PROCESS FOR PREPARING TRICHLOROSILANE
    1.
    发明申请
    PROCESS FOR PREPARING TRICHLOROSILANE 审中-公开
    制备三氯硅烷的方法

    公开(公告)号:US20140017155A1

    公开(公告)日:2014-01-16

    申请号:US13884326

    申请日:2011-10-13

    IPC分类号: C01B33/107

    摘要: The present invention relates to a process for preparing trichlorosilane and optionally, if required, HCDS and OCTS, by a) in a first step, allowing silicon tetrachloride and silicon to react at a temperature of >800 to 1450° C., b) in a step two, cooling the product stream (PS) thus obtained from step one to obtain a product stream (PG2), c) optionally, in a step three, removing STC and HCDS from the product stream (PG2) to obtain, as a residue or bottom product, a product mixture (PG3), d) optionally, in a step four, removing OCTS from the product stream PG3 from step three, to obtain, as a residue or bottom product, a product mixture (PG4), e) in a step five, reacting the product stream (PG2) originating from step two or the product mixture (PG3) originating from step three or the product mixture (PG4) originating from step four, or a mixture of product streams PG2 and PG3 or a mixture of product streams PG2 and PG4 with hydrogen chloride to obtain a product stream (PHS), and f) in a subsequent step six, removing trichlorosilane from a product stream (PHS) thus obtained, and discharging the remaining STC-containing bottoms or recycling them as a reactant component into step one of the process.

    摘要翻译: 本发明涉及一种制备三氯硅烷的方法,以及任选地,如果需要,HCDS和OCTS,通过a)在第一步中,使四氯化硅和硅在> 800至1450℃的温度下反应,b)在 步骤二,冷却从步骤1获得的产物流(PS)以获得产物流(PG2),c)任选地,在步骤3中,从产物流(PG2)中除去STC和HCDS,以获得作为 残留物或底部产物,产物混合物(PG3),d)任选地,在步骤4中,从步骤3从产物流PG3中除去OCTS,得到作为残余物或底部产物的产物混合物(PG4),e )在步骤5中使来自步骤2的产物流(PG2)或源自步骤3的产物混合物(PG3)或源自步骤4的产物混合物(PG4)或产物流PG2和PG3的混合物或 产物流PG2和PG4与氯化氢的混合物以获得产物流(PHS),和f)in 随后的步骤6,从如此获得的产物流(PHS)中除去三氯硅烷,并排出剩余的含STC的底部物质或将其作为反应物组分再循环到该方法的第一步中。

    Universal Infrastructure for Chemical Processes
    6.
    发明申请
    Universal Infrastructure for Chemical Processes 审中-公开
    化学工艺通用基础设施

    公开(公告)号:US20110163462A1

    公开(公告)日:2011-07-07

    申请号:US13063171

    申请日:2009-05-14

    IPC分类号: C07G99/00 G05B1/00

    摘要: The invention relates to a plant for carrying out chemical processes comprising at least means for directly carrying out the conversion in the form of means for developing products and/or in the form of at least one reactor for the continuous industrial manufacture of products, devices for receiving and/or providing starting materials and/or products and devices for controlling the conversion, which are combined to a single integrated and transportable functional unit serving as infrastructure, preferably in the form of a standardised transport container.

    摘要翻译: 本发明涉及一种用于执行化学过程的设备,该设备至少包括用于以用于开发产品和/或以至少一个反应器的形式直接进行转化的装置,用于产品的连续工业化生产的装置,用于 接收和/或提供用于控制转换的起始材料和/或产品和装置,其被组合到用作基础设施的单个集成和可运输的功能单元,优选地以标准化运输容器的形式。

    PROCESS FOR TREATING CATALYST PRECURSORS
    9.
    发明申请
    PROCESS FOR TREATING CATALYST PRECURSORS 审中-公开
    处理催化剂前体的方法

    公开(公告)号:US20120177557A1

    公开(公告)日:2012-07-12

    申请号:US13383965

    申请日:2010-05-17

    摘要: The invention relates to a process for treating a substantially water-containing amino-functional, polymeric catalyst precursor while retaining the inner porous structure thereof and the outer spherical form thereof to form a catalyst, in which the catalyst precursor is treated at mild temperatures and under reduced pressure to prepare a catalyst having a water content below 2.5% by weight. The process is preferably integrated into an industrial scale process for preparing dichlorosilane, monosilane, silane, or solar silicon or semiconductor silicon from silanes.

    摘要翻译: 本发明涉及一种用于处理基本上含水氨基官能的聚合催化剂前体的方法,同时保持其内部多孔结构和其外部球形形式,以形成催化剂,其中催化剂前体在温和的温度下和在 减压以制备水含量低于2.5重量%的催化剂。 该方法优选整合到从硅烷制备二氯硅烷,硅烷,硅烷或太阳硅或半导体硅的工业规模方法中。

    Preparation of organosilane esters
    10.
    发明授权
    Preparation of organosilane esters 失效
    有机硅烷酯的制备

    公开(公告)号:US07507850B2

    公开(公告)日:2009-03-24

    申请号:US11569585

    申请日:2005-04-04

    IPC分类号: C07F7/04

    CPC分类号: C07F7/188

    摘要: The present invention relates to a specific process for preparing organosilane esters of the formula (I) and a composition comprising more than 98% by weight of organosilane esters of the formula (I) and less than 2.0% by weight of at least one hydrocarbon and to the use of such a composition as precursor for producing a layer or film having a dielectric constant of 1

    摘要翻译: 本发明涉及制备式(I)的有机硅烷酯和包含大于98重量%的式(I)的有机硅烷酯和小于2.0重量%的至少一种烃的组合物的具体方法,以及 使用这种组合物作为制备介电常数为1 <κ4的层或膜的前体。