Abstract:
A substrate processing apparatus including a holder for rotatably holding a substrate; a coating solution supply nozzle for supplying a coating solution onto a front surface of the substrate to be processed held by the holder; a treatment chamber housing the holder and the coating solution supply nozzle; a cooling device which cools the substrate before the coating solution is supplied to the substrate, to a predetermined temperature; a heating devices which heats the substrate coated with the coating solution to a predetermined temperature; and a transferer that transfers the substrate between the treatment chamber, the cooling device and the heating device, wherein the treatment chamber, the cooling device and the heating device are partitioned from ambient air, and wherein at least the treatment chamber is connected to a gas supply mechanism having a supply source of a gas having a kinematic viscosity coefficient higher than that of air.
Abstract:
A microcomputer is provided having a memory card interface capable of correctly latching data even when a card such as an MMC card is connected thereto. In the microcomputer having an interface with an external device such as a memory card, the interface unit is provided with an output driver connected to an external terminal for outputting a clock signal to output the clock signal and with an equivalent load circuit capable of imparting, to the clock signal extracted from an arbitrary position in a stage previous to the output driver in a clock signal path, delay equivalent to delay resulting from an external load connected to the external terminal in order to generate a clock signal for latching data inputted from the memory card.
Abstract:
A substrate treatment apparatus of the present invention includes: a holding means for rotatably holding a substrate to be treated; a coating solution supply nozzle for supplying a coating solution onto the front surface of the substrate to be treated held on the holding means; a treatment container with an upper surface open for housing them; an exhaust means for exhausting an atmosphere in the treatment container from the bottom; a multiblade centrifugal fan provided on the inner periphery of the treatment container for flowing airflow on a front surface side of the substrate to the exhaust means; and a controller for controlling the number of rotations of the multiblade centrifugal fan corresponding to the number of rotations of the substrate, wherein the number of rotations of the multiblade centrifugal fan is controlled so that turbulent airflow flowing in a circumferential direction on the front surface of the substrate generated due to the rotation of the substrate is corrected to laminar airflow flowing in a radial direction.
Abstract:
A radio-controlled timepiece in which its reception sensitivity is further enhanced. The radio-controlled timepiece includes: an antenna core 11 made of a magnetic material and formed as a single integrated body including a coiled portion (11a) wound with a coil 19 and extension portions 11b and 11c which are located respectively on the end-portion sides; additional cores 15 and 16 made of a magnetic material; magnetism-collection members 17 and 18 made of a magnetic material; a main plate 31 (timepiece substrate) made of a non-magnetic material; a guide member 33 made of a non-magnetic material; and a liquid-crystal-panel supporting frame 32 (magnetism-collection-member supporting members, pressing member) made of a non-magnetic material and having protrusions 32a and 32b (pressing members) formed thereon. When the main plate 31, the guide member 33, and the liquid-crystal-panel supporting frame 32 are assembled together, the protrusions 32a and 32b press the magnetism-collection members, respectively. Thus, the magnetism-collection members 17 and 18 come into contact respectively with the additional cores 15 and 16, and, at the same time, the additional cores 15 and 16 come into contact respectively with the extension portions 11b and 11c of the antenna core 11. Accordingly an antenna-core body with a large single body is formed, which enhances the reception performance.
Abstract:
The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.
Abstract:
A substrate treatment apparatus of the present invention includes: a holding means for rotatably holding a substrate to be treated; a coating solution supply nozzle for supplying a coating solution onto the front surface of the substrate to be treated held on the holding means; a treatment container with an upper surface open for housing them; an exhaust means for exhausting an atmosphere in the treatment container from the bottom; a multiblade centrifugal fan provided on the inner periphery of the treatment container for flowing airflow on a front surface side of the substrate to the exhaust means; and a controller for controlling the number of rotations of the multiblade centrifugal fan corresponding to the number of rotations of the substrate, wherein the number of rotations of the multiblade centrifugal fan is controlled so that turbulent airflow flowing in a circumferential direction on the front surface of the substrate generated due to the rotation of the substrate is corrected to laminar airflow flowing in a radial direction.
Abstract:
In a semi-molten metal injection molding method of producing a thin molded product by injecting a semi-molten metal M of a magnesium alloy, in a semi-melting state, into a cavity of a mold through a product gate, characterized in that it is made possible to obtain a high-quality thin molded product by maintaining satisfactory fluidity of the semi-molten metal M. A grain size of the solid fraction in the melt M is set to not more than 0.13 times the average thickness of the product portion of the thin molded product and a molten metal velocity at the product gate is set to not less than 30 m/s and, moreover, a solid fraction Fs (%) of the semi-molten metal M and a grain size D (&mgr;m) of the solid phase of the semi-molten metal M are set so as to define the relationship Fs×D≦1500.
Abstract:
In a semi-molten metal injection molding method of producing a thick molded article by injecting a semi-molten melt M of a magnesium alloy, in a semi-melting state, into a cavity 13 of a mold 11 through a product gate 17, characterized in that it is made possible to obtain a high-quality thick molded article free from internal defects. A solid fraction of the semi-molten melt M is set to not less than 10%, and more preferably within a range of 40 to 80%. A sectional area Sg of a product gate portion of the thick molded article corresponding to the product gate 17 is set to not less than 0.1 times a sectional area Sp in the vicinity of the product gate 17 in the product portion corresponding to the cavity 13. Furthermore, a product gate velocity Vg mm/s of the semi-molten melt M, a sectional area Sg mm2 of the product gate portion of the thick molded article and a volume Vp mm3 of the product portion are set so as to satisfy the following relationships: Vg≦8.0×104; and, Vg×Sg/Vp≧10.
Abstract:
To provide a coating apparatus which is capable of making short a lag time up to action of a valve and making operate a discharging pump and a valve with the best timing. By employing electric-air regulators ER1 and ER2 of small size and high response speed as a speed controller for controlling a switching speed of a switching valve AV or a suck-back valve SV, total flowing course is made short, thereby a time lag up to operation of a valve is made short. Further, by detecting the pressure of a resist liquid being discharged from a discharging pump 120 by a pressure sensor 123, and by controlling the operation of each device of a discharging pump 120, a switching valve AV, and a suck-back valve SV through a controller 180, a discharging pump 120, a switching valve AV, and a suck-back valve SV can be operated with the best timings, and generation of particles due to dripping of a resist liquid at a tip end of a resist nozzle 60 is prevented from occurring.
Abstract:
In order to provide a die structure for injection molding of a light alloy free from gas defects, and a method of molding a light alloy parts using the die, the die structure is used for converting a light alloy into a semi-molten state, wherein a solid phase and a liquid phase coexist, or a molten state at a temperature just above a melting point and injecting the molten metal into an interior cavity portion, and S1/S2 of a gate sectional area S1 with respect to a maximum sectional area S2 of the cavity of the mold which area is almost perpendicular to the flowing direction of the melt therein is set in a range of 0.06 to 0.5.