公开(公告)号：US20130050802A1

公开(公告)日：2013-02-28

申请号：US13597986

申请日：2012-08-29

申请人： Ki-deok BAE ,  Jun-sik HWANG ,  Chang-youl MOON ,  Yoon-sun CHOI ,  Jung-mok BAE ,  Chang-seung LEE ,  Eok-su KIM

发明人： Ki-deok BAE ,  Jun-sik HWANG ,  Chang-youl MOON ,  Yoon-sun CHOI ,  Jung-mok BAE ,  Chang-seung LEE ,  Eok-su KIM

IPC分类号： G02B26/08 ,  G03F7/20

CPC分类号： G02B26/005

摘要： In one embodiment, the electrowetting device includes a first medium; a second medium that is not mixed with the first medium and has a refractive index different from a refractive index of the first medium; an upper electrode that adjusts an angle of a boundary surface between the first medium and the second medium; and a barrier wall that has a side surface surrounding the first and second mediums, allows the upper electrode to be disposed on a portion of the side surface, and has irregular widths.

摘要翻译： 在一个实施例中，电润湿装置包括第一介质; 第二介质，其不与第一介质混合并且具有与第一介质的折射率不同的折射率; 上部电极，其调整所述第一介质和所述第二介质之间的边界面的角度; 并且具有围绕第一和第二介质的侧表面的阻挡壁允许上电极设置在侧表面的一部分上，并且具有不规则的宽度。

公开(公告)号：US20120307357A1

公开(公告)日：2012-12-06

申请号：US13485859

申请日：2012-05-31

申请人： Kyu-hwan Choi ,  Hong-seok Lee ,  Hoon Song ,  Yoon-sun Choi ,  Jung-mok Bae ,  Eok-su Kim

发明人： Kyu-hwan Choi ,  Hong-seok Lee ,  Hoon Song ,  Yoon-sun Choi ,  Jung-mok Bae ,  Eok-su Kim

IPC分类号： G02B27/22

CPC分类号： G02B27/2292 ,  G02B26/005 ,  H04N13/322

摘要： A three-dimensional (3D) image display apparatus and method are provided. The 3D image display apparatus includes an image generating unit configured to generate an image, an active optical device configured to change a propagation path of light containing the generated image, and provide the generated image to multiple viewpoints that are located along a first direction parallel to the image generating unit, and a varifocal lens configured to vary a focal position of the generated image along a second direction away from the image generating unit.

摘要翻译： 提供三维（3D）图像显示装置和方法。 3D图像显示装置包括被配置为生成图像的图像生成单元，被配置为改变包含所生成的图像的光的传播路径的有源光学装置，并且将生成的图像提供给沿着与 所述图像生成单元和变焦透镜被配置为沿着远离所述图像生成单元的第二方向改变所生成的图像的焦点位置。

公开(公告)号：US20120146713A1

公开(公告)日：2012-06-14

申请号：US13167299

申请日：2011-06-23

申请人： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

发明人： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

IPC分类号： H01L29/04 ,  H01L29/786 ,  H03K3/01 ,  H01L21/336

CPC分类号： H01L29/78696 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/78651 ,  H01L29/78681 ,  H01L29/7869

摘要： A transistor includes a first active layer having a first channel region and a second active layer having a second channel region. A first gate of the transistor is configured to control electrical characteristics of at least the first active layer and a second gate is configured to control electrical characteristics of at least the second active layer. A source electrode contacts the first and second active layers. A drain electrode also contacts the first and second active layers.

摘要翻译： 晶体管包括具有第一沟道区的第一有源层和具有第二沟道区的第二有源层。 晶体管的第一栅极被配置为控制至少第一有源层的电特性，并且第二栅极被配置为控制至少第二有源层的电特性。 源电极接触第一和第二有源层。 漏电极还接触第一和第二有源层。

公开(公告)号：US07033915B2

公开(公告)日：2006-04-25

申请号：US10881257

申请日：2004-06-30

申请人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

发明人： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC分类号： H01L21/20

CPC分类号： H01L27/1285 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1296 ,  H01L27/3244

摘要： Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

摘要翻译： 公开了一种在诸如玻璃基板或塑料基板的非晶基底上结晶单晶Si膜的方法。 该方法包括以下步骤：通过一次和二次激光照射处理将激光束选择性地照射到非晶硅膜的像素部分TFT形成区域和外围电路TFT形成区域，从而形成多晶硅膜并照射激光束 通过第三激光照射工艺在形成在多晶硅膜中的晶粒中的一个上形成在非晶硅膜的预定部分上具有所需尺寸的单晶硅区域。 将非晶硅膜局部结晶化为单晶硅膜，从而提高像素部分和外围电路的TFT的特性，同时确保高均匀性。

公开(公告)号：US07026201B2

公开(公告)日：2006-04-11

申请号：US11085953

申请日：2005-03-22

申请人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

发明人： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

IPC分类号： H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

摘要： A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

公开(公告)号：US08779428B2

公开(公告)日：2014-07-15

申请号：US13167299

申请日：2011-06-23

申请人： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

发明人： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/78651 ,  H01L29/78681 ,  H01L29/7869

摘要： A transistor includes a first active layer having a first channel region and a second active layer having a second channel region. A first gate of the transistor is configured to control electrical characteristics of at least the first active layer and a second gate is configured to control electrical characteristics of at least the second active layer. A source electrode contacts the first and second active layers. A drain electrode also contacts the first and second active layers.

摘要翻译： 晶体管包括具有第一沟道区的第一有源层和具有第二沟道区的第二有源层。 晶体管的第一栅极被配置为控制至少第一有源层的电特性，并且第二栅极被配置为控制至少第二有源层的电特性。 源电极接触第一和第二有源层。 漏电极也接触第一和第二有源层。

公开(公告)号：US08704112B2

公开(公告)日：2014-04-22

申请号：US12827266

申请日：2010-06-30

申请人： Duk-hyun Choi ,  Jae-young Choi ,  Eok-su Kim ,  Jong-soo Rhyee

发明人： Duk-hyun Choi ,  Jae-young Choi ,  Eok-su Kim ,  Jong-soo Rhyee

IPC分类号： G08C21/00

CPC分类号： H03K17/96 ,  G06F3/041

摘要： A thermoelectric touch sensor includes a first electrode, a thin film layer provided on the first electrode and including a thermoelectric material, a second electrode provided on the thin film layer, a sensing unit which senses at least one of a current flowing between the first electrode and the second electrode and a voltage applied between the first electrode and the second electrode.

摘要翻译： 热电触摸传感器包括第一电极，设置在第一电极上并包括热电材料的薄膜层，设置在薄膜层上的第二电极，感测单元，其感测在第一电极 和第二电极以及施加在第一电极和第二电极之间的电压。

公开(公告)号：US20130208370A1

公开(公告)日：2013-08-15

申请号：US13617093

申请日：2012-09-14

申请人： Eok-su KIM ,  Jung-mok BAE ,  Hoon SONG ,  Kang-hee WON ,  Deuk-seok CHUNG ,  Kyu-hwan CHOI ,  Yoon-sun CHOI

发明人： Eok-su KIM ,  Jung-mok BAE ,  Hoon SONG ,  Kang-hee WON ,  Deuk-seok CHUNG ,  Kyu-hwan CHOI ,  Yoon-sun CHOI

IPC分类号： G02B5/06 ,  H01B13/00

CPC分类号： G02B5/06 ,  G02B5/045 ,  G02B26/005 ,  G02B26/0883

摘要： A changeable liquid prism array and a method of manufacturing the changeable liquid prism array are provided. The changeable liquid prism array includes a substrate, a wiring layer formed on the substrate, and including conducting wire portions and non-conducting wire portions where the conducting wire portions are not formed, and barrier walls disposed on the wiring layer. The changeable liquid prism array further includes cells defined by the barrier walls, a first liquid included in the cells, and a second liquid located on the first liquid. The changeable liquid prism array further includes side electrodes disposed on side surfaces of the barrier walls, and separated from each other by spaces corresponding to the non-conducting wire portions, and an upper electrode arranged above the barrier walls, and separated from the side electrodes.

摘要翻译： 提供了可变液晶棱镜阵列和制造可变液晶棱镜阵列的方法。 可变液晶棱镜阵列包括基板，形成在基板上的布线层，并且包括未形成导线部分的导线部分和非导线部分，以及设置在布线层上的阻挡壁。 可变液晶棱镜阵列还包括由阻挡壁限定的单元，包含在单元中的第一液体和位于第一液体上的第二液体。 可变液晶棱镜阵列还包括设置在阻挡壁的侧表面上的侧电极，并且彼此分隔开与非导线部分相对应的空间，以及设置在阻挡壁上方的上电极，并与侧电极分离 。

公开(公告)号：US20110180803A1

公开(公告)日：2011-07-28

申请号：US12929453

申请日：2011-01-26

申请人： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

发明人： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Kyung-bae Park

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/78696

摘要： Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain.

摘要翻译： 薄膜晶体管（TFT）及其制造方法。 TFT可以包括在沟道的表面上并与源极和漏极间隔开的浮动沟道，以及形成在浮动沟道上并被设计成确定浮动沟道与源极或漏极之间的距离的绝缘层。

公开(公告)号：US20070218658A1

公开(公告)日：2007-09-20

申请号：US11725123

申请日：2007-03-16

申请人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

发明人： Myung Kwan Ryu ,  Eok Su Kim ,  Kyoung Seok Son ,  Jang Soon Im

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Disclosed are a crystallization pattern, and a method for crystallizing amorphous silicon. The method includes the steps of forming an amorphous silicon film on a glass substrate, forming a crystallization pattern by patterning the amorphous silicon film, and crystallizing the crystallization pattern into polycrystalline silicon by irradiating a laser onto the crystallization pattern. The crystallization pattern includes a peripheral region located within a first distance from an edge of the crystallization pattern, and an internal region located away from the edge of the crystallization pattern by more than the first distance. The internal region is divided into at least one sub-region, each sub-region includes one crystallization inducement pattern, and an edge of each sub-region is located within a second distance from the crystallization inducement pattern.

摘要翻译： 公开了结晶图案和非晶硅结晶的方法。 该方法包括以下步骤：在玻璃基板上形成非晶硅膜，通过图案化非晶硅膜形成结晶图案，并通过将激光照射到结晶​​图案上将结晶图案结晶成多晶硅。 结晶图案包括位于距离结晶图案的边缘第一距离内的周边区域以及远离结晶图案的边缘超过第一距离的内部区域。 内部区域被划分为至少一个子区域，每个子区域包括一个结晶诱导图案，并且每个子区域的边缘位于离结晶诱导图案的第二距离内。