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公开(公告)号：US08866466B2
公开(公告)日：2014-10-21
申请号：US13494920
申请日：2012-06-12
申请人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
发明人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
CPC分类号： H04B1/48 , H04B2001/485
摘要： The power generating circuit includes: a first transistor having a control terminal to which a second control signal is applied and one end to which a first control signal is applied; and a second transistor having a control terminal to which the first control signal is applied and one end to which the second control signal is applied, wherein the other ends of the first transistor and the second transistor are connected to an output terminal.
摘要翻译： 发电电路包括：具有施加第二控制信号的控制端子的第一晶体管和施加第一控制信号的一端; 以及第二晶体管，其具有施加第一控制信号的控制端子和施加第二控制信号的一端，其中第一晶体管和第二晶体管的另一端连接到输出端子。
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公开(公告)号：US20120319737A1
公开(公告)日：2012-12-20
申请号：US13494914
申请日：2012-06-12
申请人： Yu Sin Kim , Sang Hee Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
发明人： Yu Sin Kim , Sang Hee Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
IPC分类号： H03K17/687 , H03K5/01
CPC分类号： H03K19/0016 , H04B1/44
摘要： Disclosed herein are an inverter and an antenna circuit. The inverter that receives control signals, inverts the control signals including a first control signal, a second control signal, and a third control signal, and outputs the inverted control signals, includes: a first MOS transistor having a gate to which a first control signal is applied and a source that is grounded; a second MOS transistor having a gate to which a third control signal is applied and a source to which a second control signal is applied; and a third MOS transistor having a gate to which a second control signal is applied and a source to which a third control signal is applied, wherein drains of the first MOS transistor, the second MOS transistor, and the third MOS transistor are connected to an output terminal.
摘要翻译： 这里公开了逆变器和天线电路。 接收控制信号的逆变器，使包括第一控制信号，第二控制信号和第三控制信号的控制信号反相并输出反相控制信号，包括：第一MOS晶体管，具有栅极，第一控制信号 被施加和接地源; 具有施加了第三控制信号的栅极和施加第二控制信号的源极的第二MOS晶体管; 以及第三MOS晶体管，其具有施加第二控制信号的栅极和施加了第三控制信号的源极，其中所述第一MOS晶体管，所述第二MOS晶体管和所述第三MOS晶体管的漏极连接到 输出端子。
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公开(公告)号：US09124224B2
公开(公告)日：2015-09-01
申请号：US13523793
申请日：2012-06-14
申请人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
发明人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
CPC分类号： H03F1/30
摘要： Disclosed herein is a power generating circuit including a first transistor in which a second control signal is applied to a control terminal and a first control signal is applied to one end, and which has the other end connected to an output terminal, a second transistor in which the first control signal is applied to a control terminal and the second control signal is applied to one end, and which has the other end connected to the output terminal a third transistor in which one of the first and the second control signals is applied to a control terminal and which has one end grounded, and a fourth transistor in which the other one thereof is applied to a control terminal and which has one end connected to the other end of the third transistor and the other end connected to the output terminal.
摘要翻译： 这里公开了一种发电电路，其包括：第一晶体管，其中将第二控制信号施加到控制端子，并且第一控制信号施加到一端，并且另一端连接到输出端子;第二晶体管， 第一控制信号被施加到控制端，并且第二控制信号被施加到一端，并且另一端连接到输出端，第三晶体管将第一和第二控制信号中的一个施加到 控制端子，其一端接地;第四晶体管，其另一端被施加到控制端子，并且其一端连接到第三晶体管的另一端，另一端连接到输出端子。
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公开(公告)号：US20120319671A1
公开(公告)日：2012-12-20
申请号：US13494920
申请日：2012-06-12
申请人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
发明人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
IPC分类号： G05F3/02
CPC分类号： H04B1/48 , H04B2001/485
摘要： The power generating circuit includes: a first transistor having a control terminal to which a second control signal is applied and one end to which a first control signal is applied; and a second transistor having a control terminal to which the first control signal is applied and one end to which the second control signal is applied, wherein the other ends of the first transistor and the second transistor are connected to an output terminal.
摘要翻译： 发电电路包括：具有施加第二控制信号的控制端子的第一晶体管和施加第一控制信号的一端; 以及第二晶体管，其具有施加第一控制信号的控制端子和施加第二控制信号的一端，其中第一晶体管和第二晶体管的另一端连接到输出端子。
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公开(公告)号：US08742813B2
公开(公告)日：2014-06-03
申请号：US13494914
申请日：2012-06-12
申请人： Yu Sin Kim , Sang Hee Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
发明人： Yu Sin Kim , Sang Hee Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
IPC分类号： H03K19/20 , H03K19/0948
CPC分类号： H03K19/0016 , H04B1/44
摘要： An inverter and an antenna circuit. The inverter that receives control signals including a first control signal, a second control signal, and a third control signal, inverts the first control signal, and outputs the inverted first control signal, includes: a first MOS transistor having a gate to which the first control signal is applied and a source that is grounded; a second MOS transistor having a gate to which the third control signal is applied and a source to which the second control signal is applied; and a third MOS transistor having a gate to which the second control signal is applied and a source to which the third control signal is applied, wherein drains of the first MOS transistor, the second MOS transistor, and the third MOS transistor are connected to an output terminal.
摘要翻译： 逆变器和天线电路。 接收包括第一控制信号，第二控制信号和第三控制信号的控制信号的逆变器反转第一控制信号，并输出反相的第一控制信号，包括：第一MOS晶体管，具有栅极，第一 施加控制信号和接地源; 具有施加了第三控制信号的栅极和施加第二控制信号的源极的第二MOS晶体管; 以及第三MOS晶体管，其具有施加了第二控制信号的栅极和施加了第三控制信号的源极，其中第一MOS晶体管，第二MOS晶体管和第三MOS晶体管的漏极连接到 输出端子。
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公开(公告)号：US20120319773A1
公开(公告)日：2012-12-20
申请号：US13523793
申请日：2012-06-14
申请人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
发明人： Yu Sin Kim , Dong Hyun Baek , Sun Woo Yun , Sung Hwan Park
CPC分类号： H03F1/30
摘要： Disclosed herein is a power generating circuit including a first transistor in which a second control signal is applied to a control terminal and a first control signal is applied to one end, and which has the other end connected to an output terminal, a second transistor in which the first control signal is applied to a control terminal and the second control signal is applied to one end, and which has the other end connected to the output terminal a third transistor in which one of the first and the second control signals is applied to a control terminal and which has one end grounded, and a fourth transistor in which the other one thereof is applied to a control terminal and which has one end connected to the other end of the third transistor and the other end connected to the output terminal.
摘要翻译： 这里公开了一种发电电路，其包括：第一晶体管，其中将第二控制信号施加到控制端子，并且第一控制信号施加到一端，并且另一端连接到输出端子;第二晶体管， 第一控制信号被施加到控制端，并且第二控制信号被施加到一端，并且另一端连接到输出端，第三晶体管将第一和第二控制信号中的一个施加到 控制端子，其一端接地;第四晶体管，其另一端被施加到控制端子，并且其一端连接到第三晶体管的另一端，另一端连接到输出端子。
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公开(公告)号：US08476959B2
公开(公告)日：2013-07-02
申请号：US13016499
申请日：2011-01-28
申请人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
发明人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
CPC分类号： H01L27/092 , H01L2924/0002 , H01P1/15 , H01L2924/00
摘要： An RF switch circuit includes an RF switch including a first NMOS switch formed on a chip substrate, a switch controller including a second NMOS switch and a PMOS switch formed on the substrate, for controlling the RF switch, and a limiter including a deep N-type well diode formed on the substrate, for limiting an RF signal level transferred from the RF switch to the switch controller through the substrate. The first NMOS switch includes a first N-type terminal formed on a deep N-type well substrate formed on the substrate, for receiving a driving power through a first floating resistor, a P-type terminal for receiving a body power through a second floating resistor, and two second N-type terminals for receiving a gate power through a third floating resistor. The P-type and two second N-type terminals are formed on a P-type substrate formed on the deep N-type well substrate.
摘要翻译： RF开关电路包括RF开关，其包括形成在芯片基板上的第一NMOS开关，开关控制器，包括形成在基板上的第二NMOS开关和PMOS开关，用于控制RF开关;以及限幅器， 形成在衬底上的阱型二极管，用于限制通过衬底从RF开关传送到开关控制器的RF信号电平。 第一NMOS开关包括形成在形成在衬底上的深N型阱衬底上的第一N型端子，用于通过第一浮动电阻器接收驱动电力; P型端子，用于通过第二浮置 电阻器和两个第二N型端子，用于通过第三浮动电阻器接收栅极电力。 在深N型阱基板上形成的P型基板上形成有P型和2端的N型端子。
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公开(公告)号：US08461919B2
公开(公告)日：2013-06-11
申请号：US13016349
申请日：2011-01-28
申请人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
发明人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
IPC分类号： H01L25/00
CPC分类号： H03K17/94 , H01L2924/0002 , H01L2924/00
摘要： A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.
摘要翻译： 将RF开关和开关控制器形成在单个CMOS基板上的浮动开关电路和浮动电阻器连接到深N型阱基板，N型阱基板和P型阱基板， 从而相对于输入功率增加线性度。 在具有改变RF信号的传输路径的至少一个NMOS（N型金属氧化物半导体）开关的RF开关中，形成在第一深N型阱基板上的N型端子通过浮动电阻器接收驱动电力，P型 形成在第一P型基板上的端子通过浮动电阻器接收主体电力，并且形成在第一P型基板上的两个N型端子通过浮动电阻器接收栅极电力，并且在具有至少一个NMOS开关的开关控制器中 控制RF开关的路径变化的至少一个PMOS（P型金属氧化物半导体）开关，形成在第二深N型阱基板上的N型端子和形成在第一N型基板上的N型端子接收驱动电力 浮动电阻
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