Invention Grant
- Patent Title: Method for stabilizing high pressure oxidation of a semiconductor device
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Application No.: US10624817Application Date: 2003-07-22
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Publication No.: US06955996B2Publication Date: 2005-10-18
- Inventor: Daniel F Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
- Applicant: Daniel F Gealy , Dave Chapek , Scott DeBoer , Husam N. Al-Shareef , Randhir Thakur
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: C30B33/00
- IPC: C30B33/00 ; H01L21/316 ; H01L21/31 ; H01L21/469

Abstract:
A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
Public/Granted literature
- US20040185677A1 Method for stabilizing high pressure oxidation of a semiconductor device Public/Granted day:2004-09-23
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