公开(公告)号：US20160322493A1

公开(公告)日：2016-11-03

申请号：US15002078

申请日：2016-01-20

申请人： Wei-E Wang ,  Mark S. Rodder ,  Ganesh Hedge ,  Christopher Bowen

发明人： Wei-E Wang ,  Mark S. Rodder ,  Ganesh Hedge ,  Christopher Bowen

IPC分类号： H01L29/78 ,  H01L29/04 ,  H01L21/308 ,  H01L21/764 ,  H01L21/02

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/3081 ,  H01L21/764 ,  H01L29/045 ,  H01L29/161

摘要： Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a critical thickness, hc, at which threading dislocations form in Si1-xGex on silicon; etching the epitaxial layer of Si1-xGex to form Si1-xGex pillars that define a trench in the epitaxial layer of Si1-xGex, wherein the trench has a height and a width, wherein the trench has an aspect ratio of height to width of at least 1.5; and epitaxially growing a suspended layer of Si1-xGex from upper portions of the Si1-xGex pillars, wherein the suspended layer defines an air gap in the trench beneath the suspended layer of Si1-xGex.

摘要翻译： 形成硅锗层的方法包括在硅衬底上形成Si1-xGex的外延层，其中Si1-xGex的外延层的厚度小于在Si1中形成穿透位错的临界厚度hc -xGex硅; 蚀刻Si1-xGex的外延层以形成在Si1-xGex的外延层中限定沟槽的Si1-xGex柱，其中沟槽具有高度和宽度，其中沟槽具有高度与宽度的纵横比 至少1.5; 并从Si1-xGex柱的上部外延生长Si1-xGex的悬浮层，其中悬浮层在Si1-xGex的悬浮层下方的沟槽中限定气隙。

公开(公告)号：US09773906B2

公开(公告)日：2017-09-26

申请号：US15002078

申请日：2016-01-20

申请人： Wei-E Wang ,  Mark S. Rodder ,  Ganesh Hedge ,  Christopher Bowen

发明人： Wei-E Wang ,  Mark S. Rodder ,  Ganesh Hedge ,  Christopher Bowen

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/764 ,  H01L21/02 ,  H01L21/308 ,  H01L29/04

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/3081 ,  H01L21/764 ,  H01L29/045 ,  H01L29/161

摘要： Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a critical thickness, hc, at which threading dislocations form in Si1-xGex on silicon; etching the epitaxial layer of Si1-xGex to form Si1-xGex pillars that define a trench in the epitaxial layer of Si1-xGex, wherein the trench has a height and a width, wherein the trench has an aspect ratio of height to width of at least 1.5; and epitaxially growing a suspended layer of Si1-xGex from upper portions of the Si1-xGex pillars, wherein the suspended layer defines an air gap in the trench beneath the suspended layer of Si1-xGex.