公开(公告)号：US20110240082A1

公开(公告)日：2011-10-06

申请号：US12963136

申请日：2010-12-08

申请人： Nelson Tansu ,  Hua Tong ,  Jing Zhang ,  Guangyu Liu ,  Gensheng Huang

发明人： Nelson Tansu ,  Hua Tong ,  Jing Zhang ,  Guangyu Liu ,  Gensheng Huang

IPC分类号： H01L35/14 ,  H01L35/34

CPC分类号： H01L35/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).

摘要翻译： 本发明是通过在衬底上生长单晶AlInN半导体材料制造的热电器件及其制造方法。 在优选实施例中，半导体材料是在蓝宝石衬底上生长并与GaN模板晶格匹配的AlInN，并且使用金属有机气相外延（MOVPE）进行生长。

公开(公告)号：US20070128743A1

公开(公告)日：2007-06-07

申请号：US11328022

申请日：2006-01-09

申请人： Gensheng Huang ,  Hsin-Hung Yao ,  Hao-Chung Kuo ,  Shing-Chung Wang

发明人： Gensheng Huang ,  Hsin-Hung Yao ,  Hao-Chung Kuo ,  Shing-Chung Wang

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L31/02165 ,  H01L33/06 ,  H01L33/105 ,  H01L33/32 ,  H01S5/183 ,  H01S5/3216 ,  H01S5/32341

摘要： To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.

摘要翻译： 为了解决现有技术中使用的分布式布拉格反射器（DBR）中的现有问题，本发明提供了一种用于垂直腔表面发射激光器（VCSEL）的III族氮化物基分布布拉格反射器（DBR）的制造方法，其抑制了发生 的裂纹，以及具有高反射率，宽阻带和对诸如垂直腔表面发射激光器，微腔发光二极管，共振腔发光二极管和光电检测器的光学装置的适应性的分布式布拉格反射器。

公开(公告)号：US09525117B2

公开(公告)日：2016-12-20

申请号：US12963136

申请日：2010-12-08

申请人： Nelson Tansu ,  Hua Tong ,  Jing Zhang ,  Guangyu Liu ,  Gensheng Huang

发明人： Nelson Tansu ,  Hua Tong ,  Jing Zhang ,  Guangyu Liu ,  Gensheng Huang

IPC分类号： H01L35/14 ,  H01L35/22 ,  H01L21/02

CPC分类号： H01L35/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).

摘要翻译： 本发明是通过在衬底上生长单晶AlInN半导体材料制造的热电器件及其制造方法。 在优选实施例中，半导体材料是在蓝宝石衬底上生长并与GaN模板晶格匹配的AlInN，并且使用金属有机气相外延（MOVPE）进行生长。

公开(公告)号：US10115859B2

公开(公告)日：2018-10-30

申请号：US12968960

申请日：2010-12-15

申请人： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

发明人： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/32

摘要： A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 Å or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

公开(公告)号：US20110204328A1

公开(公告)日：2011-08-25

申请号：US12968960

申请日：2010-12-15

申请人： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

发明人： Nelson Tansu ,  Hongping Zhao ,  Guangyu Liu ,  Gensheng Huang

IPC分类号： H01L29/06 ,  B82Y99/00

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 Å or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

摘要翻译： 对称量子阱活性层提供增强的内部量子效率。 量子阱活性层包括内（中）层和夹在内层的一对外层。 内层和外层具有不同的厚度和带隙特性。 外层相对较厚并且包括相对较低的带隙材料，例如InGaN。 内层具有相对较低的带隙材料，并且足够薄以充当量子阱δ层，例如包含大约或更小的InN。 这种量子阱结构有利地将发射波长扩展到黄/红光谱状态，并且增强自发发射。 多层量子阱有源层被诸如GaN之类的高带隙材料的阻挡层夹在中间。