知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.014 seconds)

    Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
    2.
    发明授权
    Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen 失效
    具有电容器电介质层的电容器包括具有与氧结合的多种不同金属的金属氧化物

    公开(公告)号：US06943392B2

    公开(公告)日：2005-09-13

    申请号：US09388063

    申请日：1999-08-30

    Applicant: Vishnu K. Agarwal ,  Husam N. Al-Shareef

    Inventor： Vishnu K. Agarwal ,  Husam N. Al-Shareef

    IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC classification number: H01L28/56 ,  H01L21/31691 ,  H01L28/55

    Abstract: The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of metal oxide having multiple different metals bonded with oxygen. The layer has varying stoichiometry across its thickness. The layer includes an inner region, a middle region, and an outer region. The middle region has a different stoichiometry than both the inner and outer regions.

    Abstract translation: 本发明包括具有电容器电介质层的电容器，该电容器电介质层包含具有与氧结合的多个不同金属的 在一个实施例中，电容器包括第一和第二导电电极，其间位于其间的高k电容器介电区。 高k电容器电介质区域包括具有多个与氧结合的不同金属的金属氧化物层。 该层在其厚度上具有不同的化学计量。 该层包括内部区域，中间区域和外部区域。 中间区域具有与内部和外部区域不同的化学计量。

    Method and apparatus for stabilizing high pressure oxidation of a semiconductor device
    4.
    发明授权
    Method and apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的方法和装置

    公开(公告)号：US06291364B1

    公开(公告)日：2001-09-18

    申请号：US09386941

    申请日：1999-08-31

    Applicant: F. Daniel Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

    Inventor： F. Daniel Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

    IPC: H01L2631

    CPC classification number: H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

    Abstract: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    Abstract translation: 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于5气压至25气氛N2O和600至750℃温度范围的环境中，这是导致N2O超临界的条件。 通过防止N2O变得超临界，可以控制反应，防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

    Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
    5.
    发明授权
    Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers 失效
    包括制造电容器和DRAM单元的高K含氧电介质层的形成方法

    公开(公告)号：US6162744A

    公开(公告)日：2000-12-19

    申请号：US33064

    申请日：1998-02-28

    Applicant: Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  Randhir P. S. Thakur

    Inventor： Husam N. Al-Shareef ,  Scott Jeffrey DeBoer ,  Randhir P. S. Thakur

    IPC: H01L21/02 ,  H01L21/316 ,  H01L21/31 ,  H01L21/20 ,  H01L21/469

    CPC classification number: H01L28/40 ,  H01L21/31604 ,  H01L21/31691

    Abstract: In a capacitor forming method, a first capacitor electrode is formed over a substrate. A high K oxygen containing capacitor dielectric layer is formed over the first capacitor electrode. A first annealing of the high K capacitor dielectric layer is conducted at a temperature of at least about 500.degree. C. in a substantially non-oxidizing atmosphere. After the first annealing, second annealing the high K capacitor dielectric layer occurs at a temperature of less than or equal to about 500.degree. C. in an oxidizing atmosphere. A second capacitor electrode is formed over the high K oxygen containing capacitor dielectric layer, preferably after the second annealing. In another considered implementation, the capacitor dielectric layer is annealed in multiple steps including at least two different temperatures. A second capacitor electrode is formed over the high K oxygen containing dielectric layer, with the substrate not being exposed to a gaseous oxygen containing atmosphere at a temperature of greater than about 500.degree. C. between the capacitor dielectric layer formation and formation of the second capacitor electrode. The invention also contemplates dielectric layer processing apart from capacitor formation, and the fabrication of DRAM circuitry.

    Abstract translation: 在电容器形成方法中，在基板上形成第一电容电极。 在第一电容器电极上形成高K含氧电容器电介质层。 高K电容介电层的第一退火在基本上非氧化性气氛中在至少约500℃的温度下进行。 在第一退火之后，在高K电容介电层的第二次退火在氧化气氛中在小于或等于约500℃的温度下发生。 优选在第二退火之后，在高K含氧电容器电介质层上形成第二电容器电极。 在另一个考虑的实施方案中，电容器介电层在包括至少两个不同温度的多个步骤中退火。 在高K含氧介电层上形成第二电容器电极，在电容器介电层形成和形成第二电容器之间，基板不暴露于大于约500℃的气态含氧气氛 电极。 本发明还考虑除电容器形成之外的介电层处理以及DRAM电路的制造。

    Method of processing internal surfaces of a chemical vapor deposition reactor
    6.
    发明授权
    Method of processing internal surfaces of a chemical vapor deposition reactor 失效

    公开(公告)号：US6082375A

    公开(公告)日：2000-07-04

    申请号：US83258

    申请日：1998-05-21

    Applicant: F. Daniel Gealy ,  Husam N. Al-Shareef ,  Scott Jeffrey DeBoer

    Inventor： F. Daniel Gealy ,  Husam N. Al-Shareef ,  Scott Jeffrey DeBoer

    IPC: C23C16/44 ,  C25F3/12

    CPC classification number: C23C16/4405 ,  Y10S438/905 ,  Y10S438/911

    Abstract: The invention encompasses methods of processing internal surfaces of a chemical vapor deposition reactor. In one implementation, material is deposited over internal surfaces of a chemical vapor deposition reactor while processing semiconductor substrates therein. The deposited material is treated with atomic oxygen. After the treating, at least some of the deposited material is etched from the reactor internal surfaces. In one embodiment, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, remaining deposited material is treated with atomic oxygen. After the treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces. In one embodiment, the deposited material is first treated with atomic oxygen. After the first treating, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, second treating is conducted of remaining deposited material with atomic oxygen. After the second treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces.

    Method of processing a transistor gate dielectric film with stem
    7.
    发明授权
    Method of processing a transistor gate dielectric film with stem 失效
    用杆处理晶体管栅极介电膜的方法

    公开(公告)号：US07064052B2

    公开(公告)日：2006-06-20

    申请号：US10133390

    申请日：2002-04-29

    Applicant: Ronald A. Weimer ,  Scott J. DeBoer ,  Dan Gealy ,  Husam N. Al-Shareef

    Inventor： Ronald A. Weimer ,  Scott J. DeBoer ,  Dan Gealy ,  Husam N. Al-Shareef

    IPC: H01L21/3205

    CPC classification number: H01L21/3105 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  Y10S438/901

    Abstract: A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be used, for example, in the formation of various elements in an integrated circuit, including gate dielectric films as well as capacitive elements. The tight temperature control provided by the RTP process allows the wet oxidation to be performed quickly so that the oxidizing species does not diffuse significantly through the dielectric film and diffuse into an underlying layer. In the case of capacitive elements, the technique also can help reduce the leakage current of the dielectric film without significantly reducing its capacitance.

    Abstract translation: 制造半导体器件的方法包括沉积电介质膜并使电介质膜在快速热处理室中进行湿氧化。 该技术可以用于例如在集成电路中形成各种元件，包括栅介质膜以及电容元件。 通过RTP工艺提供的紧密温度控制允许快速进行湿氧化，使得氧化物质不会通过电介质膜显着扩散并扩散到下层。 在电容元件的情况下，该技术还可以有助于降低电介质膜的漏电流，而不会显着降低其电容。

    Method of processing internal surfaces of a chemical vapor deposition reactor
    10.
    发明授权
    Method of processing internal surfaces of a chemical vapor deposition reactor 失效
    处理化学气相沉积反应器内表面的方法

    公开(公告)号：US06610211B1

    公开(公告)日：2003-08-26

    申请号：US09516422

    申请日：2000-03-01

    Applicant: F. Daniel Gealy ,  Husam N. Al-Shareef ,  Scott Jeffrey DeBoer

    Inventor： F. Daniel Gealy ,  Husam N. Al-Shareef ,  Scott Jeffrey DeBoer

    IPC: B08B940

    CPC classification number: C23C16/4405 ,  Y10S438/905 ,  Y10S438/911

    Abstract: The invention encompasses methods of processing internal surfaces of a chemical vapor deposition reactor. In one implementation, material is deposited over internal surfaces of a chemical vapor deposition reactor while processing semiconductor substrates therein. The deposited material is treated with atomic oxygen. After the treating, at least some of the deposited material is etched from the reactor internal surfaces. In one embodiment, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, remaining deposited material is treated with atomic oxygen. After the treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces. In one embodiment, the deposited material is first treated with atomic oxygen. After the first treating, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, second treating is conducted of remaining deposited material with atomic oxygen. After the second treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces.

    Abstract translation: 本发明包括处理化学气相沉积反应器的内表面的方法。 在一个实施方式中，材料沉积在化学气相沉积反应器的内表面上，同时在其中处理半导体衬底。 沉积的材料用原子氧处理。 在处理之后，从反应器内表面蚀刻至少一些沉积的材料。 在一个实施例中，从反应器内表面进行一些沉积材料的第一蚀刻。 在第一蚀刻之后，用原子氧处理剩余的沉积材料。 在处理之后，对来自反应器内表面的至少一些剩余的沉积材料进行第二蚀刻。 在一个实施例中，首先用原子氧处理沉积的材料。 在第一次处理之后，从反应器内表面进行一些沉积材料的第一蚀刻。 在第一蚀刻之后，用原子氧进行剩余的沉积材料的第二次处理。 在第二次处理之后，从反应器内表面进行至少一些剩余的沉积材料的第二蚀刻。

Patent Agency Ranking