发明申请
- 专利标题： Process of producing group III nitride based reflectors
- 专利标题（中）： 生产III族氮化物反射器的工艺
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申请号： US11328022申请日： 2006-01-09
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公开(公告)号： US20070128743A1公开(公告)日： 2007-06-07
- 发明人: Gensheng Huang , Hsin-Hung Yao , Hao-Chung Kuo , Shing-Chung Wang
- 申请人： Gensheng Huang , Hsin-Hung Yao , Hao-Chung Kuo , Shing-Chung Wang
- 申请人地址： TW Hsinchu
- 专利权人： National Chiao Tung University
- 当前专利权人： National Chiao Tung University
- 当前专利权人地址： TW Hsinchu
- 优先权： TW094142756 20051205
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L33/00
摘要：
To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.
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