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公开(公告)号:US20100294357A1
公开(公告)日:2010-11-25
申请号:US12782676
申请日:2010-05-18
申请人: Deoc Hwan HYUN
发明人: Deoc Hwan HYUN
IPC分类号: H01L31/0236 , H01L31/18
CPC分类号: H01L31/0236 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要: A solar cell capable of improving efficiency, and a method for manufacturing the same is disclosed, wherein the method for manufacturing the solar cell comprises forming seeds in a predetermined surface portion of a semiconductor substrate doped with a first dopant through the use of silicon source gas; forming an irregularity structure on the semiconductor substrate by growing the seeds through a heat-treatment process; forming a first semiconductor layer doped with a second dopant in the semiconductor substrate with the irregularity structure, wherein the second dopant is different from the first dopant; and forming a front electrode at one side of the semiconductor substrate, the front electrode electrically connected to the first semiconductor layer.
摘要翻译: 公开了一种能够提高效率的太阳能电池及其制造方法,其中,太阳能电池的制造方法包括通过使用硅源气体在掺杂有第一掺杂剂的半导体衬底的规定表面部分形成晶种 ; 通过热处理工艺生长种子,在半导体衬底上形成不规则结构; 在所述半导体衬底中形成具有不规则结构的掺杂有第二掺杂剂的第一半导体层,其中所述第二掺杂剂不同于所述第一掺杂剂; 以及在所述半导体衬底的一侧形成前电极,所述前电极与所述第一半导体层电连接。
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公开(公告)号:US20140014173A1
公开(公告)日:2014-01-16
申请号:US14006755
申请日:2012-02-23
申请人: Deoc Hwan Hyun , Jae Eock Cho , Dong Ho Lee , Hyun Cheol Ryu , Yong Hwa Lee , Gang Il Kim , Gui Ryong Ahn
发明人: Deoc Hwan Hyun , Jae Eock Cho , Dong Ho Lee , Hyun Cheol Ryu , Yong Hwa Lee , Gang Il Kim , Gui Ryong Ahn
IPC分类号: H01L31/0236
CPC分类号: H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.
摘要翻译: 本发明提供一种太阳能电池及其制造方法,更具体地,涉及一种使用干等离子体蚀刻同时形成选择性发射极结构和表面纹理的太阳能电池及其制造方法。 太阳能电池包括硅半导体基板; 具有表面的发射极掺杂层,其通过在硅半导体衬底的上部上的纹理化处理而被选择性地掺杂; 形成在基板前面的抗反射膜层; 前电极通过穿透抗反射膜层而接近发射极掺杂层; 以及接近硅半导体衬底后部的后电极。
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公开(公告)号:US20140017847A1
公开(公告)日:2014-01-16
申请号:US14008007
申请日:2012-02-24
申请人: Deoc Hwan Hyun , Jae Eock Cho , Dong Ho Lee , Gui Ryong Ahn , Hyun Cheol Ryu , Yong Hwa Lee , Gang Il Kim
发明人: Deoc Hwan Hyun , Jae Eock Cho , Dong Ho Lee , Gui Ryong Ahn , Hyun Cheol Ryu , Yong Hwa Lee , Gang Il Kim
IPC分类号: H01L31/0236
CPC分类号: H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要: Provided is a method of manufacturing a solar cell, wherein a solar cell is manufactured by combining a damage removal etching process, a texturing process and an edge isolation process. The method is advantageous in that RIE and DRE are conducted, and then DRE/PSG and/or an edge isolation removal process are simultaneously conducted, so that the movement of a substrate (that is, a wafer) is minimized, thereby reducing the damage rate of the substrate.
摘要翻译: 提供一种制造太阳能电池的方法,其中通过组合损坏去除蚀刻工艺,纹理化工艺和边缘隔离工艺来制造太阳能电池。 该方法的优点在于进行RIE和DRE,然后同时进行DRE / PSG和/或边缘隔离去除工艺,使得衬底(即,晶片)的移动最小化,从而减少损伤 底物的比例。
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公开(公告)号:US09093580B2
公开(公告)日:2015-07-28
申请号:US14008007
申请日:2012-02-24
申请人: Deoc Hwan Hyun , Jae Eock Cho , Dong Ho Lee , Gui Ryong Ahn , Hyun Cheol Ryu , Yong Hwa Lee , Gang II Kim
发明人: Deoc Hwan Hyun , Jae Eock Cho , Dong Ho Lee , Gui Ryong Ahn , Hyun Cheol Ryu , Yong Hwa Lee , Gang II Kim
IPC分类号: H01L21/00 , H01L31/0236 , H01L31/068 , H01L31/18
CPC分类号: H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要: Provided is a method of manufacturing a solar cell, wherein a solar cell is manufactured by combining a damage removal etching process, a texturing process and an edge isolation process. The method is advantageous in that RIE and DRE are conducted, and then DRE/PSG and/or an edge isolation removal process are simultaneously conducted, so that the movement of a substrate (that is, a wafer) is minimized, thereby reducing the damage rate of the substrate.
摘要翻译: 提供一种制造太阳能电池的方法,其中通过组合损坏去除蚀刻工艺,纹理化工艺和边缘隔离工艺来制造太阳能电池。 该方法的优点在于进行RIE和DRE,然后同时进行DRE / PSG和/或边缘隔离去除工艺,使得衬底(即,晶片)的移动最小化,从而减少损伤 底物的比例。
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公开(公告)号:US20140069498A1
公开(公告)日:2014-03-13
申请号:US14110557
申请日:2012-03-13
申请人: Jae Eock Cho , Yong Hwa Lee , Dong Ho Lee , Hyun Cheol Ryu , Gang Il Kim , Deoc Hwan Hyun
发明人: Jae Eock Cho , Yong Hwa Lee , Dong Ho Lee , Hyun Cheol Ryu , Gang Il Kim , Deoc Hwan Hyun
IPC分类号: H01L31/0216 , H01L31/0224
CPC分类号: H01L31/02168 , H01L31/022425 , Y02E10/50
摘要: Provided is a solar cell, including: a semiconductor substrate having a p-n junction; an antireflection film formed on at least one side of the semiconductor substrate; first electrodes formed on the antireflection film; and second electrodes covering the first electrodes, wherein only the first electrodes selectively penetrate the antireflection film and is thus connected with the semiconductor substrate by a punch through process.
摘要翻译: 提供一种太阳能电池,包括:具有p-n结的半导体衬底; 形成在所述半导体衬底的至少一侧上的抗反射膜; 在抗反射膜上形成的第一电极; 以及覆盖第一电极的第二电极,其中只有第一电极选择性地穿透防反射膜,并且因此通过冲孔过程与半导体衬底连接。
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