知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

65 条记录 (耗时 0.029 秒)

    Lamp Device
    2.
    发明申请
    Lamp Device 审中-公开
    灯装置

    公开(公告)号：US20120313551A1

    公开(公告)日：2012-12-13

    申请号：US13423573

    申请日：2012-03-19

    申请人： Hiromichi NAKAJIMA ,  Yuichiro TAKAHARA ,  Hiroshi MATSUSHITA ,  Masahiro TODA ,  Shigeru OSAWA ,  Ryotaro MATSUDA ,  Jun SASAKI ,  Takeshi OSADA

    发明人： Hiromichi NAKAJIMA ,  Yuichiro TAKAHARA ,  Hiroshi MATSUSHITA ,  Masahiro TODA ,  Shigeru OSAWA ,  Ryotaro MATSUDA ,  Jun SASAKI ,  Takeshi OSADA

    IPC分类号： H05B37/02

    CPC分类号： F21V23/006 ,  F21K9/20 ,  F21S8/02 ,  F21Y2115/10

    摘要： According to one embodiment, a lamp device includes a housing including a cap, a light-emitting module arranged in the housing and a lighting circuit. The light-emitting module includes a module board, and a semiconductor light-emitting element mounted on the module board. The lighting circuit includes a circuit board, plural circuit components mounted on the circuit board, and a first thermosensor and a second thermosensor arranged at different positions on the circuit board where a temperature difference occurs at time of lighting. The lighting circuit controls lighting of the semiconductor light-emitting element according to the temperature difference between the first thermosensor and the second thermosensor.

    摘要翻译： 根据一个实施例，灯装置包括壳体，其包括帽，布置在壳体中的发光模块和点灯电路。 发光模块包括模块板和安装在模块板上的半导体发光元件。 照明电路包括电路板，安装在电路板上的多个电路部件，以及布置在电路板上在发光时出现温差的不同位置处的第一热敏传感器和第二热敏传感器。 照明电路根据第一热敏传感器和第二热敏传感器之间的温度差来控制半导体发光元件的点亮。

    CONTROL METHOD AND CONTROL SYSTEM FOR EXPOSURE APPARATUS
    3.
    发明申请
    CONTROL METHOD AND CONTROL SYSTEM FOR EXPOSURE APPARATUS 有权
    曝光装置的控制方法和控制系统

    公开(公告)号：US20120028192A1

    公开(公告)日：2012-02-02

    申请号：US13194322

    申请日：2011-07-29

    申请人： Kenichi TSUJISAWA ,  Hiroshi Matsushita ,  Takayoshi Otake ,  Hideyuki Oishi ,  Akira Ogawa ,  Koji Washiyama

    发明人： Kenichi TSUJISAWA ,  Hiroshi Matsushita ,  Takayoshi Otake ,  Hideyuki Oishi ,  Akira Ogawa ,  Koji Washiyama

    IPC分类号： H01L21/02 ,  G03B27/42

    CPC分类号： G03F9/7007 ,  G03F7/70533

    摘要： According to one embodiment, a control method for an exposure apparatus is disclosed. The method can include retrieving, from a database, a correction amount of alignment correction at a time of exposure of a wafer and an inclination amount of a wafer stage with respect to an optical axis of an exposure optical system at the time of exposure. The method can include making a determination on the inclination amount based on a predetermined condition. The method can include making a determination on the correction amount based on the predetermined condition. In addition, the method can include issuing an alarm when the inclination amount and the correction amount both satisfy the condition.

    摘要翻译： 根据一个实施例，公开了一种用于曝光装置的控制方法。 该方法可以包括在曝光时从数据库检索在晶片曝光时相对于曝光光学系统的光轴的晶片台的倾斜量的校准量。 该方法可以包括基于预定条件来确定倾斜量。 该方法可以包括基于预定条件来确定校正量。 此外，该方法可以包括当倾斜量和校正量都满足条件时发出报警。

    Linear pattern detection method and apparatus
    4.
    发明授权
    Linear pattern detection method and apparatus 有权
    线性图案检测方法和装置

    公开(公告)号：US08081814B2

    公开(公告)日：2011-12-20

    申请号：US12393797

    申请日：2009-02-26

    申请人： Hiroshi Matsushita ,  Kenichi Kadota ,  Toshiyuki Aritake

    发明人： Hiroshi Matsushita ,  Kenichi Kadota ,  Toshiyuki Aritake

    IPC分类号： G06K9/00 ,  G01N21/00

    CPC分类号： G06K9/4604 ,  G06T7/0004 ,  G06T2207/20021 ,  G06T2207/30148

    摘要： The present invention provides a linear pattern detection method which can extract and detect linear patterns distinguished by a microscopic defect distribution profile even if skipped measurements are taken. The linear pattern detection method acquires a defect map created based on results of defect inspection of a wafer; divides the defect map into a plurality of first segments; calculates a correlation coefficient of a point sequence in each of the first segments, the point sequence corresponding to a defect group contained in the first segments; calculates a total number of those first segments in which the correlation coefficient is equal to or larger than a first threshold; and determines that the wafer contains a linear pattern if the total number is equal to or larger than a second threshold.

    摘要翻译： 本发明提供一种线性图案检测方法，其可以提取和检测由微观缺陷分布轮廓区分的线性图案，即使进行了跳过的测量。 线性图案检测方法获取基于晶片的缺陷检查结果创建的缺陷图; 将缺陷图划分成多个第一段; 计算每个第一段中的点序列的相关系数，对应于包含在第一段中的缺陷组的点序列; 计算相关系数等于或大于第一阈值的那些第一段的总数; 并且如果总数等于或大于第二阈值，则确定晶片包含线性模式。

    FAILURE CAUSE IDENTIFYING DEVICE AND METHOD FOR IDENTIFYING FAILURE CAUSE
    6.
    发明申请
    FAILURE CAUSE IDENTIFYING DEVICE AND METHOD FOR IDENTIFYING FAILURE CAUSE 审中-公开
    故障原因识别设备和识别故障原因的方法

    公开(公告)号：US20100060470A1

    公开(公告)日：2010-03-11

    申请号：US12546492

    申请日：2009-08-24

    申请人： Hiroshi MATSUSHITA

    发明人： Hiroshi MATSUSHITA

    IPC分类号： G08B21/00

    CPC分类号： G06Q10/06 ,  H01L21/67242

    摘要： A failure cause identifying device has a device parameter acquisition part configured to acquire a device parameter indicative of an operating state of a manufacturing device, an alarm generator configured to generate a device alarm with respect to the device parameter in accordance with a predetermined rule during the operation of the manufacturing device, a trouble acquisition part configured to acquire information relating to at least a part of troubles occurred in the manufacturing device, a significance detector configured to detect significance of a relationship between the device alarm and the trouble, and a significance judging part configured to judge whether or not a relationship between the device parameter and the trouble is significant based on the significance detected by the significance detector.

    摘要翻译： 故障原因识别装置具有被配置为获取指示制造装置的操作状态的装置参数的装置参数获取部件，被配置为在所述装置参数获取部件期间根据预定规则在所述装置参数期间根据所述装置参数生成装置报警 制造装置的操作，构成为获取与制造装置中发生的至少一部分故障有关的信息的故障取得部，检测装置报警与故障之间的关系的重要性的有效性检测装置， 基于由显着性检测器检测到的显着性，被配置为判断装置参数与故障之间的关系是否显着的部分。

    Abnormality cause specifying method, abnormality cause specifying system, and semiconductor device fabrication method
    7.
    发明授权
    Abnormality cause specifying method, abnormality cause specifying system, and semiconductor device fabrication method 失效
    异常原因指定方法，异常原因指定系统和半导体器件制造方法

    公开(公告)号：US07599817B2

    公开(公告)日：2009-10-06

    申请号：US11452305

    申请日：2006-06-14

    申请人： Hiroshi Matsushita

    发明人： Hiroshi Matsushita

    IPC分类号： G06F11/30 ,  G21C17/00 ,  G01B5/30

    CPC分类号： G05B23/024 ,  H01L22/20

    摘要： A feature amount is generated by standardizing inspection data related to a fabrication unit for each type, a similar set including fabrication units corresponding to similar feature amounts is formed by comparing the feature amounts, and apparatus difference analysis is performed between a plurality of fabrication units forming the similar set. A two-level orthogonal table is used to determine whether to adopt a feature amount of each type, and some feature amounts are not used in the apparatus difference analysis and the like by optimizing the smaller-the-better characteristic or the larger-the-better characteristic of a test value of the apparatus difference analysis, thereby reducing the calculation amount and accurately and efficiently specifying an abnormality cause.

    摘要翻译： 通过对每种类型的与制造单元相关的检查数据进行标准化生成特征量，通过比较特征量形成包括与相似特征量相对应的制造单位的类似集合，并且在多个制造单元之间进行装置差分析 类似的集合。 使用两级正交表来确定是否采用每种类型的特征量，并且通过优化较小的特征或较大的特征量，在装置差分分析等中不使用一些特征量， 更好的设备差异分析的测试值的特性，从而减少计算量并准确有效地指定异常原因。

    Defect detection system, defect detection method, and defect detection program
    8.
    发明申请
    Defect detection system, defect detection method, and defect detection program 失效
    缺陷检测系统，缺陷检测方法和缺陷检测程序

    公开(公告)号：US20080004823A1

    公开(公告)日：2008-01-03

    申请号：US11812398

    申请日：2007-06-19

    申请人： Hiroshi Matsushita ,  Yasutaka Arakawa ,  Junji Sugamoto

    发明人： Hiroshi Matsushita ,  Yasutaka Arakawa ,  Junji Sugamoto

    IPC分类号： G06F19/00

    CPC分类号： G05B19/41875 ,  G01N21/9501 ,  G05B2219/32221 ,  G05B2219/32222 ,  Y02P90/04 ,  Y02P90/22

    摘要： A defect detection system includes a data acquiring section that acquires time series data of device parameter of each manufacturing device including an exposure device, and information on defect distribution in an area with a size smaller than a chip area size, a pattern classifying section that assembles the information on the defect distribution in units of shot or chip areas, and classifies the distributions to a defect pattern, a feature quantity calculating section that processes the time series data and calculates a feature quantity, a significant difference test section that calculates occurrence frequency distributions of the shot or chip area wherein the defect pattern to the feature quantity exists and does not exist, respectively, and determines the presence/absence of significant difference between the frequency distributions, and a defect detecting section that detects the device parameter corresponding to the feature quantity as the cause of defect of the defect pattern.

    摘要翻译： 缺陷检测系统包括数据获取部分，其获取包括曝光装置的每个制造装置的装置参数的时间序列数据以及尺寸小于芯片面积尺寸的区域中的缺陷分布的信息;模式分类部， 关于以镜头或码片区域为单位的缺陷分布的信息，并将分布分类为缺陷图案，处理时间序列数据并计算特征量的特征量计算部分，计算出现频率分布的显着差异测试部分 分别存在特征量的缺陷图案并且不存在的拍摄或切片区域，并且确定频率分布之间存在/不存在显着差异;以及缺陷检测部分，其检测与特征对应的设备参数 数量作为缺陷模式缺陷的原因。

    Abnormality cause specifying method, abnormality cause specifying system, and semiconductor device fabrication method
    9.
    发明申请
    Abnormality cause specifying method, abnormality cause specifying system, and semiconductor device fabrication method 失效

    公开(公告)号：US20060281199A1

    公开(公告)日：2006-12-14

    申请号：US11452305

    申请日：2006-06-14

    申请人： Hiroshi Matsushita

    发明人： Hiroshi Matsushita

    IPC分类号： H01L21/66 ,  G01R31/26

    CPC分类号： G05B23/024 ,  H01L22/20

    摘要： A feature amount is generated by standardizing inspection data related to a fabrication unit for each type, a similar set including fabrication units corresponding to similar feature amounts is formed by comparing the feature amounts, and apparatus difference analysis is performed between a plurality of fabrication units forming the similar set. A two-level orthogonal table is used to determine whether to adopt a feature amount of each type, and some feature amounts are not used in the apparatus difference analysis and the like by optimizing the smaller-the-better characteristic or the larger-the-better characteristic of a test value of the apparatus difference analysis, thereby reducing the calculation amount and accurately and efficiently specifying an abnormality cause.