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    Vaporizer and apparatus for vaporizing and supplying
    1.
    发明申请
    Vaporizer and apparatus for vaporizing and supplying 审中-公开

    公开(公告)号：US20060125129A1

    公开(公告)日：2006-06-15

    申请号：US11345525

    申请日：2006-02-02

    申请人： Yukichi Takamatsu ,  Kazuaki Tonari ,  Mitsuhiro Iwata ,  Koji Kiriyama ,  Akira Asano

    发明人： Yukichi Takamatsu ,  Kazuaki Tonari ,  Mitsuhiro Iwata ,  Koji Kiriyama ,  Akira Asano

    IPC分类号： B01F3/04

    CPC分类号： C23C16/4485 ,  Y10S261/65

    摘要： The present invention provides a vaporizer having a vaporization chamber for a CVD material, a CVD material feed portion supplying the CVD material for the vaporization chamber, a vaporized gas exhaust port and a heater for heating the vaporization chamber, wherein the CVD material feed portion has passageways for the CVD material and for a carrier gas respectively and the passageway for the CVD material has a pressure loss inducer for the CVD material. At the same time, the present invention provides an apparatus for vaporizing and supplying that feeds a CVD material to a vaporizer via a liquid flow controller, and after vaporizing the CVD material that supplies the vaporized gas for a semiconductor production apparatus having a pressure loss-inducer for the CVD material between the liquid flow controller and the vaporizer. According to the present invention, even in the case of vaporizing and supplying with a decrease in a feed amount of a carrier gas to be supplied accompanying the CVD material employing a solid CVD material, reducing and stabilizing both the pressure fluctuation in the vaporizer and the flow rate fluctuation in the liquid flow controller and efficiently vaporizing a CVD material at a desirable concentration and flow rate without causing deposit or adhesion of the solid material in the vaporization chamber can be achieved.

    Vaporizer and apparatus for vaporizing and supplying
    2.
    发明授权
    Vaporizer and apparatus for vaporizing and supplying 失效
    蒸发器和蒸发和供应装置

    公开(公告)号：US07036801B2

    公开(公告)日：2006-05-02

    申请号：US10413204

    申请日：2003-04-15

    申请人： Yukichi Takamatsu ,  Kazuaki Tonari ,  Mitsuhiro Iwata ,  Koji Kiriyama ,  Akira Asano

    发明人： Yukichi Takamatsu ,  Kazuaki Tonari ,  Mitsuhiro Iwata ,  Koji Kiriyama ,  Akira Asano

    IPC分类号： B01F3/04

    CPC分类号： C23C16/4485 ,  Y10S261/65

    摘要： The present invention provides a vaporizer having a vaporization chamber for a CVD material, a CVD material feed portion supplying the CVD material for the vaporization chamber, a vaporized gas exhaust port and a heater for heating the vaporization chamber, wherein the CVD material feed portion has passageways for the CVD material and for a carrier gas respectively and the passageway for the CVD material has a pressure loss inducer for the CVD material. At the same time, the present invention provides an apparatus for vaporizing and supplying that feeds a CVD material to a vaporizer via a liquid flow controller, and after vaporizing the CVD material that supplies the vaporized gas for a semiconductor production apparatus having a pressure loss-inducer for the CVD material between the liquid flow controller and the vaporizer. According to the present invention, even in the case of vaporizing and supplying with a decrease in a feed amount of a carrier gas to be supplied accompanying the CVD material employing a solid CVD material, reducing and stabilizing both the pressure fluctuation in the vaporizer and the flow rate fluctuation in the liquid flow controller and efficiently vaporizing a CVD material at a desirable concentration and flow rate without causing deposit or adhesion of the solid material in the vaporization chamber can be achieved.

    摘要翻译： 本发明提供了一种蒸发器，其具有用于CVD材料的蒸发室，供应用于蒸发室的CVD材料的CVD材料进料部分，蒸发气体排出口和用于加热蒸发室的加热器，其中CVD材料进料部分 分别用于CVD材料和载气的通道，CVD材料的通道具有用于CVD材料的压力损失诱导剂。 同时，本发明提供了一种用于蒸发和供应的装置，其通过液体流量控制器将CVD材料供应到蒸发器，并且在蒸发用于具有压力损失的半导体制造装置的蒸发气体的CVD材料之后， 用于液体流量控制器和蒸发器之间的CVD材料的诱导剂。 根据本发明，即使在使用固体CVD材料伴随CVD材料供给的载气的供给量的蒸发和供给减少的情况下，也可以减少和稳定蒸发器中的压力波动和 可以实现液体流量控制器中的流量波动并且以期望的浓度和流速有效地蒸发CVD材料，而不会导致固体材料在蒸发室中的沉积或粘附。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20160118388A1

    公开(公告)日：2016-04-28

    申请号：US14890875

    申请日：2014-05-09

    申请人： Kazuaki TONARI ,  Yuki TOGASHI

    发明人： Kazuaki Tonari ,  Yuki Togashi

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10855 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L29/4236 ,  H01L29/66795

    摘要： A first space partitioned by first and second line patters (52, 53) is filled with a multilayer film that is composed of a first silicon film (55) having a high impurity concentration (a first concentration) relative to a standard plug impurity concentration (a third concentration) and a second silicon film (57) having a low impurity concentration (a second concentration) relative to the standard plug impurity concentration, and is divided by forming a groove (59) using a mask film (58) on the side wall of the second line pattern (53). As a result, expansion of a seam, which is formed only on the second silicon film (57) having a low impurity concentration, is suppressed. After that, an isolation insulating film is embedded in the groove and impurity diffusion is carried out by a heat treatment, so that divided plugs (60) as a whole are made to have the third concentration.

    摘要翻译： 由第一和第二线图案（52,53）分隔的第一空间填充有多层膜，该多层膜由相对于标准插塞杂质浓度的杂质浓度高（第一浓度）的第一硅膜（55） 第三浓度）和相对于标准插塞杂质浓度具有低杂质浓度（第二浓度）的第二硅膜（57），并且通过在侧面上使用掩模膜（58）形成凹槽（59） 第二线图案（53）的壁。 结果，抑制仅在具有低杂质浓度的第二硅膜（57）上形成的接缝的膨胀。 之后，将隔离绝缘膜嵌入槽中，通过热处理进行杂质扩散，从而使分割插塞（60）整体上具有第三浓度。

    Vaporizer and apparatus for vaporizing and supplying
    7.
    发明授权
    Vaporizer and apparatus for vaporizing and supplying 失效
    蒸发器和蒸发和供应装置

    公开(公告)号：US06473563B2

    公开(公告)日：2002-10-29

    申请号：US09986901

    申请日：2001-11-13

    申请人： Yukichi Takamatsu ,  Takeo Yoneyama ,  Koji Kiriyama ,  Akira Asano ,  Kazuaki Tonari ,  Mitsuhiro Iwata

    发明人： Yukichi Takamatsu ,  Takeo Yoneyama ,  Koji Kiriyama ,  Akira Asano ,  Kazuaki Tonari ,  Mitsuhiro Iwata

    IPC分类号： C23C1400

    CPC分类号： C23C16/4411 ,  C23C16/4404 ,  C23C16/4481

    摘要： There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler. The vaporizer and apparatus, when used for supplying a gaseous CVD-material to CVD equipment for producing semiconductors, enables the CVD material to be efficiently vaporized and supplied at desirable concentration and flow rate without causing deposit or adhesion of the CVD material at a CVD material feed port even if a solid CVD-material is used.

    摘要翻译： 公开了一种蒸发器，其中与CVD材料接触的CVD材料供给部分的至少一部分由耐腐蚀合成树脂构成; 以及包括冷却器和蒸发器的蒸发和供给装置，其中蒸发器的CVD材料供给部分的内部和CVD材料进料部分的蒸发室侧的表面由耐蚀合成树脂 ; 与蒸发器的外部接触的进料部分由金属构成; 并且由冷却器冷却由金属构成并且在加热蒸发室时从加热装置传热的CVD材料进料部分。 蒸发器和设备当用于向用于制造半导体的CVD设备供应气态CVD材料时，使得能够以期望的浓度和流速有效地蒸发和供应CVD材料，而不会在CVD材料上沉积或粘附CVD材料 即使使用固体CVD材料。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20130102131A1

    公开(公告)日：2013-04-25

    申请号：US13610032

    申请日：2012-09-11

    申请人： Hiromu YAMAGUCHI ,  Satoru SUGIYAMA ,  Kazuaki TONARI

    发明人： Hiromu YAMAGUCHI ,  Satoru SUGIYAMA ,  Kazuaki TONARI

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0245 ,  C23C16/0272 ,  C23C16/30 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

    摘要： A method of manufacturing a semiconductor device wherein a film containing Si and Ge is formed on a conducting film over a substrate by using a raw material gas containing Si and a raw material gas containing Ge, includes: forming Si nuclei on the conducting film at a first ratio of a flow rate of the raw material gas containing Ge to a flow rate of the raw material gas containing Si; and forming, on the Si nuclei, a film having Si and Ge at a second ratio of the flow rate of the raw material gas containing Ge to the flow rate of the raw material gas containing Si, the second ratio being greater than the first ratio.

    摘要翻译： 一种半导体器件的制造方法，其中通过使用含有Si的原料气体和含有Ge的原料气体在基板上的导电膜上形成含有Si和Ge的膜，其包括：在导电膜上形成Si核， 含有Ge的原料气体的流量与含有Si的原料气体的流量的第一比率; 并且在所述Si核上形成具有Si和Ge的膜，所述膜以含有Ge的原料气体的流量与含有Si的原料气体的流量成比例的第二比率，所述第二比例大于所述第一比例 。

    Material for forming insulation film and film-forming method with the use of the material
    9.
    发明授权
    Material for forming insulation film and film-forming method with the use of the material 失效
    用于形成绝缘膜的材料和使用该材料的成膜方法

    公开(公告)号：US07195795B2

    公开(公告)日：2007-03-27

    申请号：US10969185

    申请日：2004-10-21

    申请人： Yukichi Takamatsu ,  Takeo Yoneyama ,  Kazuaki Tonari ,  Nobumasa Soejima ,  Koji Kiriyama ,  Takafumi Ishii

    发明人： Yukichi Takamatsu ,  Takeo Yoneyama ,  Kazuaki Tonari ,  Nobumasa Soejima ,  Koji Kiriyama ,  Takafumi Ishii

    IPC分类号： C23C16/40

    CPC分类号： C23C16/401 ,  C09D4/00 ,  C23C18/1204 ,  C08G77/00

    摘要： A material for forming an insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from ether, ketone, ester, alcohol, and hydrocarbon. A material for forming an insulation film comprising a carboxylate of lithium, an organic solvent, and tetramethoxysilane or tetraethoxysilane. A film-forming method for forming an insulation film with the use of the material for forming an insulation film. An insulation film-forming over the various substrates by spin coating method, mist deposition method or CVD method with the use of these material becomes possible and enables to expect providing an insulation film of high quality and high purity containing lithium or lithium silicate.

    摘要翻译： 一种用于形成绝缘膜的材料，其包含锂的醇盐化合物和选自醚，酮，酯，醇和烃的至少一种有机溶剂。 一种用于形成包含锂，有机溶剂和四甲氧基硅烷或四乙氧基硅烷的羧酸盐的绝缘膜的材料。 一种用于使用用于形成绝缘膜的材料形成绝缘膜的成膜方法。 通过使用这些材料，通过旋涂法，雾滴法或CVD法在各种基板上形成绝缘膜成为可能，并且能够期望提供含有锂或硅酸锂的高质量和高纯度的绝缘膜。

    Cleaning process and cleaning agent for harmful gas
    10.
    发明授权
    Cleaning process and cleaning agent for harmful gas 失效
    清洁工艺和有害气体清洗剂

    公开(公告)号：US06638489B2

    公开(公告)日：2003-10-28

    申请号：US09956808

    申请日：2001-09-21

    申请人： Kenji Otsuka ,  Yukichi Takamatsu ,  Youji Nawa ,  Kazuaki Tonari

    发明人： Kenji Otsuka ,  Yukichi Takamatsu ,  Youji Nawa ,  Kazuaki Tonari

    IPC分类号： A62D300

    CPC分类号： B01D53/72

    摘要： There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH—SiR3, CH2CH—Si(OR)3, CH2CHCH2—SiR3 or CH2CHCH2—Si(OR)3, wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

    摘要翻译： 公开了一种清洁有害气体的方法，该方法包括使含有有害成分的有害气体，由通式：CH 2 CH-SiR 3，CH 2 CH-Si（OR）3，CH 2 CHCH 2 -SiR 3或CH 2 CHCH 2 -Si表示的有机硅化合物 （OR）3，其中R表示饱和烃基或芳族化合物基团，与包含活性炭的清洁剂接触，所述活性炭与至少一种选自溴，碘，金属溴化物和金属的物质粘合 碘化物，其中金属以铜，锂，钠，钾，镁，钙，锶，锰，铁，钴，镍，锌，铝和锡为例; 和包含该清洁剂的清洁剂。 清洁处理和清洁剂能够通过使用干洗方法几乎清洁从半导体制造工艺等排出的有害气体。