公开(公告)号：US20140017847A1

公开(公告)日：2014-01-16

申请号：US14008007

申请日：2012-02-24

申请人： Deoc Hwan Hyun ,  Jae Eock Cho ,  Dong Ho Lee ,  Gui Ryong Ahn ,  Hyun Cheol Ryu ,  Yong Hwa Lee ,  Gang Il Kim

发明人： Deoc Hwan Hyun ,  Jae Eock Cho ,  Dong Ho Lee ,  Gui Ryong Ahn ,  Hyun Cheol Ryu ,  Yong Hwa Lee ,  Gang Il Kim

IPC分类号： H01L31/0236

CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a method of manufacturing a solar cell, wherein a solar cell is manufactured by combining a damage removal etching process, a texturing process and an edge isolation process. The method is advantageous in that RIE and DRE are conducted, and then DRE/PSG and/or an edge isolation removal process are simultaneously conducted, so that the movement of a substrate (that is, a wafer) is minimized, thereby reducing the damage rate of the substrate.

摘要翻译： 提供一种制造太阳能电池的方法，其中通过组合损坏去除蚀刻工艺，纹理化工艺和边缘隔离工艺来制造太阳能电池。 该方法的优点在于进行RIE和DRE，然后同时进行DRE / PSG和/或边缘隔离去除工艺，使得衬底（即，晶片）的移动最小化，从而减少损伤 底物的比例。

公开(公告)号：US08536358B2

公开(公告)日：2013-09-17

申请号：US13059345

申请日：2010-01-22

申请人： Jong Sik Kim ,  Dong Wook Kim ,  Dong Ok Kim ,  Gui Ryong Ahn ,  Jeasung Park ,  Hyo Jin Jeon ,  Jisoon Ihm ,  Moon-Hyun Cha

发明人： Jong Sik Kim ,  Dong Wook Kim ,  Dong Ok Kim ,  Gui Ryong Ahn ,  Jeasung Park ,  Hyo Jin Jeon ,  Jisoon Ihm ,  Moon-Hyun Cha

IPC分类号： C07F9/00 ,  C07F7/00 ,  C07F5/00

CPC分类号： C01B3/0015 ,  C01B3/0026 ,  C01B6/02 ,  C07F3/003 ,  Y02E60/327 ,  Y02E60/328

摘要： The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (M1H(n-1)) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption. The complex according to the invention can store high capacity of hydrogen with safety and reversibility, while disintegration of its structure does not occur even with repeated adsorption-desorption of hydrogen.

摘要翻译： 本发明涉及可用于气体存储器，聚合催化剂和光学异构体的技术领域的物质，其中间体及其制备方法，其特征在于1）可能的支架材料的结构分解（ SM）受阻，2）与应用领域通常建议的物质相比，它们通过简单的制造系统制备。 具体地说，它涉及由支架材料（SM）和过渡金属氢化物（M1H（n-1））构成的支架材料 - 过渡金属氢化物络合物，其与化学键合在支架材料上形成的官能团，SM-过渡金属卤化物 络合物和SM-过渡金属配体络合物作为前体，以及其制备方法。 根据本发明的SM-过渡金属氢化物络合物是通过Kubas吸附吸附氢的储氢物质。 根据本发明的复合物可以安全和可逆地存储高容量氢气，而即使反复进行氢的吸附 - 脱附也不会发生其结构的分解。

公开(公告)号：US07497966B2

公开(公告)日：2009-03-03

申请号：US10594537

申请日：2005-03-24

申请人： Ho-Seong Nam ,  Jin-Seo Lee ,  Gui-Ryong Ahn

发明人： Ho-Seong Nam ,  Jin-Seo Lee ,  Gui-Ryong Ahn

IPC分类号： C09K13/00

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive solution comprised of deionized water, polishing particles, and a polishing particle dispersant; and an aqueous additive solution comprised of a carboxylic acid polymer compound, a nitrogen-containing organic cyclic compound, and an amine-group compound. The removal selectivity of the slurry may be improved by significantly lowering the speed of polishing of nitride film by adding a nitrogen-containing organic cyclic compound to an acrylic acid polymer compound, and by increasing the speed of removal of silicon oxide film by adding an amine-group compound, which is an accelerator of hydrolysis of silicon oxide film.

摘要翻译： 本发明涉及用于浅沟槽隔离的化学机械抛光浆料，更具体地涉及包含由去离子水，抛光颗粒和抛光颗粒分散剂组成的含水磨料溶液的化学机械抛光浆料。 和由羧酸高分子化合物，含氮有机环状化合物和胺基化合物组成的添加剂水溶液。 通过向丙烯酸类高分子化合物中添加含氮有机环状化合物，通过添加胺来提高氧化硅膜的除去速度，可以显着降低氮化膜的研磨速度，从而提高浆料的除去选择性 - 基团化合物，其是氧化硅膜的水解促进剂。

公开(公告)号：US09093580B2

公开(公告)日：2015-07-28

申请号：US14008007

申请日：2012-02-24

申请人： Deoc Hwan Hyun ,  Jae Eock Cho ,  Dong Ho Lee ,  Gui Ryong Ahn ,  Hyun Cheol Ryu ,  Yong Hwa Lee ,  Gang II Kim

发明人： Deoc Hwan Hyun ,  Jae Eock Cho ,  Dong Ho Lee ,  Gui Ryong Ahn ,  Hyun Cheol Ryu ,  Yong Hwa Lee ,  Gang II Kim

IPC分类号： H01L21/00 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided is a method of manufacturing a solar cell, wherein a solar cell is manufactured by combining a damage removal etching process, a texturing process and an edge isolation process. The method is advantageous in that RIE and DRE are conducted, and then DRE/PSG and/or an edge isolation removal process are simultaneously conducted, so that the movement of a substrate (that is, a wafer) is minimized, thereby reducing the damage rate of the substrate.

摘要翻译： 提供一种制造太阳能电池的方法，其中通过组合损坏去除蚀刻工艺，纹理化工艺和边缘隔离工艺来制造太阳能电池。 该方法的优点在于进行RIE和DRE，然后同时进行DRE / PSG和/或边缘隔离去除工艺，使得衬底（即，晶片）的移动最小化，从而减少损伤 底物的比例。

公开(公告)号：US20130123527A1

公开(公告)日：2013-05-16

申请号：US13723883

申请日：2012-12-21

申请人： Jong Sik KIM ,  Dong Ok KIM ,  Hee Bock YOON ,  Jaesung PARK ,  Hyo Jin JEON ,  Gui Ryong AHN ,  Dong Wook KIM ,  Jisoon IHM ,  Moon-Hyun CHA

发明人： Jong Sik KIM ,  Dong Ok KIM ,  Hee Bock YOON ,  Jaesung PARK ,  Hyo Jin JEON ,  Gui Ryong AHN ,  Dong Wook KIM ,  Jisoon IHM ,  Moon-Hyun CHA

IPC分类号： C07F7/28

CPC分类号： C07F7/28 ,  C01B3/0015 ,  C01B3/0026 ,  C01B6/02 ,  C07F1/00 ,  C07F1/005 ,  C07F7/003 ,  C07F17/00 ,  Y02E60/327 ,  Y02E60/328

摘要： The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen.The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10˜C20) aromatic compound in aprotic polar solvent; and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic-transition metal halide.The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

摘要翻译： 本发明涉及一种更先进的有机 - 过渡金属氢化物作为储氢材料的制备方法，精确地说是一种更有利于有机 - 过渡金属氢化物的芳基或烷基的制备方法，该方法有利于安全和反向储存大量的氢 。 本发明涉及一种有机 - 过渡金属氢化物的制备方法，包括以下步骤：通过使碱金属，碱土金属或其混合物与（C 10〜C 20）芳族化合物在非质子极性溶剂中反应制备复合还原剂组合物; 并通过使所制备的络合物还原剂组合物和有机 - 过渡金属卤化物反应制备有机 - 过渡金属氢化物。 本发明的方法具有通过使用复合还原剂和安全地生成有机 - 过渡金属氢化物而在更温和的反应条件下不变性来最小化副产物的数量和量的优点。

公开(公告)号：US20100036145A1

公开(公告)日：2010-02-11

申请号：US12538209

申请日：2009-08-10

申请人： Jong Sik Kim ,  Dong Ok Kim ,  Hee Bock Yoon ,  Jeasung Park ,  Hyo Jin Jeon ,  Gui Ryong Ahn ,  Dong Wook Kim ,  Jisoon Ihm ,  Moon-Hyun Cha

发明人： Jong Sik Kim ,  Dong Ok Kim ,  Hee Bock Yoon ,  Jeasung Park ,  Hyo Jin Jeon ,  Gui Ryong Ahn ,  Dong Wook Kim ,  Jisoon Ihm ,  Moon-Hyun Cha

IPC分类号： C07F7/28

CPC分类号： C07F7/28 ,  C01B3/0015 ,  C01B3/0026 ,  C01B6/02 ,  C07F1/00 ,  C07F1/005 ,  C07F7/003 ,  C07F17/00 ,  Y02E60/327 ,  Y02E60/328

摘要： The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen.The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10˜C20) aromatic compound in aprotic polar solvent; and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic-transition metal halide.The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

摘要翻译： 本发明涉及一种更先进的有机 - 过渡金属氢化物作为储氢材料的制备方法，精确地说是一种更有利于有机 - 过渡金属氢化物的芳基或烷基的制备方法，该方法有利于安全和反向储存大量的氢 。 本发明涉及一种有机 - 过渡金属氢化物的制备方法，包括以下步骤：通过使碱金属，碱土金属或其混合物与（C 10〜C 20）芳族化合物在非质子极性溶剂中反应制备复合还原剂组合物; 并通过使所制备的络合物还原剂组合物和有机 - 过渡金属卤化物反应制备有机 - 过渡金属氢化物。 本发明的方法具有通过使用复合还原剂和安全地生成有机 - 过渡金属氢化物而在更温和的反应条件下不变性来最小化副产物的数量和量的优点。

公开(公告)号：US20140014173A1

公开(公告)日：2014-01-16

申请号：US14006755

申请日：2012-02-23

申请人： Deoc Hwan Hyun ,  Jae Eock Cho ,  Dong Ho Lee ,  Hyun Cheol Ryu ,  Yong Hwa Lee ,  Gang Il Kim ,  Gui Ryong Ahn

发明人： Deoc Hwan Hyun ,  Jae Eock Cho ,  Dong Ho Lee ,  Hyun Cheol Ryu ,  Yong Hwa Lee ,  Gang Il Kim ,  Gui Ryong Ahn

IPC分类号： H01L31/0236

CPC分类号： H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.

摘要翻译： 本发明提供一种太阳能电池及其制造方法，更具体地，涉及一种使用干等离子体蚀刻同时形成选择性发射极结构和表面纹理的太阳能电池及其制造方法。 太阳能电池包括硅半导体基板; 具有表面的发射极掺杂层，其通过在硅半导体衬底的上部上的纹理化处理而被选择性地掺杂; 形成在基板前面的抗反射膜层; 前电极通过穿透抗反射膜层而接近发射极掺杂层; 以及接近硅半导体衬底后部的后电极。

公开(公告)号：US20090227808A1

公开(公告)日：2009-09-10

申请号：US12379950

申请日：2009-03-05

申请人： Jong Sik Kim ,  Jeasung Park ,  Hyo Jin Jeon ,  Hee Bock Yoon ,  Dong Wook Kim ,  Gui Ryong Ahn ,  Dong Ok Kim ,  Jisoon Ihm ,  Moon-Hyun Cha

发明人： Jong Sik Kim ,  Jeasung Park ,  Hyo Jin Jeon ,  Hee Bock Yoon ,  Dong Wook Kim ,  Gui Ryong Ahn ,  Dong Ok Kim ,  Jisoon Ihm ,  Moon-Hyun Cha

IPC分类号： C07F5/06

CPC分类号： C07F5/069 ,  C01B3/001 ,  C01B3/0015 ,  C01B3/0026 ,  Y02E60/327 ,  Y02E60/328

摘要： The present invention relates to an advanced preparation method of organic-transition metal hydride used as hydrogen storage materials, the method including: preparing organic-transition metal-aluminum hydride complexes by reacting the organic-transition metal halide with metal aluminum hydride compounds; and preparing the organic-transition metal hydride by reacting the organic-transition metal aluminum hydride complexes with Lewis bases.Since the preparation method of the organic-transition metal hydride according to the present invention does not use catalysts, it has advantages that it does not cause problems due to poisoning and can prepare the organic-transition metal hydride at high yield under less stringent conditions. The hydrogen storage materials containing the organic-transition metal hydride prepared from the preparation method can safely and reversibly store a large amount of hydrogen.

摘要翻译： 本发明涉及用作储氢材料的有机 - 过渡金属氢化物的先进制备方法，该方法包括：通过使有机 - 过渡金属卤化物与金属氢化铝化合物反应制备有机 - 过渡金属 - 氢化铝络合物; 并通过有机 - 过渡金属氢化铝络合物与路易斯碱反应来制备有机 - 过渡金属氢化物。 由于本发明的有机 - 过渡金属氢化物的制备方法不使用催化剂，因此其不会由于中毒而引起问题，并且可以在较不严格的条件下以高产率制备有机 - 过渡金属氢化物。 含有由制备方法制备的有机 - 过渡金属氢化物的储氢材料可以安全可逆地储存大量的氢。

公开(公告)号：US20070220813A1

公开(公告)日：2007-09-27

申请号：US10594537

申请日：2005-03-24

申请人： Ho-Seong Nam ,  Jin-Seo Lee ,  Gui-Ryong Ahn

发明人： Ho-Seong Nam ,  Jin-Seo Lee ,  Gui-Ryong Ahn

IPC分类号： C09G1/02

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive solution comprised of deionized water, polishing particles, and a polishing particle dispersant; and an aqueous additive solution comprised of a carboxylic acid polymer compound, a nitrogen-containing organic cyclic compound, and an amine-group compound. The removal selectivity of the slurry may be improved by significantly lowering the speed of polishing of nitride film by adding a nitrogen-containing organic cyclic compound to an acrylic acid polymer compound, and by increasing the speed of removal of silicon oxide film by adding an amine-group compound, which is an accelerator of hydrolysis of silicon oxide film.

摘要翻译： 本发明涉及用于浅沟槽隔离的化学机械抛光浆料，更具体地涉及包含由去离子水，抛光颗粒和抛光颗粒分散剂组成的含水磨料溶液的化学机械抛光浆料。 和由羧酸高分子化合物，含氮有机环状化合物和胺基化合物组成的添加剂水溶液。 通过向丙烯酸类高分子化合物中添加含氮有机环状化合物，通过添加胺来提高氧化硅膜的除去速度，可以显着降低氮化膜的研磨速度，从而提高浆料的除去选择性 - 基团化合物，其是氧化硅膜的水解促进剂。

公开(公告)号：US08822714B2

公开(公告)日：2014-09-02

申请号：US13723883

申请日：2012-12-21

申请人： Jong Sik Kim ,  Dong Ok Kim ,  Hee Bock Yoon ,  Jaesung Park ,  Hyo Jin Jeon ,  Gui Ryong Ahn ,  Dong Wook Kim ,  Jisoon Ihm ,  Moon-Hyun Cha

发明人： Jong Sik Kim ,  Dong Ok Kim ,  Hee Bock Yoon ,  Jaesung Park ,  Hyo Jin Jeon ,  Gui Ryong Ahn ,  Dong Wook Kim ,  Jisoon Ihm ,  Moon-Hyun Cha

IPC分类号： C07F7/28 ,  C07F1/00

CPC分类号： C07F7/28 ,  C01B3/0015 ,  C01B3/0026 ,  C01B6/02 ,  C07F1/00 ,  C07F1/005 ,  C07F7/003 ,  C07F17/00 ,  Y02E60/327 ,  Y02E60/328

摘要： The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10-C20) aromatic compound in aprotic polar solvent and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

摘要翻译： 本发明涉及一种更先进的有机 - 过渡金属氢化物作为储氢材料的制备方法，精确地说是一种更有利于有机 - 过渡金属氢化物的芳基或烷基的制备方法，该方法有利于安全和反向储存大量的氢 。 本发明涉及一种有机 - 过渡金属氢化物的制备方法，包括以下步骤：通过使碱金属，碱土金属或其混合物与（C 10 -C 20）芳族化合物在非质子极性溶剂中反应制备复合还原剂组合物，和 通过使所制备的络合物还原剂组合物和有机过渡金属卤化物反应制备有机 - 过渡金属氢化物。 本发明的方法具有通过使用复合还原剂和安全地生成有机 - 过渡金属氢化物而在更温和的反应条件下不变性来最小化副产物的数量和量的优点。