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    Turbine blade assembly with stranded wire cable dampers
    3.
    发明授权
    Turbine blade assembly with stranded wire cable dampers 有权
    涡轮叶片组件与绞线电缆阻尼器

    公开(公告)号：US06685435B2

    公开(公告)日：2004-02-03

    申请号：US10133057

    申请日：2002-04-26

    申请人： Gary A. Davis ,  Gary E. Tuttle ,  Robert F. Beatty

    发明人： Gary A. Davis ,  Gary E. Tuttle ,  Robert F. Beatty

    IPC分类号： F01D526

    CPC分类号： F01D5/16 ,  F01D5/26 ,  Y10S416/50

    摘要： A turbine blade assembly for a turbine assembly includes a turbine blade having a turbine blade damper cavity formed therein and stranded wire cable positioned within the turbine blade damper cavity. The stranded wire cable is maintained in the damper cavity during operation of the turbine blade assembly. It reduces vibration of the turbine blade assembly during operation by dissipating energy by friction between the stranded wire cable and the internal surface of the blade that defines the damper cavity. It also dissipates energy by friction between adjacent wires within the stranded wire cable.

    摘要翻译： 一种用于涡轮组件的涡轮机叶片组件包括涡轮机叶片，其具有形成在其中的涡轮叶片阻尼器空腔和位于涡轮叶片阻尼腔内的绞合线缆。 在涡轮机叶片组件的操作期间，绞合的线缆保持在阻尼腔中。 它通过在绞合线缆和限定阻尼腔的叶片的内表面之间的摩擦而消耗能量来减少运行期间涡轮叶片组件的振动。 它还通过绞线电缆内的相邻电线之间的摩擦消散能量。

    Methods and apparatus for linear scan magnetron sputtering
    4.
    发明授权
    Methods and apparatus for linear scan magnetron sputtering 失效
    线性扫描磁控溅射的方法和装置

    公开(公告)号：US5873989A

    公开(公告)日：1999-02-23

    申请号：US795754

    申请日：1997-02-06

    申请人： John L. Hughes ,  Gary A. Davis ,  Robert J. Kolenkow ,  Carl T. Petersen ,  Norman H. Pond ,  Robert E. Weiss

    发明人： John L. Hughes ,  Gary A. Davis ,  Robert J. Kolenkow ,  Carl T. Petersen ,  Norman H. Pond ,  Robert E. Weiss

    IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C14/34

    CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

    摘要： A magnetron sputtering source for depositing a material onto a substrate includes a target from which the material is sputtered, a magnet assembly disposed in proximity to the target for confining a plasma at the surface of the target and a drive assembly for scanning the magnet assembly relative to the target. The sputtering source may further include an anode for maintaining substantially constant plasma characteristics as the magnet assembly is scanned relative to the target. The anode may be implemented as variable voltage stationary electrodes positioned at or near the opposite ends of the scan path followed by the magnet assembly, spaced-apart anode wires positioned between the target and the substrate or a movable anode that is scanned with the magnet assembly. The magnet elements of the magnet assembly may have different spacings from the surface of the target to enhance depositional thickness uniformity. The target may be fabricated in sections, each having a target element bonded to a backing element for reduced sensitivity to thermal variations. The target may be rotated from a first fixed position to a second fixed position relative to the magnet assembly at least once during its operating life for increased target utilization.

    摘要翻译： 用于将材料沉积到衬底上的磁控溅射源包括溅射材料的靶，设置在靶附近的磁体组件，用于限制目标表面处的等离子体和用于扫描磁体组件的驱动组件 到目标。 当磁体组件相对于靶被扫描时，溅射源还可以包括用于维持基本恒定的等离子体特性的阳极。 阳极可以被实现为位于扫描路径的相对端处或附近的可变电压固定电极，随后是磁体组件，位于靶和衬底之间的间隔开的阳极线或者用磁体组件扫描的可移动阳极 。 磁体组件的磁体元件可以具有与目标表面不同的间隔，以增强沉积厚度均匀性。 靶可以制造成具有目标元件结合到背衬元件的部分，以降低对热变化的敏感性。 目标可以在其运行寿命期间相对于磁体组件从第一固定位置旋转至第二固定位置，以增加目标利用率。

    Turbine blade assembly with pin dampers
    7.
    发明授权
    Turbine blade assembly with pin dampers 有权
    涡轮叶片组件带销阻尼器

    公开(公告)号：US06676380B2

    公开(公告)日：2004-01-13

    申请号：US10120584

    申请日：2002-04-11

    申请人： Gary A. Davis ,  Gary E. Tuttle

    发明人： Gary A. Davis ,  Gary E. Tuttle

    IPC分类号： F04D526

    CPC分类号： F01D5/26 ,  Y10S416/50

    摘要： A turbine blade assembly for a turbine assembly includes a turbine blade having a turbine blade damper cavity formed therein and a plurality of pins positioned within the turbine blade damper cavity. The pins are maintained in the damper cavity during operation of the turbine blade assembly. They reduce vibration of the turbine blade assembly during operation by dissipating energy by friction between adjacent pins and between the pins and the internal surface of the blade that defines the damper cavity.

    摘要翻译： 一种用于涡轮组件的涡轮机叶片组件，包括具有形成在其中的涡轮叶片阻尼器空腔的涡轮机叶片和位于涡轮叶片阻尼腔内的多个销。 在涡轮叶片组件的操作期间，销保持在阻尼腔中。 它们通过相邻销之间的摩擦和销与限定阻尼腔的叶片的内表面之间的摩擦而消耗能量来减少运行期间涡轮叶片组件的振动。

    Umbrella holder
    8.
    发明授权
    Umbrella holder 失效
    伞架

    公开(公告)号：US5836327A

    公开(公告)日：1998-11-17

    申请号：US906577

    申请日：1997-08-05

    申请人： Gary A. Davis

    发明人： Gary A. Davis

    IPC分类号： A45B11/00 ,  A63B55/60 ,  B62B9/14 ,  F16M13/02 ,  A45B3/00

    CPC分类号： B62B9/147 ,  A45B11/00 ,  F16M11/10 ,  F16M11/2021 ,  F16M11/28 ,  F16M13/022 ,  A63B2055/602

    摘要： An umbrella holder comprising a clamp mechanism; a right/left angular adjustment mechanism, a forward/rearward angular adjustment mechanism; a length adjustment mechanism; and an umbrella shaft and handle securing mechanism. The clamp mechanism includes an upper and lower jaw member, an upper and lower resilient clamp pad, and a clamp screw mechanism. Each upper and lower jaw member is provided with a clamp channel that is covered with the upper or lower resilient clamp pad, respectively. The clamp channels are oriented in opposed relationship and the clamp screw mechanism threadable engages the lower jaw member and rotatably engages the upper jaw member in a manner such that rotation of the clamp screw mechanism causes the upper and lower jaw to be forced together or apart depending on the direction of rotation of the clamp screw mechanism. The umbrella shaft and handle securing mechanism includes a shaft channel clamp and a handle strap assembly positioned below the shaft channel clamp. The shaft channel clamp includes a channel member having an elongated channel that is covered with resilient padding and sized to receive therein a portion of the shaft of an umbrella. A compression member rotatably connected to a shaft clamp screw mechanism is positioned within the elongated channel. The compression member has a resilient pad covering the compression surface thereof. The compression member is preferably elongated and can also have a curved channelized surface if desired. The handle strap assembly includes a flexible strap having an adjustable securing mechanism.

    摘要翻译： 一种伞架，包括夹紧机构; 右/左角度调节机构，前/后角度调节机构; 长度调整机制; 伞柄和手柄固定机构。 夹紧机构包括上下爪构件，上下弹性夹紧垫和夹紧螺钉机构。 每个上下钳口构件设置有分别由上或下弹性夹持垫覆盖的夹紧通道。 夹钳通道以相对关系定向，并且夹紧螺纹机构可螺纹接合下钳口构件并以可旋转地接合上钳口构件的方式使得夹紧螺钉机构的旋转使得上下钳夹压在一起或分开， 在夹紧螺丝机构的旋转方向上。 伞杆和手柄固定机构包括轴通道夹具和位于轴通道夹具下方的手柄带组件。 轴通道夹具包括具有细长通道的通道构件，该通道被弹性衬垫覆盖并且尺寸适于在其中容纳伞的轴的一部分。 可旋转地连接到轴夹螺钉机构的压缩构件定位在细长通道内。 压缩构件具有覆盖其压缩表面的弹性垫。 压缩构件优选地是细长的，并且如果需要也可以具有弯曲的通道化表面。 手柄带组件包括具有可调节固定机构的柔性带。

    Heterojunction electron transfer device
    9.
    发明授权
    Heterojunction electron transfer device 失效
    异质结电子转移装置

    公开(公告)号：US5576559A

    公开(公告)日：1996-11-19

    申请号：US332880

    申请日：1994-11-01

    申请人： Gary A. Davis

    发明人： Gary A. Davis

    IPC分类号： H01L31/10 ,  H01J1/34 ,  H01L21/331 ,  H01L29/205 ,  H01L29/66 ,  H01L29/73 ,  H01L29/737 ,  H01L31/032 ,  H01L31/103 ,  H01L31/105 ,  H01L31/108 ,  H01L31/109 ,  H01L27/14

    CPC分类号： H01L31/1035 ,  H01L29/205 ,  H01L31/105 ,  H01L31/108

    摘要： A smooth and monotonic potential energy gradient was established at a p-type (InGa)As--undopad InP heterojunction to efficiently transfer conduction electrons from the (InGa)As:p layer to the InP:.o slashed. layer. This potential energy gradient was established with a compositionally graded p-type semiconductor alloy layer and an n-type InP built-in field layer interposed at the heterojunction. The compositionally graded semiconductor alloy layer spatially distributes the conduction band discontinuity of the (InGa)As--InP heterojunction and the InP:n built-in field layer eliminates potential energy barriers from the conduction band over a wide range of externally-applied biases including no externally applied bias. The smooth and monotonic potential energy gradient thus established promotes efficient transfer of the conduction electrons due to drift from the (InGa)As:p layer to the large bandgap InP collector layer where they contribute to the output current of any number of electronic devices. The utility of this potential energy grading structure was demonstrated in a transferred-electron photocathode device wherein the efficient transfer of photoelectrons from the (InGa)As:p absorber layer to the InP:.o slashed. electron-transfer layer has been utilized. This structure has utility in a number of electronic devices requiring such electron transfer across an (InGa)As:p--InP:.o slashed. heterojunction including p-i-n photodetectors and heterojunction bipolar transistors.

    摘要翻译： 在p型（InGa）As-undopad InP异质结中建立了平滑和单调的势能梯度，以有效地将传导电子从（InGa）As：p层转移到InP：+526层。 这种势能梯度是通过组成分级的p型半导体合金层和插在异质结中的n型InP内置场层建立的。 组成分级的半导体合金层在空间上分布（InGa）As-InP异质结的导带不连续性，InP：n内置场层在宽范围的外部施加的偏差范围内消除了来自导带的潜在能量障碍，包括 外部施加偏差。 这样建立的平滑和单调势能梯度促进了由于（InGa）As：p层漂移到大带隙InP集电极层的传导电子的有效传递，在那里它们有助于任何数量的电子器件的输出电流。 已经利用了转移电子光电阴极装置中的这种势能分级结构的实用性，其中已经利用了从（InGa）As：p吸收层到InP：+526电子转移层的光电子的有效转移。 该结构在许多电子器件中具有实用性，该电子器件需要通过包括p-i-n光电检测器和异质结双极晶体管的（InGa）As：p-InP：+526异质结进行电子转移。

    Pseudomorphic substrates
    10.
    发明授权
    Pseudomorphic substrates 失效
    假基质

    公开(公告)号：US5512375A

    公开(公告)日：1996-04-30

    申请号：US138454

    申请日：1993-10-14

    申请人： Roger T. Green ,  Gary A. Davis ,  Verle W. Aebi

    发明人： Roger T. Green ,  Gary A. Davis ,  Verle W. Aebi

    IPC分类号： C30B25/02 ,  C30B25/18 ,  B32B17/06 ,  C30B29/40

    CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40

    摘要： High quality epitaxial layers can be grown on a multi-layer substrate which has a crystalline pseudomorphic layer with an exposed surface used for the epitaxial growth. The pseudomorphic layer of the substrate has a thickness at or below the pseudomorphic limit so it will be deformed as stress forces are developed during epitaxial growth of heteroepitaxial structures. A plastically deformable layer is bonded to the pseudomorphic layer, This plastically deformable layer is made of material that plastically flows at epitaxial growth temperatures.

    摘要翻译： 可以在具有用于外延生长的暴露表面的晶体假晶层的多层衬底上生长高质量外延层。 衬底的假晶层具有等于或低于假晶界限的厚度，因此当异质外延结构的外延生长过程中产生应力时，其将会变形。 可塑性变形层结合到假晶层上。该塑性变形层由在外延生长温度下塑性流动的材料制成。