公开(公告)号：US08703394B2

公开(公告)日：2014-04-22

申请号：US13157363

申请日：2011-06-10

Applicant: Jeong-Oh Kim ,  Jung-Il Lee ,  Kang-Il Kim ,  Jung-Ho Bang ,  Jung-Sun Beak

Inventor： Jeong-Oh Kim ,  Jung-Il Lee ,  Kang-Il Kim ,  Jung-Ho Bang ,  Jung-Sun Beak

IPC: G03F7/26

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  Y10T428/24802

Abstract: The present disclosure is a method for forming a thin film pattern to form a micron-pattern and a flat display device having the same. The method for forming a thin film pattern includes the steps of forming first to third thin film layers on a substrate in succession, forming a first photoresist pattern on the third thin film layer, patterning the second and third thin film layers using the first photoresist pattern as a mask to form first and second thin film mask pattern having line widths different from each other, forming a second photoresist pattern at a region where the first and second thin film mask patterns do not overlap positioned between the first thin film layer and the second thin film mask pattern, removing the first and second thin film mask patterns, and patterning the first thin film layer using the second photoresist pattern as a mask.

Abstract translation: 本公开是形成薄膜图案以形成微米图案的方法和具有该微图案的平板显示装置。 用于形成薄膜图案的方法包括以下步骤：在基板上连续形成第一至第三薄膜层，在第三薄膜层上形成第一光致抗蚀剂图案，使用第一光致抗蚀剂图案图案化第二和第三薄膜层 作为掩模形成具有彼此不同的线宽度的第一和第二薄膜掩模图案，在第一和第二薄膜掩模图案不重叠的区域处形成第二光致抗蚀剂图案，该区域位于第一薄膜层和第二薄膜掩模图案之间 薄膜掩模图案，去除第一和第二薄膜掩模图案，并且使用第二光致抗蚀剂图案作为掩模对第一薄膜层进行图案化。

公开(公告)号：US20110310341A1

公开(公告)日：2011-12-22

申请号：US13166048

申请日：2011-06-22

Applicant: Jeong-Oh KIM ,  Jung-Sun BEAK

Inventor： Jeong-Oh KIM ,  Jung-Sun BEAK

IPC: G02F1/1343 ,  H01L33/42

CPC classification number: G02F1/134336 ,  G02F1/134363 ,  G02F1/1362 ,  G02F1/136277 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/13629 ,  H01L27/1288 ,  H01L29/41733

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract translation: 一种制造用于FFS模式LCD器件的阵列衬底的方法包括在衬底上形成栅极线，栅电极和像素电极; 形成栅极绝缘层; 在所述栅极绝缘层上形成数据线，源极和漏极以及半导体层，所述漏极与所述像素电极重叠; 在数据线上形成钝化层，源极和漏极; 通过图案化所述钝化层和所述栅极绝缘层来形成暴露所述漏电极和所述像素电极的接触孔; 以及在所述钝化层上形成公共电极和连接图案，其中所述公共电极包括条形开口和对应于所述接触孔的孔，并且所述连接图案设置在所述孔中，与所述公共电极间隔开，并且 接触漏电极和像素。

公开(公告)号：US08790941B2

公开(公告)日：2014-07-29

申请号：US13166048

申请日：2011-06-22

Applicant: Jeong-Oh Kim ,  Jung-Sun Beak

Inventor： Jeong-Oh Kim ,  Jung-Sun Beak

IPC: H01L21/44 ,  H01L27/14 ,  G02F1/133

CPC classification number: G02F1/134336 ,  G02F1/134363 ,  G02F1/1362 ,  G02F1/136277 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/13629 ,  H01L27/1288 ,  H01L29/41733

Abstract: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line, a gate electrode and a pixel electrode on a substrate; forming a gate insulating layer; forming a data line, source and drain electrodes, and a semiconductor layer on the gate insulating layer, the drain electrode overlapping the pixel electrode; forming a passivation layer on the data line, the source and drain electrodes; forming a contact hole exposing the drain electrode and the pixel electrode by patterning the passivation layer and the gate insulating layer; and forming a common electrode and a connection pattern on the passivation layer, wherein the common electrode includes bar-shaped openings and a hole corresponding to the contact hole, and the connection pattern is disposed in the hole, is spaced apart from the common electrode and contacts the drain electrode and the pixel.

Abstract translation: 一种制造用于FFS模式LCD器件的阵列衬底的方法包括在衬底上形成栅极线，栅电极和像素电极; 形成栅极绝缘层; 在所述栅极绝缘层上形成数据线，源极和漏极以及半导体层，所述漏极与所述像素电极重叠; 在数据线上形成钝化层，源极和漏极; 通过图案化所述钝化层和所述栅极绝缘层来形成暴露所述漏电极和所述像素电极的接触孔; 以及在所述钝化层上形成公共电极和连接图案，其中所述公共电极包括条形开口和对应于所述接触孔的孔，并且所述连接图案设置在所述孔中，与所述公共电极间隔开，并且 接触漏电极和像素。

公开(公告)号：US08658479B2

公开(公告)日：2014-02-25

申请号：US13549859

申请日：2012-07-16

Applicant: Yong-Il Kim ,  Jeong-Oh Kim ,  Gi-Sang Hong ,  Jung-Sun Beak

Inventor： Yong-Il Kim ,  Jeong-Oh Kim ,  Gi-Sang Hong ,  Jung-Sun Beak

IPC: H01L21/00

CPC classification number: H01L27/124

Abstract: A method of forming a transparent electrode includes forming a first transparent conductive material layer on a base; performing a plasma process on the first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into semitransparent; forming a second transparent conductive material layer on the first transparent conductive material layer; patterning the second transparent conductive material layer and the first transparent conductive material layer; and annealing the patterned second transparent conductive material layer and the patterned first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into transparent.

Abstract translation: 形成透明电极的方法包括在基底上形成第一透明导电材料层; 在所述第一透明导电材料层上进行等离子体处理，使得所述第一透明导电材料层的上部变为半透明的; 在所述第一透明导电材料层上形成第二透明导电材料层; 图案化第二透明导电材料层和第一透明导电材料层; 以及使图案化的第二透明导电材料层和图案化的第一透明导电材料层退火，使得第一透明导电材料层的上部变为透明的。

公开(公告)号：US20130029446A1

公开(公告)日：2013-01-31

申请号：US13549859

申请日：2012-07-16

Applicant: Yong-Il KIM ,  Jeong-Oh KIM ,  Gi-Sang HONG ,  Jung-Sun BEAK

Inventor： Yong-Il KIM ,  Jeong-Oh KIM ,  Gi-Sang HONG ,  Jung-Sun BEAK

IPC: H01L33/42 ,  B44C1/22 ,  B05D5/12

CPC classification number: H01L27/124

Abstract: A method of forming a transparent electrode includes forming a first transparent conductive material layer on a base; performing a plasma process on the first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into semitransparent; forming a second transparent conductive material layer on the first transparent conductive material layer; patterning the second transparent conductive material layer and the first transparent conductive material layer; and annealing the patterned second transparent conductive material layer and the patterned first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into transparent.

Abstract translation: 形成透明电极的方法包括在基底上形成第一透明导电材料层; 在所述第一透明导电材料层上进行等离子体处理，使得所述第一透明导电材料层的上部变为半透明的; 在所述第一透明导电材料层上形成第二透明导电材料层; 图案化第二透明导电材料层和第一透明导电材料层; 以及使图案化的第二透明导电材料层和图案化的第一透明导电材料层退火，使得第一透明导电材料层的上部变为透明的。

公开(公告)号：US20110305882A1

公开(公告)日：2011-12-15

申请号：US13157363

申请日：2011-06-10

Applicant: Jeong-Oh Kim ,  Jung-Il Lee ,  Kang-Il Kim ,  Jung-Ho Bang ,  Jung-Sun Beak

Inventor： Jeong-Oh Kim ,  Jung-Il Lee ,  Kang-Il Kim ,  Jung-Ho Bang ,  Jung-Sun Beak

IPC: B32B3/10 ,  G03F7/20

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  Y10T428/24802

Abstract: The present disclosure is a method for forming a thin film pattern to form a micron-pattern and a flat display device having the same. The method for forming a thin film pattern includes the steps of forming first to third thin film layers on a substrate in succession, forming a first photoresist pattern on the third thin film layer, patterning the second and third thin film layers using the first photoresist pattern as a mask to form first and second thin film mask pattern having line widths different from each other, forming a second photoresist pattern at a region where the first and second thin film mask patterns do not overlap positioned between the first thin film layer and the second thin film mask pattern, removing the first and second thin film mask patterns, and patterning the first thin film layer using the second photoresist pattern as a mask.

Abstract translation: 本公开是形成薄膜图案以形成微米图案的方法和具有该微图案的平板显示装置。 用于形成薄膜图案的方法包括以下步骤：在基板上连续形成第一至第三薄膜层，在第三薄膜层上形成第一光致抗蚀剂图案，使用第一光致抗蚀剂图案图案化第二和第三薄膜层 作为掩模形成具有彼此不同的线宽度的第一和第二薄膜掩模图案，在第一和第二薄膜掩模图案不重叠的区域处形成第二光致抗蚀剂图案，该区域位于第一薄膜层和第二薄膜掩模图案之间 薄膜掩模图案，去除第一和第二薄膜掩模图案，并且使用第二光致抗蚀剂图案作为掩模对第一薄膜层进行图案化。