Solar Cell and Method for Manufacturing the Same
    1.
    发明申请
    Solar Cell and Method for Manufacturing the Same 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20100294357A1

    公开(公告)日:2010-11-25

    申请号:US12782676

    申请日:2010-05-18

    申请人: Deoc Hwan HYUN

    发明人: Deoc Hwan HYUN

    IPC分类号: H01L31/0236 H01L31/18

    摘要: A solar cell capable of improving efficiency, and a method for manufacturing the same is disclosed, wherein the method for manufacturing the solar cell comprises forming seeds in a predetermined surface portion of a semiconductor substrate doped with a first dopant through the use of silicon source gas; forming an irregularity structure on the semiconductor substrate by growing the seeds through a heat-treatment process; forming a first semiconductor layer doped with a second dopant in the semiconductor substrate with the irregularity structure, wherein the second dopant is different from the first dopant; and forming a front electrode at one side of the semiconductor substrate, the front electrode electrically connected to the first semiconductor layer.

    摘要翻译: 公开了一种能够提高效率的太阳能电池及其制造方法,其中,太阳能电池的制造方法包括通过使用硅源气体在掺杂有第一掺杂剂的半导体衬底的规定表面部分形成晶种 ; 通过热处理工艺生长种子,在半导体衬底上形成不规则结构; 在所述半导体衬底中形成具有不规则结构的掺杂有第二掺杂剂的第一半导体层,其中所述第二掺杂剂不同于所述第一掺杂剂; 以及在所述半导体衬底的一侧形成前电极,所述前电极与所述第一半导体层电连接。

    Solar Cell and Method for Manufacturing the Same
    2.
    发明申请
    Solar Cell and Method for Manufacturing the Same 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20140014173A1

    公开(公告)日:2014-01-16

    申请号:US14006755

    申请日:2012-02-23

    IPC分类号: H01L31/0236

    摘要: Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.

    摘要翻译: 本发明提供一种太阳能电池及其制造方法,更具体地,涉及一种使用干等离子体蚀刻同时形成选择性发射极结构和表面纹理的太阳能电池及其制造方法。 太阳能电池包括硅半导体基板; 具有表面的发射极掺杂层,其通过在硅半导体衬底的上部上的纹理化处理而被选择性地掺杂; 形成在基板前面的抗反射膜层; 前电极通过穿透抗反射膜层而接近发射极掺杂层; 以及接近硅半导体衬底后部的后电极。