公开(公告)号：US09124224B2

公开(公告)日：2015-09-01

申请号：US13523793

申请日：2012-06-14

申请人： Yu Sin Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

发明人： Yu Sin Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

IPC分类号： H03F1/30 ,  H03K17/80

CPC分类号： H03F1/30

摘要： Disclosed herein is a power generating circuit including a first transistor in which a second control signal is applied to a control terminal and a first control signal is applied to one end, and which has the other end connected to an output terminal, a second transistor in which the first control signal is applied to a control terminal and the second control signal is applied to one end, and which has the other end connected to the output terminal a third transistor in which one of the first and the second control signals is applied to a control terminal and which has one end grounded, and a fourth transistor in which the other one thereof is applied to a control terminal and which has one end connected to the other end of the third transistor and the other end connected to the output terminal.

摘要翻译： 这里公开了一种发电电路，其包括：第一晶体管，其中将第二控制信号施加到控制端子，并且第一控制信号施加到一端，并且另一端连接到输出端子;第二晶体管， 第一控制信号被施加到控制端，并且第二控制信号被施加到一端，并且另一端连接到输出端，第三晶体管将第一和第二控制信号中的一个施加到 控制端子，其一端接地;第四晶体管，其另一端被施加到控制端子，并且其一端连接到第三晶体管的另一端，另一端连接到输出端子。

公开(公告)号：US20120319671A1

公开(公告)日：2012-12-20

申请号：US13494920

申请日：2012-06-12

申请人： Yu Sin Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

发明人： Yu Sin Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

IPC分类号： G05F3/02

CPC分类号： H04B1/48 ,  H04B2001/485

摘要： The power generating circuit includes: a first transistor having a control terminal to which a second control signal is applied and one end to which a first control signal is applied; and a second transistor having a control terminal to which the first control signal is applied and one end to which the second control signal is applied, wherein the other ends of the first transistor and the second transistor are connected to an output terminal.

摘要翻译： 发电电路包括：具有施加第二控制信号的控制端子的第一晶体管和施加第一控制信号的一端; 以及第二晶体管，其具有施加第一控制信号的控制端子和施加第二控制信号的一端，其中第一晶体管和第二晶体管的另一端连接到输出端子。

公开(公告)号：US08461919B2

公开(公告)日：2013-06-11

申请号：US13016349

申请日：2011-01-28

申请人： Yu Sin Kim ,  Youn Suk Kim ,  Dong Hyun Baek ,  Sun Woo Yoon

发明人： Yu Sin Kim ,  Youn Suk Kim ,  Dong Hyun Baek ,  Sun Woo Yoon

IPC分类号： H01L25/00

CPC分类号： H03K17/94 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.

摘要翻译： 将RF开关和开关控制器形成在单个CMOS基板上的浮动开关电路和浮动电阻器连接到深N型阱基板，N型阱基板和P型阱基板， 从而相对于输入功率增加线性度。 在具有改变RF信号的传输路径的至少一个NMOS（N型金属氧化物半导体）开关的RF开关中，形成在第一深N型阱基板上的N型端子通过浮动电阻器接收驱动电力，P型 形成在第一P型基板上的端子通过浮动电阻器接收主体电力，并且形成在第一P型基板上的两个N型端子通过浮动电阻器接收栅极电力，并且在具有至少一个NMOS开关的开关控制器中 控制RF开关的路径变化的至少一个PMOS（P型金属氧化物半导体）开关，形成在第二深N型阱基板上的N型端子和形成在第一N型基板上的N型端子接收驱动电力 浮动电阻

公开(公告)号：US20120319737A1

公开(公告)日：2012-12-20

申请号：US13494914

申请日：2012-06-12

申请人： Yu Sin Kim ,  Sang Hee Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

发明人： Yu Sin Kim ,  Sang Hee Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

IPC分类号： H03K17/687 ,  H03K5/01

CPC分类号： H03K19/0016 ,  H04B1/44

摘要： Disclosed herein are an inverter and an antenna circuit. The inverter that receives control signals, inverts the control signals including a first control signal, a second control signal, and a third control signal, and outputs the inverted control signals, includes: a first MOS transistor having a gate to which a first control signal is applied and a source that is grounded; a second MOS transistor having a gate to which a third control signal is applied and a source to which a second control signal is applied; and a third MOS transistor having a gate to which a second control signal is applied and a source to which a third control signal is applied, wherein drains of the first MOS transistor, the second MOS transistor, and the third MOS transistor are connected to an output terminal.

摘要翻译： 这里公开了逆变器和天线电路。 接收控制信号的逆变器，使包括第一控制信号，第二控制信号和第三控制信号的控制信号反相并输出反相控制信号，包括：第一MOS晶体管，具有栅极，第一控制信号 被施加和接地源; 具有施加了第三控制信号的栅极和施加第二控制信号的源极的第二MOS晶体管; 以及第三MOS晶体管，其具有施加第二控制信号的栅极和施加了第三控制信号的源极，其中所述第一MOS晶体管，所述第二MOS晶体管和所述第三MOS晶体管的漏极连接到 输出端子。

公开(公告)号：US20110187475A1

公开(公告)日：2011-08-04

申请号：US13016499

申请日：2011-01-28

申请人： Yu Sin KIM ,  Youn Suk KIM ,  Dong Hyun BAEK ,  Sun Woo YOON

发明人： Yu Sin KIM ,  Youn Suk KIM ,  Dong Hyun BAEK ,  Sun Woo YOON

IPC分类号： H01P1/15 ,  H01L27/092

CPC分类号： H01L27/092 ,  H01L2924/0002 ,  H01P1/15 ,  H01L2924/00

摘要： A radio frequency (RF) switch circuit is disclosed to restrict an input signal input to the RF switch from being transferred to a switch controller when a floating resistor is connected to an NMOS FET and a PMOS FET of the RF switch and the switch controller formed through a standard CMOS (Complementary Metal Oxide Semiconductor) process. The RF switch circuit includes: an RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch formed on a single chip substrate and changing a transmission path of an RF signal; a switch controller having at least one NMOS switch and PMOS (P type Metal Oxide Semiconductor) formed on the chip substrate and controlling changing of a path of the RF switch; and a limiter having a deep N type well diode formed on the chip substrate and limiting the level of an RF signal transferred from the RF switch to the switch controller, wherein the NMOS switch of the RF signal receives corresponding power through a floating resistor, and the at least one NMOS switch and PNMOS switch of the switch controller receives corresponding power through a floating resistor.

摘要翻译： 公开了射频（RF）开关电路，用于将浮动电阻器连接到RF开关的NMOS FET和PMOS FET并形成开关控制器时，将输入到RF开关的输入信号限制为传送到开关控制器 通过标准CMOS（互补金属氧化物半导体）工艺。 RF开关电路包括：具有至少一个NMOS（N型金属氧化物半导体）开关的RF开关，其形成在单个芯片衬底上并改变RF信号的传输路径; 开关控制器，具有形成在芯片基板上的至少一个NMOS开关和PMOS（P型金属氧化物半导体），并控制RF开关的路径的变化; 以及限制器，其具有形成在芯片基板上的深N型阱二极管，并且限制从RF开关传送到开关控制器的RF信号的电平，其中RF信号的NMOS开关通过浮动电阻器接收相应的功率，以及 开关控制器的至少一个NMOS开关和PNMOS开关通过浮动电阻器接收相应的功率。

公开(公告)号：US07372336B2

公开(公告)日：2008-05-13

申请号：US11323744

申请日：2005-12-30

申请人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

发明人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

IPC分类号： H03F3/14

CPC分类号： H03F3/604 ,  H03F1/02 ,  H03F1/22 ,  H03F3/195 ,  H03F3/265 ,  H03F2200/537 ,  H03F2200/541

摘要： A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.

摘要翻译： 本文提供了具有提高的效率的小尺寸片上互补金属氧化物半导体（CMOS）功率放大器。 片上CMOS功率放大器能够通过增强K因子来提高效率并使其输出最大化，这可能导致具有分布式有源变压器结构的功率放大器的问题。 片上CMOS功率放大器具有改进的效率并以小尺寸制造，片上CMOS功率放大器包括位于第一层的初级绕组，位于第二层的次级绕组，其位于第二层的上部 第一层，次级绕组对应于初级绕组的位置，以及用于将第二绕组彼此联接的横截面。

公开(公告)号：US20120255763A1

公开(公告)日：2012-10-11

申请号：US13423363

申请日：2012-03-19

申请人： Dong-Hyun Baek ,  Byoung-Ok Lee ,  Jung-Hyun Cho ,  Eun-Su Kim

发明人： Dong-Hyun Baek ,  Byoung-Ok Lee ,  Jung-Hyun Cho ,  Eun-Su Kim

IPC分类号： H05K1/00 ,  H01P11/00

CPC分类号： G06K19/07783 ,  G06K19/07722 ,  G06K19/07769 ,  G06K19/07771 ,  Y10T29/49016

摘要： A card-type information recording medium having an embedded antenna for NFC communication is provided. The card-type information recording medium includes: a PCB that has a loop antenna pattern and a routing pattern formed on the top surface and the bottom surface thereof through the use of an etching process; an NFC communication unit and a USIM card unit that are horizontally mounted on the top of the PCB; and a molding material that is formed on the top of the PCB to cover the NFC communication unit and the USIM card unit. Accordingly, it is possible to perform functions of NFC and RFID read/tag by only mounting a USIM device thereon without adding any module or any constituent having an antenna function to a mobile terminal.

摘要翻译： 提供一种具有用于NFC通信的嵌入式天线的卡型信息记录介质。 卡式信息记录介质包括：通过使用蚀刻工艺在其顶表面和底表面上形成环形天线图案和布线图案的PCB; 水平安装在PCB顶部的NFC通信单元和USIM卡单元; 以及形成在PCB的顶部以覆盖NFC通信单元和USIM卡单元的成型材料。 因此，通过仅在其上安装USIM设备就可以执行NFC和RFID读取/标签的功能，而不需要向移动终端添加具有天线功能的任何模块或任何组件。

公开(公告)号：US20060170503A1

公开(公告)日：2006-08-03

申请号：US11323744

申请日：2005-12-30

申请人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

发明人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

IPC分类号： H03F3/14

CPC分类号： H03F3/604 ,  H03F1/02 ,  H03F1/22 ,  H03F3/195 ,  H03F3/265 ,  H03F2200/537 ,  H03F2200/541

摘要： A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.

摘要翻译： 本文提供了具有提高的效率的小尺寸片上互补金属氧化物半导体（CMOS）功率放大器。 片上CMOS功率放大器能够通过增强K因子来提高效率并使其输出最大化，这可能导致具有分布式有源变压器结构的功率放大器的问题。 片上CMOS功率放大器具有改进的效率并以小尺寸制造，片上CMOS功率放大器包括位于第一层的初级绕组，位于第二层的次级绕组，其位于第二层的上部 第一层，次级绕组对应于初级绕组的位置，以及用于将第二绕组彼此联接的横截面。

公开(公告)号：US09141905B2

公开(公告)日：2015-09-22

申请号：US13423363

申请日：2012-03-19

申请人： Dong-Hyun Baek ,  Byoung-Ok Lee ,  Jung-Hyun Cho ,  Eun-Su Kim

发明人： Dong-Hyun Baek ,  Byoung-Ok Lee ,  Jung-Hyun Cho ,  Eun-Su Kim

IPC分类号： G06K19/06 ,  G06K19/077

CPC分类号： G06K19/07783 ,  G06K19/07722 ,  G06K19/07769 ,  G06K19/07771 ,  Y10T29/49016

摘要： A card-type information recording medium having an embedded antenna for NFC communication is provided. The card-type information recording medium includes: a PCB that has a loop antenna pattern and a routing pattern formed on the top surface and the bottom surface thereof through the use of an etching process; an NFC communication unit and a USIM card unit that are horizontally mounted on the top of the PCB; and a molding material that is formed on the top of the PCB to cover the NFC communication unit and the USIM card unit. Accordingly, it is possible to perform functions of NFC and RFID read/tag by only mounting a USIM device thereon without adding any module or any constituent having an antenna function to a mobile terminal.

摘要翻译： 提供一种具有用于NFC通信的嵌入式天线的卡型信息记录介质。 卡式信息记录介质包括：通过使用蚀刻工艺在其顶表面和底表面上形成环形天线图案和布线图案的PCB; 水平安装在PCB顶部的NFC通信单元和USIM卡单元; 以及形成在PCB的顶部以覆盖NFC通信单元和USIM卡单元的成型材料。 因此，通过仅在其上安装USIM设备就可以执行NFC和RFID读取/标签的功能，而不需要向移动终端添加具有天线功能的任何模块或任何组件。

公开(公告)号：US08866466B2

公开(公告)日：2014-10-21

申请号：US13494920

申请日：2012-06-12

申请人： Yu Sin Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

发明人： Yu Sin Kim ,  Dong Hyun Baek ,  Sun Woo Yun ,  Sung Hwan Park

IPC分类号： G05F3/04 ,  H04B1/48

CPC分类号： H04B1/48 ,  H04B2001/485

摘要： The power generating circuit includes: a first transistor having a control terminal to which a second control signal is applied and one end to which a first control signal is applied; and a second transistor having a control terminal to which the first control signal is applied and one end to which the second control signal is applied, wherein the other ends of the first transistor and the second transistor are connected to an output terminal.

摘要翻译： 发电电路包括：具有施加第二控制信号的控制端子的第一晶体管和施加第一控制信号的一端; 以及第二晶体管，其具有施加第一控制信号的控制端子和施加第二控制信号的一端，其中第一晶体管和第二晶体管的另一端连接到输出端子。