公开(公告)号：US09899402B2

公开(公告)日：2018-02-20

申请号：US15412128

申请日：2017-01-23

Applicant: IMSolution Co., Ltd. ,  Yukihiro Nagai ,  Riichiro Shirota ,  Hiroshi Watanabe

Inventor： Te-Chang Tseng ,  Yukihiro Nagai ,  Riichiro Shirota ,  Hiroshi Watanabe

IPC: G11C16/04 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/423 ,  H01L29/51 ,  H01L29/16 ,  H01L27/11582 ,  H01L29/49 ,  G11C5/06

CPC classification number: H01L27/11568 ,  G11C5/063 ,  G11C16/0433 ,  G11C16/0466 ,  H01L27/11573 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/16 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

Abstract: A cheap and high performance 1.5 transistor-type flash memory highly compatible externally of a memory region has a sacrifice film formed on a substrate. A U-shaped groove is formed on the sacrifice film, where multiple insulating films are laminated. The multiple insulating films includes a silicon nitride film as a charge storage layer. Low resistive material is disposed on the multiple insulating films to form a control gate. The select gate is formed on the insulating film on a side of the control gate in a self-aligned manner. Semiconductor regions opposite in conductivity to the substrate on both sides of the adjoining control gate and the select gate form a source and a drain, respectively. Thus, a 1.5 transistor-type flash memory is formed with the adjoining control gate and the select gate between the source and the drain. In a MOS-type transistor with the control gate, the threshold voltage is changeable according to injection/emission of the charge to the silicon nitride as the charge storage layer, and thus work as a non-volatile memory.

公开(公告)号：US20170221916A1

公开(公告)日：2017-08-03

申请号：US15412128

申请日：2017-01-23

Applicant: Yukihiro Nagai ,  Riichiro Shirota ,  Hiroshi Watanabe ,  IMSolution Co., Ltd.

Inventor： Te-Chang Tseng ,  Yukihiro Nagai ,  Riichiro Shirota ,  Hiroshi Watanabe

IPC: H01L27/11568 ,  H01L29/423 ,  H01L29/51 ,  G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  H01L29/16 ,  H01L27/11573 ,  G11C16/10

CPC classification number: H01L27/11568 ,  G11C5/063 ,  G11C16/0433 ,  G11C16/0466 ,  H01L27/11573 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/16 ,  H01L29/42344 ,  H01L29/42348 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

Abstract: A cheap and high performance 1.5 transistor-type flash memory highly compatible to external of memory region is provided. The flash memory has sacrifice film formed on substrate. U-shaped groove is formed on sacrifice film, where multiple insulating film is laminated. Multiple insulating film includes silicon nitride film as charge storage layer. Low resistive material is disposed on multiple insulating film to form control gate. Select gate is formed on insulating film on side of control gate in self-aligned manner. Semiconductor regions opposite in conductivity to substrate on both sides of adjoining control gate and select gate to form source and drain, respectively. Thus, a 1.5 transistor-type flash memory is formed with adjoining control gate and select gate between source and drain. In MOS-type transistor with control gate, threshold voltage is changeable according to injection/emission of charge to silicon nitride as charge storage layer, and thus work as non-volatile memory.