Method and apparatus for the selective, self-aligned deposition of metal
layers
    1.
    发明授权
    Method and apparatus for the selective, self-aligned deposition of metal layers 失效
    用于金属层的选择性,自对准沉积的方法和装置

    公开(公告)号:US4569743A

    公开(公告)日:1986-02-11

    申请号:US649255

    申请日:1984-09-10

    摘要: A method and apparatus for the selective deposition of metal layers on a substrate. At least one metal layer is deposited in a self-aligned manner on conductive regions on the surface of isolating or semiconductive substrates, for which purpose the conductive regions are arranged facing a metal plate having at least one layer of the metal to be deposited, and Tesla currents are generated between the metal plate and the regions to be coated. The apparatus for implementing the method includes a metal plate, a Tesla transformer which is coupled to the metal plate or to a metal grid, spaced apart from the surface of the metal plate away from the conductive regions, having closely adjacent and regularly distributed spikes pointing towards the metal. This method may be used, for example, to produce conductors on or in ceramic modules, circuit cards and semiconductor elements.

    摘要翻译: 一种用于在衬底上选择性沉积金属层的方法和装置。 至少一个金属层以自对准的方式沉积在隔离或半导体衬底的表面上的导电区域上,为此目的,导电区域面向具有至少一层待沉积金属的金属板,以及 在金属板和待涂覆的区域之间产生特斯拉电流。 用于实现该方法的装置包括金属板,特斯拉变压器,其耦合到金属板或金属栅格,与金属板的远离导电区域的表面间隔开,具有紧密相邻且规则分布的尖峰指向 朝向金属。 该方法可以用于例如在陶瓷模块,电路卡和半导体元件上或陶瓷模块中生产导体。