摘要:
The invention relates to an adder for adding at least four bits of the same significance w, said adder having a first number of inputs for receiving the bits of the same significance w that are to be added and a number of outputs, the bits to be added being applied to the inputs in presorted form, and the adder adding the bits while taking account of the presorting. The invention also provides an adding device for adding at least four bits of equal significance and a corresponding method.
摘要:
A carry-ripple adder having inputs for supplying three input bits of equal significance 2n that are to be summed and two carry bits of equal significance 2n+1 that are also to be summed. A calculated sum bit of significance 2n and two calculated carry bits of equal significance 2n+1 which are higher than the significance 2n of the sum bit are provided at outputs. A final carry-ripple stage VMA may be used even after a reduction to three bits.
摘要翻译:具有输入的输入纹波加法器,其具有用于提供要求和的三个等号有效值的输入比特和两个相等重要性的两个进位比特2 n + 1,也是 被总结。 计算出的有效值的和位2< n>和两个具有相同重要性的计算的进位位2< n + 1< / 2>其高于 在输出端提供和位。 即使在减少到三位之后,也可以使用最终的进位纹波级VMA。
摘要:
One embodiment provides a content addressable memory cell having a first memory cell which is electrically connected to a comparator unit. The comparator unit is constructed from at least eight transistors, at least four transistors being arranged in a first circuit part and at least four transistors being arranged in a second circuit part and each of the circuit parts having at least two circuit branches.
摘要:
A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.
摘要:
A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.
摘要:
The invention relates to an adder for adding at least four bits of the same significance w, said adder having a first number of inputs for receiving the bits of the same significance w that are to be added and a number of outputs, the bits to be added being applied to the inputs in presorted form, and the adder adding the bits while taking account of the presorting. The invention also provides an adding device for adding at least four bits of equal significance and a corresponding method.
摘要:
A carry-ripple adder has four summing inputs for receiving four input bits having the significance w that are to be summed, three carry inputs for receiving three input carry bits having the significance w, a summation output for outputting an output summation bit having the significance w, and three carry outputs for outputting three output carry bits having the significance 2 w.
摘要:
A method for optimizing the layout of cells of an integrated circuit includes providing a cell-based network list with references to cell definitions with parameterizable dimensions, calculating a layout of an integrated circuit using the cell-based network list, extracting a primary network list from the layout, optimizing the component dimensions of at least some of the components of the integrated circuit using at least one predetermined optimization parameter and a simulation using the primary network list, creating an optimized secondary network list using the results of the component optimization, and automatically modifying the layout with respect to cell dimensions using a secondary network list.
摘要:
Rather than merely carrying out a BIST test by verifying whether a memory cell accurately stores a “1” or “0” under normal read/write conditions, aspects of the present discloser relate to BIST tests that test the read and/or write margins of a cell. During this BIST testing, the read and/or write margins can be incrementally stressed until a failure point is determined for the cell. In this way, “weak” memory cells in an array can be identified and appropriate action can be taken, if necessary, to deal with these weak cells.
摘要:
Some embodiments of the present disclosure relate to improved reliability verification techniques for semiconductor memories. Rather than merely carrying out a BIST test by verifying whether a memory cell accurately stores a “1” or “0” under normal read/write conditions, aspects of the present invention relate to BIST tests that test the read and/or write margins of a cell. During this BIST testing, the read and/or write margins can be incrementally stressed until a failure point is determined for the cell. In this way, “weak” memory cells in an array can be identified and appropriate action can be taken, if necessary, to deal with these weak cells.