公开(公告)号：US20050059191A1

公开(公告)日：2005-03-17

申请号：US10605232

申请日：2003-09-17

申请人： Hui-Chu Lin

发明人： Hui-Chu Lin

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L27/1248 ,  H01L29/66765

摘要： First, a substrate with a polysilicon film is provided. Then, a gate insulating layer and a gate are formed on the polysilicon film in sequence. An ion implantation process is performed to form a source and a drain around the gate. After that, a first plasma enhanced chemical vapor deposition (PECVD) process is performed to form a silicon nitride layer over the substrate and the gate. A second plasma enhanced chemical vapor deposition process is then performed to form a TEOS based silicon oxide layer on the silicon nitride layer. A photo-etching process follows to form a contact hole extending through to the source and drain respectively. Then, a conductive layer is filled into the contact holes and electrically connected to the source and drain.

公开(公告)号：US06926932B2

公开(公告)日：2005-08-09

申请号：US10448877

申请日：2003-05-30

申请人： Hui-Chu Lin

发明人： Hui-Chu Lin

IPC分类号： H01L21/316 ,  C23C16/24 ,  C23C16/56 ,  H01L21/336 ,  H01L29/786 ,  H05H1/00

CPC分类号： C23C16/56 ,  C23C16/24

摘要： A method for forming a silicon oxide layer in the production of the polysilicon film transistor is disclosed. A plasma surface treatment is performed over a substrate after an amorphous silicon layer has been formed on the substrate by PECVD to transform a portion of the amorphous silicon layer into a superficial oxide layer.

摘要翻译： 公开了在制造多晶硅晶体管时形成氧化硅层的方法。 在通过PECVD在衬底上形成非晶硅层之后，在衬底上进行等离子体表面处理，以将非晶硅层的一部分转变成表面氧化物层。

公开(公告)号：US06869834B2

公开(公告)日：2005-03-22

申请号：US10248770

申请日：2003-02-16

申请人： Hui-Chu Lin

发明人： Hui-Chu Lin

IPC分类号： H01L21/02 ,  H01L21/336 ,  H01L29/49 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L28/20 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765

摘要： The present invention provides a method of forming a low temperature polysilicon thin film transistor (LTPS TFT). A polysilicon layer including a channel region is formed first. A first and a second plasma enhanced chemical vapor deposition processes are sequentially performed to form a composite gate insulating layer composed of a TEOS-based silicon oxide layer and a silicon nitride layer on the channel region. Finally a gate electrode and a source/drain of the low temperature polysilicon thin film transistor are formed.

摘要翻译： 本发明提供一种形成低温多晶硅薄膜晶体管（LTPS TFT）的方法。 首先形成包括沟道区的多晶硅层。 依次执行第一和第二等离子体增强化学气相沉积工艺，以在沟道区上形成由TEOS基氧化硅层和氮化硅层组成的复合栅极绝缘层。 最后形成低温多晶硅薄膜晶体管的栅电极和源极/漏极。

公开(公告)号：US20050059192A1

公开(公告)日：2005-03-17

申请号：US10605233

申请日：2003-09-17

申请人： Hui-Chu Lin

发明人： Hui-Chu Lin

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L29/66765 ,  H01L27/1248 ,  H01L29/66757

摘要： First, a substrate with a polysilicon film is provided. Then, a gate insulating layer and a gate are formed on the polysilicon film in sequence. An ion implantation process is performed to form a source and a drain around the gate. After that, a first plasma enhanced chemical vapor deposition (PECVD) process is performed to form a silicon nitride layer over the substrate and the gate. A second plasma enhanced chemical vapor deposition process is then performed to form a TEOS based silicon oxide layer on the silicon nitride layer. A photo-etching process follows to form a contact hole extending through to the source and drain respectively. Then, a conductive layer is filled into the contact holes and electrically connected to the source and drain.

摘要翻译： 首先，提供具有多晶硅膜的基板。 然后，依次在多晶硅膜上形成栅极绝缘层和栅极。 执行离子注入工艺以在栅极周围形成源极和漏极。 之后，执行第一等离子体增强化学气相沉积（PECVD）工艺以在衬底和栅极上形成氮化硅层。 然后执行第二等离子体增强化学气相沉积工艺以在氮化硅层上形成TEOS基氧化硅层。 接下来进行光蚀刻工艺以形成分别延伸通过源极和漏极的接触孔。 然后，将导电层填充到接触孔中并电连接到源极和漏极。

公开(公告)号：US08497150B2

公开(公告)日：2013-07-30

申请号：US12569024

申请日：2009-09-29

申请人： Yung-Yuan Chang ,  Hui-Chu Lin

发明人： Yung-Yuan Chang ,  Hui-Chu Lin

IPC分类号： H01L21/00

CPC分类号： H01L31/186 ,  H01L31/046 ,  H02S50/00 ,  H02S50/10 ,  Y02E10/50 ,  Y02P70/521

摘要： This invention discloses a defect isolation method for thin-film solar cell having at least a defect therein. The thin-film solar cell comprises a substrate, a front electrode layer, an absorber layer and a back electrode layer stacked in such a sequence. The defect isolation method includes the steps of: detecting at least a defect formed in thin-film solar cell and acquiring the positions of the defects, and applying a laser light to scribe the outer circumference of the defects according to the positions of the defects so as to form at least an isolation groove having a closed-curve configuration.

摘要翻译： 本发明公开了一种至少具有缺陷的薄膜太阳能电池的缺陷隔离方法。 薄膜太阳能电池包括以这样的顺序层叠的基板，前电极层，吸收体层和背面电极层。 缺陷隔离方法包括以下步骤：至少检测薄膜太阳能电池中形成的缺陷并获取缺陷的位置，并根据缺陷的位置施加激光来刻划缺陷的外周。 至少形成具有闭合曲线构造的隔离槽。

公开(公告)号：US20100087025A1

公开(公告)日：2010-04-08

申请号：US12569024

申请日：2009-09-29

申请人： Yung-Yuan Chang ,  Hui-Chu Lin

发明人： Yung-Yuan Chang ,  Hui-Chu Lin

IPC分类号： H01L31/18

CPC分类号： H01L31/186 ,  H01L31/046 ,  H02S50/00 ,  H02S50/10 ,  Y02E10/50 ,  Y02P70/521

摘要： This invention discloses a defect isolation method for thin-film solar cell having at least a defect therein. The thin-film solar cell comprises a substrate, a front electrode layer, an absorber layer and a back electrode layer stacked in such a sequence. The defect isolation method includes the steps of: detecting at least a defect formed in thin-film solar cell and acquiring the positions of the defects, and applying a laser light to scribe the outer circumference of the defects according to the positions of the defects so as to form at least an isolation groove having a closed-curve configuration.

摘要翻译： 本发明公开了一种至少具有缺陷的薄膜太阳能电池的缺陷隔离方法。 薄膜太阳能电池包括以这样的顺序层叠的基板，前电极层，吸收体层和背面电极层。 缺陷隔离方法包括以下步骤：至少检测薄膜太阳能电池中形成的缺陷并获取缺陷的位置，并根据缺陷的位置施加激光来刻划缺陷的外周。 至少形成具有闭合曲线构造的隔离槽。

公开(公告)号：US20050025906A1

公开(公告)日：2005-02-03

申请号：US10631134

申请日：2003-07-31

申请人： Hui-Chu Lin ,  Wen-Cheng Lu

发明人： Hui-Chu Lin ,  Wen-Cheng Lu

IPC分类号： C23C16/44 ,  H05H1/24

CPC分类号： H01J37/32862 ,  C23C16/4404 ,  C23C16/4405

摘要： A method for improving uniformity of a film in a plasma enhanced chemical vapor deposition system in a deposition chamber includes the following steps before a deposition procedure. Firstly, a cleaning procedure is performed to remove particles adhered onto an internal wall of the deposition chamber. Then, a pre-deposition procedure is performed to isolate contaminants generated during the clearing procedure. Afterward, a specified gas is introduced into the deposition chamber so as to stabilize a condition inside the deposition chamber.

摘要翻译： 一种用于改善沉积室中的等离子体增强化学气相沉积系统中膜的均匀性的方法包括在沉积程序之前的以下步骤。 首先，执行清洁程序以去除附着在沉积室的内壁上的颗粒。 然后，执行预沉积程序以分离清除过程中产生的污染物。 之后，将特定气体引入沉积室，以稳定沉积室内部的状态。

公开(公告)号：US20110036393A1

公开(公告)日：2011-02-17

申请号：US12856265

申请日：2010-08-13

申请人： Chia-Yu Chen ,  Hui-Chu Lin ,  Chien-Chung Bi

发明人： Chia-Yu Chen ,  Hui-Chu Lin ,  Chien-Chung Bi

IPC分类号： H01L31/0288 ,  H01L31/00 ,  H01L31/0376 ,  H01L31/036 ,  H01L31/18

CPC分类号： H01L31/0465 ,  H01L31/046 ,  Y02E10/50

摘要： The present invention discloses a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A first current output region formed at the positive electrode of the thin film solar cell module. A first current output element is disposed in the first current output region, and the absorber layer further comprises at least a first gap which is disposed in the first current output region to increase the contact between the first electrode layer and the second electrode layer. The useless current, the resistance and the heat generated there are reduced. The heat generated there is also reduced.

摘要翻译： 本发明公开了一种薄膜太阳能电池组件及其制造方法。 薄膜太阳能电池从底部到顶部包括第一基板，第一电极，吸收体层和第二电极层。 形成在薄膜太阳能电池模块的正极的第一电流输出区域。 第一电流输出元件设置在第一电流输出区域中，并且吸收体层还包括设置在第一电流输出区域中的至少第一间隙，以增加第一电极层和第二电极层之间的接触。 无用的电流，电阻和产生的热量都减少了。 在那里产生的热也减少了。

公开(公告)号：US20100084015A1

公开(公告)日：2010-04-08

申请号：US12567987

申请日：2009-09-28

申请人： Yung-Yuan CHANG ,  Hui-Chu Lin

发明人： Yung-Yuan CHANG ,  Hui-Chu Lin

IPC分类号： H01L31/00

CPC分类号： H01L31/046 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  Y02E10/50

摘要： This invention discloses a thin-film solar cell, provided with a plurality of unit cells, comprising a substrate, a front electrode layer, an absorber layer and a back electrode layer stacked in such a sequence. The thin-film solar cell further includes at least a defect formed at least in the back electrode layer, and the defect has at least an isolation groove of a closed curve formed around the defect.

摘要翻译： 本发明公开了一种具有多个单电池的薄膜太阳能电池，其包括以这种顺序堆叠的基板，前电极层，吸收层和背电极层。 薄膜太阳能电池还至少包括形成在所述背面电极层中的缺陷，并且所述缺陷至少具有围绕所述缺陷形成的闭合曲线的隔离槽。