公开(公告)号：US09452928B2

公开(公告)日：2016-09-27

申请号：US13573237

申请日：2012-08-31

申请人： Gabriel Walter ,  Poh Lian Lam

发明人： Gabriel Walter ,  Poh Lian Lam

IPC分类号： H04B10/12 ,  H04B10/00 ,  B82Y20/00

CPC分类号： B82Y20/00

摘要： A hybrid circuit for producing optical signals in response to electrical energizing signals, including: a tilted charge light-emitting device having an electrical input port and an optical output port, the device having an optical output response which is a function of input frequency; and an input interface circuit coupled with the electrical input port of the device, and having a transfer function substantially proportional to an inverse of the optical output response of the device; whereby application of the electrical energizing signals to the input interface circuit is operative to produce optical signals from the output optical port of the device. The input interface circuit includes a passive RLC circuit having a transfer function characterized by a region of increasing amplitude versus frequency.

公开(公告)号：US20160230233A1

公开(公告)日：2016-08-11

申请号：US15136929

申请日：2016-04-24

申请人： Gabriel Walter WASSER ,  Rappaport Family Institute for Research in the Medical Sciences ,  Ramot at Tel-Aviv University Ltd.

发明人： Karl SKORECKI ,  Shay TZUR ,  Saharon ROSSET ,  Walter Gabriel WASSER ,  Doron M. BEHAR ,  Revital SHEMER

IPC分类号： C12Q1/68 ,  C12Q1/70 ,  G01N33/68

CPC分类号： C12Q1/6883 ,  C12Q1/703 ,  C12Q2600/106 ,  C12Q2600/156 ,  C12Q2600/172 ,  G01N33/6893 ,  G01N2333/775 ,  G01N2800/50

摘要： Provided are methods and kits for determining predisposition of a subject to develop a kidney disease, by identifying in a sample of the subject at least one APOL1 polypeptide variant which is characterized by a higher trypanolytic activity on Trypanosoma brucei rhodesiense as compared to the trypanolytic activity of wild type APOL1 polypeptide as set forth in SEQ ID NO:1 on the Trypanosoma brucei rhodesiense under identical assay conditions; or at least one APOL1 nucleotide mutation in the APLO1 genomic sequence set forth in SEQ ID NO:3, wherein the at least one nucleotide mutation or polypeptide variant being in linkage disequlibrium (LD) with the S342G mutation in the APOL1 polypeptide set forth in SEQ ID NO:1, wherein presence of the APOL1 polypeptide variant indicates increased predisposition of the subject to develop the kidney disease.

摘要翻译： 提供了用于确定受试者的易感性以发展肾脏疾病的方法和试剂盒，通过在受试者样品中鉴定至少一种APOL1多肽变体，其特征在于与锥虫属罗非鱼相比具有更高的锥虫解活性， 野生型APOL1多肽，如同样的测定条件下的罗丹明锥虫在SEQ ID NO：1中所示; 或在SEQ ID NO：3中列出的APLO1基因组序列中的至少一个APOL1核苷酸突变，其中所述至少一个核苷酸突变或多肽变体与APOL1多肽中所示的S342G突变处于连锁不平衡（LD） ID NO：1，其中APOL1多肽变体的存在表明受试者发生肾脏疾病的易感性增加。

公开(公告)号：US08494375B2

公开(公告)日：2013-07-23

申请号：US12927159

申请日：2010-11-08

申请人： Gabriel Walter

发明人： Gabriel Walter

IPC分类号： H04B10/00

CPC分类号： H04B10/12 ,  H04B10/2504 ,  H04B10/25759

摘要： The disclosure has application for use in establishing a communication link between a first location and a second location, the first location having an electrical driver circuit that receives input data to be communicated, and the second location having an electrical receiver circuit for producing output data representative of the input data. The method includes the following steps: providing a tilted charge light emitting device at the first location and coupled with the driver circuit such that the light produced by the tilted charge light-emitting device is a function of the input data; providing an optical fiber between the first and second locations; coupling light from the tilted charge light emitting device into the optical fiber; and providing, at the second location, a photodetector coupled with the optical fiber and with the receiver circuit; whereby electrical signals representative of the input data are output from the receiver circuit.

摘要翻译： 本公开具有用于建立第一位置和第二位置之间的通信链路的应用，第一位置具有接收要传送的输入数据的电驱动器电路，并且第二位置具有用于产生输出数据代表的电接收器电路 的输入数据。 该方法包括以下步骤：在第一位置处提供倾斜的电荷发光器件，并与驱动器电路耦合，使得由倾斜电荷发光器件产生的光是输入数据的函数; 在所述第一和第二位置之间提供光纤; 将来自倾斜电荷发光器件的光耦合到光纤中; 以及在所述第二位置处提供与所述光纤耦合的光电检测器和所述接收器电路; 从而从接收器电路输出表示输入数据的电信号。

公开(公告)号：US20100272140A1

公开(公告)日：2010-10-28

申请号：US12799083

申请日：2010-04-16

申请人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

发明人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

IPC分类号： H01S5/042 ,  H05B41/24

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/30 ,  H01L33/38 ,  H01S5/06213 ,  H01S5/183 ,  H01S5/1835 ,  H01S5/34313

摘要： A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with the emitter, base, and collector regions; applying electrical signals, including the high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including the high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.

摘要翻译： 一种表示高频电输入信号分量的高频光信号分量的制造方法包括以下步骤：提供半导体晶体管结构，该半导体晶体管结构包括半导体类型的基极区域，在第二半导体的半导体发射极和集电极区域之间 类型; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量在内的电信号，以在量子尺寸区域辅助的基极区域产生输出自发光发射，包括高频率的输出自发光发射 光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

公开(公告)号：US07286583B2

公开(公告)日：2007-10-23

申请号：US11068561

申请日：2005-02-28

申请人： Milton Feng ,  Nick Holonyak, Jr. ,  Richard Chan ,  Gabriel Walter

发明人： Milton Feng ,  Nick Holonyak, Jr. ,  Richard Chan ,  Gabriel Walter

IPC分类号： H01S3/13

CPC分类号： H01L33/0016 ,  B82Y20/00 ,  H01L33/08 ,  H01S5/0422 ,  H01S5/0618 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/06812 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34313

摘要： A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.

摘要翻译： 一种制造可控光脉冲的方法包括以下步骤：提供包括半导体材料的集电极，基极和发射极区域的异质结双极晶体管结构; 提供封闭所述晶体管结构的至少一部分的光学谐振腔; 并且相对于集电极，基极和发射极区域耦合电信号，以在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换。 以该方法的形式，电信号包括AC激励信号，并且每个激励信号周期的一部分可操作以产生受激发射，并且每个激励信号周期的另一部分可操作以产生自发发射。

公开(公告)号：US20070201523A1

公开(公告)日：2007-08-30

申请号：US11364893

申请日：2006-02-27

申请人： Gabriel Walter ,  Nick Holonyak ,  Milton Feng ,  Richard Chan

发明人： Gabriel Walter ,  Nick Holonyak ,  Milton Feng ,  Richard Chan

IPC分类号： H01S5/00 ,  H01L31/00

CPC分类号： H01S5/0421 ,  H01L33/0004 ,  H01L33/04 ,  H01S5/06203 ,  H01S5/183 ,  H01S5/3054 ,  H01S5/3095

摘要： A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.

摘要翻译： 一种半导体发光晶体管器件，包括：具有p型集电极，n型基极和p型发射极的双极pnp晶体管结构; 与集电极耦合的第一隧道结和与发射极耦合的第二隧道结; 以及与所述第一隧道结耦合的集电极触点，与所述第二隧道结耦合的发射极触点，以及与所述基极耦合的基极触点; 由此，相对于集电极，基极和发射极接触点施加的信号通过基底中的辐射复合导致来自基底的光发射。

公开(公告)号：US08509274B2

公开(公告)日：2013-08-13

申请号：US12799080

申请日：2010-04-16

申请人： Gabriel Walter ,  Nick Holonyak, Jr. ,  Milton Feng ,  Chao-Hsin Wu

发明人： Gabriel Walter ,  Nick Holonyak, Jr. ,  Milton Feng ,  Chao-Hsin Wu

IPC分类号： H01S3/00

CPC分类号： H01S5/34 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06213 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/34313

摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.

摘要翻译： 一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域， 至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。

公开(公告)号：US20120068151A1

公开(公告)日：2012-03-22

申请号：US13200168

申请日：2011-09-20

申请人： Gabriel Walter

发明人： Gabriel Walter

IPC分类号： H01L33/04 ,  H01L33/02

CPC分类号： H01L33/0025 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/183 ,  H01S5/3407 ,  H01S5/3415 ,  H01S2304/04

摘要： The invention is applicable for use in conjunction with a light-emitting semiconductor structure that includes a semiconductor active region of a first conductivity type containing a quantum size region and having a first surface adjacent a semiconductor input region of a second conductivity type that is operative, upon application of electrical potentials with respect to the active and input regions, to produce light emission from the active region. A method is provided that includes the following steps: providing a semiconductor output region that includes a semiconductor auxiliary layer of the first conductivity type adjacent a second surface, which opposes the first surface of the active region, and providing the auxiliary layer as a semiconductor material having a diffusion length for minority carriers of the first conductivity type material that is substantially shorter than the diffusion length for minority carriers of the semiconductor material of the active region.

摘要翻译： 本发明可应用于包括含有量子尺寸区域的第一导电类型的半导体有源区并且具有与可操作的第二导电类型的半导体输入区相邻的第一表面的发光半导体结构， 在相对于有源区和输入区施加电势时，产生来自有源区的光发射。 提供了一种方法，其包括以下步骤：提供半导体输出区域，其包括邻近有源区域的第一表面的第二表面的第一导电类型的半导体辅助层，以及提供辅助层作为半导体材料 对于第一导电类型材料的少数载流子具有比有源区半导体材料的少数载流子的扩散长度短的扩散长度。

公开(公告)号：US08005124B2

公开(公告)日：2011-08-23

申请号：US12587895

申请日：2009-10-14

申请人： Han Wui Then ,  Gabriel Walter ,  Milton Feng ,  Nick Holonyak, Jr.

发明人： Han Wui Then ,  Gabriel Walter ,  Milton Feng ,  Nick Holonyak, Jr.

IPC分类号： H01S5/00

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01S5/0427 ,  H01S5/10 ,  H01S5/14 ,  H01S5/34

摘要： A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.

摘要翻译： 一种响应于高频电输入信号产生宽带宽激光发射的方法，包括以下步骤：提供具有集电极，基极和发射极区的异质结双极晶体管器件; 在所述基极区域中提供至少一个量子尺寸区域，并且在所述光学谐振腔中包围所述基极区域的至少一部分; 将包括高频电输入信号的电信号相对于集电极，基极和发射极区域耦合，以引起来自晶体管器件的激光发射; 并降低晶体管激光器件的运行β，以响应高频电信号增强激光发射的光学带宽。

公开(公告)号：US20100289427A1

公开(公告)日：2010-11-18

申请号：US12799080

申请日：2010-04-16

申请人： Gabriel Walter ,  Nick Holonyak, JR. ,  Milton Feng ,  Chao-Hsin Wu

发明人： Gabriel Walter ,  Nick Holonyak, JR. ,  Milton Feng ,  Chao-Hsin Wu

IPC分类号： H05B37/02 ,  H01L33/04 ,  H01S5/20

CPC分类号： H01S5/34 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06213 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/34313

摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.

摘要翻译： 一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域， 至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。