2012-05-31

申请号：US13301973

申请日：2011-11-22

申请人： Kenji KOUNO ,  Hiromitsu Tanabe ,  Yukio Tsuzuki

发明人： Kenji KOUNO ,  Hiromitsu Tanabe ,  Yukio Tsuzuki

IPC分类号： H01L27/06 ,  H01L29/772 ,  H01L29/06

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611

摘要： A semiconductor device includes a semiconductor substrate with a first surface and a second surface. The semiconductor substrate has an element region including an IGBT region and a diode region located adjacent to the IGBT region. An IGBT element is formed in the IGBT region. A diode element is formed in the diode region. A heavily doped region of first conductivity type is located on the first surface side around the element region. An absorption region of first conductivity type is located on the second surface side around the element region. A third semiconductor region of second conductivity type is located on the second surface side around the element region.

摘要翻译： 半导体器件包括具有第一表面和第二表面的半导体衬底。 半导体基板具有包括IGBT区域和位于IGBT区域附近的二极管区域的元件区域。 在IGBT区域中形成IGBT元件。 在二极管区域中形成二极管元件。 第一导电类型的重掺杂区域位于围绕元件区域的第一表面侧上。 第一导电类型的吸收区域位于元件区域周围的第二表面侧。 第二导电类型的第三半导体区域位于元件区域周围的第二表面侧。

公开(公告)号：US08168999B2

公开(公告)日：2012-05-01

申请号：US12385164

申请日：2009-03-31

申请人： Yukio Tsuzuki ,  Kenji Kouno

发明人： Yukio Tsuzuki ,  Kenji Kouno

IPC分类号： H01L27/06 ,  H01L29/739

CPC分类号： H01L29/861 ,  H01L29/0619 ,  H01L29/167 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/8611

摘要： A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the active element cell area; a second semiconductor region on a second side of the substrate in the IGBT cell region; a third semiconductor region on the second side in the diode cell region; a fourth semiconductor region on the first side surrounding the active element cell area; a fifth semiconductor region on the first side surrounding the fourth semiconductor region; and a sixth semiconductor region on the second side below the fourth semiconductor region. The second semiconductor region, the third semiconductor region and the sixth semiconductor region are electrically coupled with each other.

摘要翻译： 半导体器件包括：衬底; 包括IGBT单元区域和二极管单元区域的有源元件单元区域; 在所述有源元件单元区域中的所述基板的第一侧上的第一半导体区域; 在所述IGBT单元区域中的所述衬底的第二侧上的第二半导体区域; 在二极管单元区域中的第二侧上的第三半导体区域; 围绕所述有源元件单元区域的所述第一侧上的第四半导体区域; 围绕第四半导体区域的第一侧的第五半导体区域; 以及在第四半导体区域下方的第二侧上的第六半导体区域。 第二半导体区域，第三半导体区域和第六半导体区域彼此电耦合。

公开(公告)号：US08072241B2

公开(公告)日：2011-12-06

申请号：US12230794

申请日：2008-09-04

申请人： Kenji Kouno

发明人： Kenji Kouno

IPC分类号： H01L29/78 ,  H03K19/08

CPC分类号： H01L27/0255 ,  H01L29/7397 ,  H01L2924/0002 ,  H02M1/32 ,  H02M2001/0009 ,  H03K17/0828 ,  H03K17/145 ,  H03K2217/0027 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

摘要翻译： 半导体器件包括：半导体衬底; 具有绝缘栅双极晶体管和二极管的二极管内置绝缘栅双极晶体管，其设置在所述衬底中，其中所述绝缘栅双极晶体管包括栅极，并且由输入到所述栅极的驱动信号驱动 门; 以及用于检测通过二极管的电流的反馈单元。 驱动信号从外部单元输入到反馈单元。 当反馈单元检测到没有通过二极管的电流时，反馈单元将驱动信号传递到绝缘栅双极晶体管的栅极，并且当反馈单元反馈时，反馈单元停止将驱动信号传递到绝缘栅双极晶体管的栅极 单元检测通过二极管的电流。

公开(公告)号：US20100187567A1

公开(公告)日：2010-07-29

申请号：US12656340

申请日：2010-01-26

申请人： Hiromitsu Tanabe ,  Kenji Kouno ,  Yukio Tsuzuki ,  Shinji Amano

发明人： Hiromitsu Tanabe ,  Kenji Kouno ,  Yukio Tsuzuki ,  Shinji Amano

IPC分类号： H01L29/739

CPC分类号： H01L29/0834 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/861 ,  H01L2924/0002 ,  H03K2217/0027 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a first surface and a second surface. A main region and a sensing region are formed on the first surface side of the semiconductor substrate. A RC-IGBT is formed in the main region and a sensing element for passing electric currents proportional to electric currents flowing through the RC-IGBT is formed in the sensing region. A collector region and a cathode region of the sensing element are formed on the second surface side of the semiconductor substrate. The collector region is located directly below the sensing region in a thickness direction of the semiconductor substrate. The cathode region is not located directly below the sensing region in the thickness direction.

摘要翻译： 半导体器件包括具有第一表面和第二表面的半导体衬底。 主区域和感测区域形成在半导体衬底的第一表面侧上。 在主区域中形成RC-IGBT，并且在感测区域中形成用于使电流与流过RC-IGBT的电流成比例的电流的感测元件。 感测元件的集电极区域和阴极区域形成在半导体衬底的第二表面侧上。 集电极区域位于半导体基板的厚度方向的感测区域正下方。 阴极区域不位于厚度方向的感测区域正下方。

公开(公告)号：US20100090248A1

公开(公告)日：2010-04-15

申请号：US12588310

申请日：2009-10-13

申请人： Kenji Kouno

发明人： Kenji Kouno

IPC分类号： H01L27/06

CPC分类号： H01L29/7395 ,  H01L29/861

摘要： A semiconductor device includes: a semiconductor substrate; an IGBT element including a collector region; a FWD element including a cathode region adjacent to the collector region; a base layer on the substrate; multiple trench gate structures including a gate electrode. The base layer is divided by the trench gate structures into multiple first and second regions. Each first region includes an emitter region contacting the gate electrode. Each first region together with the emitter region is electrically coupled with an emitter electrode. The first regions include collector side and cathode side first regions, and the second regions include collector side and cathode side second regions. At least a part of the cathode side second region is electrically coupled with the emitter electrode, and at least a part of the collector side second region has a floating potential.

摘要翻译： 半导体器件包括：半导体衬底; 包括集电极区域的IGBT元件; 包括与集电区相邻的阴极区的FWD元件; 基底上的基层; 包括栅电极的多沟槽栅结构。 基极层被沟槽栅极结构分成多个第一和第二区域。 每个第一区域包括与栅电极接触的发射极区域。 每个第一区域与发射极区域一起与发射电极电耦合。 第一区域包括集电极侧和阴极侧第一区域，第二区域包括集电极侧和阴极侧第二区域。 阴极侧第二区域的至少一部分与发射电极电耦合，并且集电极侧第二区域的至少一部分具有浮动电位。

公开(公告)号：US07638202B2

公开(公告)日：2009-12-29

申请号：US11524266

申请日：2006-09-21

申请人： Hiroyuki Nanba ,  Kenji Kouno ,  Atsushi Nakagawa

发明人： Hiroyuki Nanba ,  Kenji Kouno ,  Atsushi Nakagawa

IPC分类号： C08L51/08

CPC分类号： C08J5/18 ,  B32B7/12 ,  B32B27/08 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2038/0028 ,  B32B2274/00 ,  B32B2307/412 ,  B32B2307/518 ,  B32B2307/536 ,  B32B2307/546 ,  B32B2307/558 ,  B32B2307/7242 ,  B32B2377/00 ,  B32B2439/40 ,  B32B2439/70 ,  C08J2377/06 ,  C08L51/08 ,  C08L77/06 ,  Y10T428/31725 ,  Y10T428/31728 ,  C08L2666/24

摘要： A stretched polyamide film including at least one stretched layer made of a mixed resin containing a polyamide resin and a modified polyester-based elastomer Y. The polyamide resin X is mainly constituted by m-xylylenediamine unit and C6-12 α,ω-aliphatic dicarboxylic acid unit. The modified polyester-based elastomer is graft-modified with an ethylenically unsaturated carboxylic acid or its anhydride. Such stretched polyamide film is drastically improved in the flexibility, impact resistance and pin-hole resistance with little reduction in the gas-barrier properties while retaining an enough transparency to practical use.

摘要翻译： 拉伸聚酰胺薄膜，其包含至少一层由含有聚酰胺树脂和改性聚酯类弹性体Y的混合树脂制成的拉伸层。聚酰胺树脂X主要由间苯二甲苯单元和C6-12α，ω-脂族二羧酸 酸单位。 改性聚酯类弹性体用烯键式不饱和羧酸或其酸酐进行接枝改性。 这种拉伸聚酰胺薄膜在柔性，耐冲击性和针孔阻力方面显着提高，同时保持足够的实用透明度，阻气性能几乎不降低。