Invention Grant
US07372336B2 Small-sized on-chip CMOS power amplifier having improved efficiency
有权
具有提高效率的小尺寸片上CMOS功率放大器
- Patent Title: Small-sized on-chip CMOS power amplifier having improved efficiency
- Patent Title (中): 具有提高效率的小尺寸片上CMOS功率放大器
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Application No.: US11323744Application Date: 2005-12-30
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Publication No.: US07372336B2Publication Date: 2008-05-13
- Inventor: Jae-Sup Lee , Hyun-Il Kang , Seong-Soo Lee , Holger Lothar , Ju-Hyun Ko , Dong-Hyun Baek , Song-Cheol Hong
- Applicant: Jae-Sup Lee , Hyun-Il Kang , Seong-Soo Lee , Holger Lothar , Ju-Hyun Ko , Dong-Hyun Baek , Song-Cheol Hong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: The Farrell Law Firm, PC
- Priority: KR10-2004-0118337 20041231; KR10-2005-0026142 20050329
- Main IPC: H03F3/14
- IPC: H03F3/14

Abstract:
A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.
Public/Granted literature
- US20060170503A1 Small-sized on-chip CMOS power amplifier having improved efficiency Public/Granted day:2006-08-03
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