公开(公告)号：US06387804B1

公开(公告)日：2002-05-14

申请号：US09664714

申请日：2000-09-19

申请人： John C. Foster

发明人： John C. Foster

IPC分类号： H01L2144

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/3105

摘要： Shorting between a transistor gate electrode and associated source/drain regions due to metal silicide formation on the sidewall spacers is prevented by passivating the sidewall spacer surfaces with a mixture of ozone and water. Embodiments of the invention include spraying the wafer with or immersing the wafer in, a saturated solution of ozone in water.

摘要翻译： 通过用臭氧和水的混合物钝化侧壁间隔物表面来防止由于侧壁间隔物上的金属硅化物形成而在晶体管栅电极和相关源/漏区之间的短路。 本发明的实施例包括将晶片喷洒或浸入晶片的饱和的臭氧溶液中。

公开(公告)号：US1231511A

公开(公告)日：1917-06-26

申请号：US11774516

申请日：1916-08-30

申请人： JOHN C FOSTER ,  ELDER JOSEPH H

发明人： ELDER JOSEPH H

IPC分类号： B65D25/26

CPC分类号： B65D59/04

公开(公告)号：US07498222B1

公开(公告)日：2009-03-03

申请号：US11371024

申请日：2006-03-09

申请人： John C. Foster ,  Scott Bell ,  Allison Holbrook ,  Simon S. Chan ,  Phillip Jones

发明人： John C. Foster ,  Scott Bell ,  Allison Holbrook ,  Simon S. Chan ,  Phillip Jones

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L29/513 ,  H01L29/66833

摘要： A high K layer, such as aluminum oxide or hafnium oxide, may be formed with a deposition process that uses an ion implantation to damage portions of the high K material that are to be later etched. More particularly, in one implementation, a semiconductor device is manufactured by forming a first dielectric over a substrate, forming a charge storage element over the first dielectric, forming a second dielectric above the charge storage element, implantation ions into select portions of the second dielectric, and etching the ion implanted select portions of the second dielectric.

摘要翻译： 可以用沉积工艺形成高K层，例如氧化铝或氧化铪，所述沉积工艺使用离子注入来破坏将被蚀刻的高K材料的部分。 更具体地，在一个实施方式中，通过在衬底上形成第一电介质来形成半导体器件，在第一电介质上形成电荷存储元件，在电荷存储元件上形成第二电介质，将离子注入第二电介质的选择部分 并蚀刻第二电介质的离子注入选择部分。

公开(公告)号：US06562718B1

公开(公告)日：2003-05-13

申请号：US09729700

申请日：2000-12-06

申请人： Qi Xiang ,  Ercan Adem ,  Jacques J. Bertrand ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  George J. Kluth ,  Minh V. Ngo ,  Eric N. Paton ,  Christy Mei-Chu Woo

发明人： Qi Xiang ,  Ercan Adem ,  Jacques J. Bertrand ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  George J. Kluth ,  Minh V. Ngo ,  Eric N. Paton ,  Christy Mei-Chu Woo

IPC分类号： H01L2144

CPC分类号： H01L29/66507 ,  H01L21/28097

摘要： A method of forming a fully silicidized gate of a semiconductor device includes forming silicide in active regions and a portion of a gate. A shield layer is blanket deposited over the device. The top surface of the gate electrode is then exposed. A refractory metal layer is deposited and annealing is performed to cause the metal to react with the gate and fully silicidize the gate, with the shield layer protecting the active regions of the device from further silicidization to thereby prevent spiking and current leakage in the active regions.

摘要翻译： 形成半导体器件的完全硅化栅极的方法包括在有源区和门的一部分中形成硅化物。 屏蔽层被覆盖在该器件上。 然后露出栅电极的顶表面。 沉积难熔金属层并进行退火以使金属与栅极反应并使栅极完全硅化，屏蔽层保护器件的有源区不受另外的硅化，从而防止有源区中的峰值和电流泄漏 。

公开(公告)号：US06475874B2

公开(公告)日：2002-11-05

申请号：US09731031

申请日：2000-12-07

申请人： Qi Xiang ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  Eric N. Paton

发明人： Qi Xiang ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  Eric N. Paton

IPC分类号： H01L2120

CPC分类号： H01L21/28194 ,  H01L21/28097 ,  H01L29/495 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

摘要： A method for implementing a self-aligned low temperature metal silicide gate is achieved by confining amorphous silicon within a recess overlying a channel and annealing to cause the amorphous silicon with its overlying low temperature silicidation metal to interact to form the self-aligned low temperature metal silicide gate. A precursor having a temporary gate is used to form the self-aligned low temperature silicide gate. The remaining portions of the low temperature silicidation metal is removed by manipulating the etch selectivity between the low temperature silicidation metal and the self-aligned low temperature metal silicide gate.

摘要翻译： 实现自对准低温金属硅化物栅极的方法是通过将非晶硅限制在覆盖沟道的凹槽中并退火以使非晶硅与其上覆的低温硅化金属相互作用以形成自对准的低温金属来实现的 硅化物门 使用具有临时栅极的前体形成自对准低温硅化物栅极。 通过操纵低温硅化金属和自对准的低温金属硅化物栅极之间的蚀刻选择性来除去低温硅化金属的剩余部分。

公开(公告)号：US06372644B1

公开(公告)日：2002-04-16

申请号：US09789765

申请日：2001-02-22

申请人： John C. Foster ,  Paul L. King

发明人： John C. Foster ,  Paul L. King

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L29/665 ,  H01L29/7833

摘要： Bridging between nickel silicide layers on a gate electrode and associated source/drain regions along silicon nitride sidewall spacers is prevented by hydrogen passivation of the exposed surfaces of the silicon nitride sidewall spacers. Embodiments include treating the silicon nitride sidewall spacers with a solution of HF and H2O, at a HF:H2O volume ratio of about 100:1 to about 200:1 for up to about 60 seconds at room temperature. Hydrogen passivation reduces the number of silicon dangling bonds, thereby avoiding reaction with subsequently deposited nickel and, hence, avoiding the formation of a bridging film of nickel silicide on the sidewall spacers.

摘要翻译： 通过氮化硅侧壁间隔物的暴露表面的氢钝化来防止在栅电极上的硅化镍层和沿着氮化硅侧壁间隔物的相关源极/漏极区之间的桥接。 实施方案包括用HF和H 2 O的溶液以约100:1至约200:1的HF:H2O体积比在室温下处理氮化硅侧壁间隔物达约60秒。 氢钝化减少硅悬挂键的数量，从而避免与随后沉积的镍的反应，并因此避免在侧壁间隔物上形成硅化镍桥接膜。

公开(公告)号：US20130332268A1

公开(公告)日：2013-12-12

申请号：US13910047

申请日：2013-06-04

申请人： John C. Foster

发明人： John C. Foster

IPC分类号： G06Q30/02

CPC分类号： G06Q30/0248

摘要： Methods for selling items over a computer network can include: after a first set of customers has purchased, during a first time period, at least a threshold value or number of items of a first set of items: (a) during a second time period after the first period, offering for sale to the first set of customers an index set of items; (b) throughout the second period, preventing substantially all persons other than the first set of customers from purchasing the index set of items; and (c) during a third time period, offering for sale to a second set of customers, different from the first set of customers, any of the index set of items not sold to the first set of customers during the second period.

摘要翻译： 通过计算机网络销售商品的方法可以包括：在第一组客户在第一时间段内购买至少一个阈值或第一组项目的项目数量：（a）在第二时间段期间 第一期后，向第一套客户出售索引项目; （b）在整个第二期间，除第一组客户之外的所有人员基本上都不能购买指标项目; 和（c）在第三期间内，向第二组客户提供与第一套客户不同的第二套客户的销售，在第二期间内未出售给第一套客户的任何指标集。

公开(公告)号：US06368950B1

公开(公告)日：2002-04-09

申请号：US09734186

申请日：2000-12-12

申请人： Qi Xiang ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  Eric N. Paton

发明人： Qi Xiang ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  Eric N. Paton

IPC分类号： H01L213205

CPC分类号： H01L29/66545 ,  H01L21/28097

摘要： A method for implementing a self-aligned metal silicide gate is achieved by confining amorphous silicon within a recess overlying a channel and annealing to cause the amorphous silicon with its overlying metal to interact to form the self-aligned metal silicide gate. A gate dielectric layer formed of oxynitride or a nitride/oxide stack is formed on the bottom and sidewalls of the recess prior to depositing the silicon. The silicon is removed except for the portion of the silicon in the recess. The remaining portions of the metal are removed by manipulating the etch selectivity between the metal and the self-aligned metal silicide gate.

摘要翻译： 实现自对准金属硅化物栅极的方法是通过将非晶硅限制在覆盖沟道的凹槽中并退火以使非晶硅与其上覆金属相互作用以形成自对准金属硅化物栅极来实现的。 在沉积硅之前，在凹陷的底部和侧壁上形成由氧氮化物或氮化物/氧化物堆叠形成的栅极电介质层。 除了凹部中硅的部分之外，除去硅。 通过操纵金属和自对准金属硅化物栅之间的蚀刻选择性来去除金属的剩余部分。

公开(公告)号：US06342414B1

公开(公告)日：2002-01-29

申请号：US09734189

申请日：2000-12-12

申请人： Qi Xiang ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  Eric N. Paton

发明人： Qi Xiang ,  Paul R. Besser ,  Matthew S. Buynoski ,  John C. Foster ,  Paul L. King ,  Eric N. Paton

IPC分类号： H01L218238

CPC分类号： H01L21/28194 ,  H01L21/28097 ,  H01L21/28114 ,  H01L29/495 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545

摘要： A method for implementing a self-aligned low temperature metal silicide gate is achieved by confining a low temperature silicidation metal within a recess overlying a channel and annealing to cause the low temperature silicidation metal and its overlying silicon to interact to form the self-aligned low temperature metal silicide gate. A planarization step is performed to remove the remaining unreacted silicon by chemical mechanical polishing until no silicon is detected.

摘要翻译： 实现自对准低温金属硅化物栅极的方法是通过将低温硅化金属限制在覆盖沟道的凹槽内并进行退火以使低温硅化金属及其上覆的硅相互作用以形成自对准低 温度金属硅化物门。 进行平面化步骤以通过化学机械抛光除去剩余的未反应的硅，直到没有检测到硅。

公开(公告)号：US4938535A

公开(公告)日：1990-07-03

申请号：US366074

申请日：1989-06-14

申请人： Dolores Condon ,  Theresa A. Foster ,  John C. Foster

发明人： Dolores Condon ,  Theresa A. Foster ,  John C. Foster

IPC分类号： B60R22/02

CPC分类号： B60R22/024 ,  Y10S297/06 ,  Y10T24/2708

摘要： An adjustable shoulder/lap seat belt adapter in the form of an elongated strap, has fixably mounted on one face thereof a central strip of one of a hook-and-loop type fastener material tape intermediate the ends of the elongated strap. Short length strips of the other of hook-and-loop type fastener tape are affixed to opposite ends of the elongated strap on the same face. Closed loops are formed at the end of the elongated strap about a shoulder strap and a lap strap of a shoulder/lap seat belt securing an occupant to an automotive motor vehicle seat, preventing ride up of the shoulder strap on the torso of the seat occupant, misuse of the shoulder strap, and eliminating the need for constant repetitive readjusting of the shoulder strap position. A swivel-mounted snap clamp affixed to the one face of the adapter elongated strap, clamps to the edge of the shoulder strap with a swivel axis oriented approximately 65.degree. to the center line of the elongated strap.

摘要翻译： 呈细长带形式的可调整的肩/肩安全带适配器在其一个表面上可固定地安装在细长带的末端之间的钩环类紧固件材料带之一的中心条。 钩环式拉链带中的另一个的短长度条带固定在同一面上细长带的相对端。 闭合环在细长带的端部周围形成肩带和将乘员固定在汽车机动车辆座椅上的肩部/膝部座椅安全带的搭接带，防止座椅乘员身上的肩带上的骑行 ，不利于肩带，并且不需要对肩带位置进行不断重复的重新调整。 固定在适配器细长带的一个面上的旋转安装的卡扣夹紧件夹紧到肩带的边缘，旋转轴线相对于细长带的中心线约65°。