Abstract:
A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer to the separating regions; C) applying a respective radiation-emitting device to each of the plurality of mounting regions; D) applying a continuous potting layer to the radiation-emitting device and the separating regions; E) severing the potting layer and partially severing the interlayer in the separating regions of the carrier layer in a first separating step; and F) partially severing the interlayer and severing the carrier layer in a second separating step, wherein the interlayer is completely severed by the first and the second separating step.
Abstract:
An optoelectronic component includes a housing. At least one semiconductor chip is arranged in the housing. The semiconductor chip includes an active layer suitable for producing or detecting electromagnetic radiation. A casting compound at least partially surrounds the semiconductor chip. Reflective particles are embedded in the casting compound.
Abstract:
A method is disclosed for the manufacture of an optoelectronic component. A substrate has a first primary face and a second primary face that lies opposite the first primary face. A semiconductor body that is capable of emitting electromagnetic radiation from a front side is attached to the first primary face of the substrate. A covering that is transparent to the radiation from the optoelectronic semiconductor body is applied to at least the front side of the semiconductor body. The covering is given the form of an optical element by using a closed cavity that is shaped with the contour of the optical element.
Abstract:
An optoelectronic component (1) is provided, having at least two connecters (2) for electrical contacting of the component (1), a housing body (3), in which the connecters (2) are embedded in places, a heat sink (4), which is connected to at least one connecter (2), wherein the housing body (3) is formed of a plastics material, the housing body (3) comprises an opening (30), in which the heat sink (4) is freely accessible in places, at least one optoelectronic semiconductor chip (5) is arranged in the opening (30) on the heat sink (4), and at least two of the connecters (2) each comprise a chip-end portion (2c), which faces the at least one optoelectronic semiconductor chip (5), wherein the chip-end portions (2c) of the at least two connecters (2) are arranged in a common plane.
Abstract:
A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer to the separating regions; C) applying a respective radiation-emitting device to each of the plurality of mounting regions; D) applying a continuous potting layer to the radiation-emitting device and the separating regions; E) severing the potting layer and partially severing the interlayer in the separating regions of the carrier layer in a first separating step; and F) partially severing the interlayer and severing the carrier layer in a second separating step, wherein the interlayer is completely severed by the first and the second separating step.
Abstract:
To measure the effective directivity and/or the effective source port match of a test port of a system-calibrated vector network analyser, a precision air line short-circuited at the outlet is connected, and the complex reflection coefficient is measured at the inlet of this precision air line at a sequence of measuring points within a predefined frequency range. At the same time, for the effective directivity the sequence of the measured complex reflection coefficients is subjected to a discrete Fourier transformation and the baseband filtered out of the spectrum thereby formed. The sequence of effective directivity values is obtained by subsequent inverse Fourier retransformation.
Abstract:
To measure the effective directivity and/or the effective source port match of a test port of a system-calibrated vector network analyser, a precision air line short-circuited at the outlet is connected, and the complex reflection coefficient is measured at the inlet of this precision air line at a sequence of measuring points within a predefined frequency range. At the same time, for the effective directivity the sequence of the measured complex reflection coefficients is subjected to a discrete Fourier transformation and the baseband filtered out of the spectrum thereby formed. The sequence of effective directivity values is obtained by subsequent inverse Fourier retransformation.
Abstract:
An optoelectronic component including a connection carrier comprising a structured carrier strip in which interspaces are filled with an electrically insulating material and an optoelectronic semiconductor chip attached and electrically connected to a top portion of the connection carrier, wherein the electrically insulating material terminates substantially flush with the carrier strip in places or the carrier strip projects beyond the electrically insulating material, and the carrier strip is not covered by the electrically insulating material on the top portion and/or on a bottom portion of the connection carrier.
Abstract:
An optoelectronic semiconductor component includes a connection carrier with at least two connection points and a carrier top that in a main side of the connection carrier, wherein the connection carrier configured with a silicone matrix with a fiber reinforcement, at least one optoelectronic semiconductor chip mounted on the connection carrier and in direct contact therewith, an annular potting body includes a soft silicone on the carrier top and in direct contact with the carrier top, but not in direct contact with the semiconductor chip, and a glass body comprising a glass sheet applied over the semiconductor chip and over sides of the potting body remote from the connection carrier, thereby forming a space between the semiconductor chip and the potting body.