公开(公告)号：US20240113631A1

公开(公告)日：2024-04-04

申请号：US18204274

申请日：2023-05-31

申请人： Diodes Incorporated

发明人： Zheng Ying ,  Feng Wang ,  Bo Chen

IPC分类号： H02M3/335 ,  H02M1/08

CPC分类号： H02M3/33523 ,  H02M1/083 ,  H02M3/33573

摘要： A circuit for Flyback switching power supply includes a transformer having a primary winding, a secondary winding and an auxiliary winding, a power switch coupled to a dotted terminal of the primary winding, and a switch. A first terminal of the switch is connected to a non-dotted terminal of the auxiliary winding through a capacitor, a second terminal of the switch and a dotted terminal of the auxiliary winding are connected, respectively, to a ground. A common node of the capacitor and the auxiliary winding is configured to connect to a non-dotted terminal of the primary winding. A control circuit is configured to generate, based on a voltage at the common node of the capacitor and the auxiliary winding, a control signal to control the switch in order to achieve zero voltage switch (ZVS) of the power switch.

公开(公告)号：US20240113167A1

公开(公告)日：2024-04-04

申请号：US18534917

申请日：2023-12-11

申请人： Diodes Incorporated

发明人： Tao Long ,  Pin-Hao Huang ,  Ze Rui Chen

IPC分类号： H01L29/06 ,  H01L29/04 ,  H01L29/66

CPC分类号： H01L29/0684 ,  H01L29/04 ,  H01L29/66121

摘要： A method of manufacturing a semiconductor structure forming a first diffusion layer on a first electrode layer and forming a core layer over the first diffusion layer. A second diffusion layer is formed over the core layer. A plurality of diffusion regions are formed in the second diffusion layer. A second electrode layer is formed over the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.

公开(公告)号：US20230412081A1

公开(公告)日：2023-12-21

申请号：US18461968

申请日：2023-09-06

申请人： Diodes Incorporated

发明人： Wenliang Chen ,  Jiansong Chen

IPC分类号： H02M3/158 ,  H02M3/07 ,  H03K3/017

CPC分类号： H02M3/1582 ,  H02M3/07 ,  H03K3/017

摘要： A switched mode power supply (SMPS) includes a first switch, a second switch connected, at a switching node, in series with the first switch, and an inductor coupled between the switching node and an output node for providing an inductor current, at the output node. The SMPS also includes an oscillator circuit for providing a clock signal characterized by an oscillating frequency, an adaptive minimum duty-cycle circuit configured to receive an error voltage signal and to generate a current signal to vary the oscillating frequency of the clock signal in response to the error voltage signal, wherein the error voltage signal is based on an output signal at the output node, and a pulse-width modulation (PWM) circuit configured to receive the error voltage signal and the clock signal and to provide a switching control signal to control the first switch and the second switch.

公开(公告)号：US20230402976A1

公开(公告)日：2023-12-14

申请号：US17836880

申请日：2022-06-09

申请人： Diodes Incorporated

发明人： Rohit Arora ,  Dharma R. Kadam

IPC分类号： H03F3/217

CPC分类号： H03F3/2171 ,  H03F2200/372 ,  H03F2200/03

摘要： An output driver with slew rate control includes an output transistor that includes a control terminal coupled to a switching input signal, a drain node coupled to the output node for coupling to a load device, and a source node coupled to a reference voltage. The output driver also has a slew control circuit including a current source coupled in series at a connection node with parallelly connected first switch transistor and second switch transistor. The connection node is coupled to the control terminal of the output transistor. The first switch transistor has a control terminal coupled to the switching input signal. The second switch transistor has a control terminal that is coupled to either the switching input signal or a dynamically modulated switching input signal, depending on a current direction at the output node.

公开(公告)号：US20230343836A1

公开(公告)日：2023-10-26

申请号：US18334879

申请日：2023-06-14

申请人： Diodes Incorporated

发明人： Kolins Chao ,  John Huang

IPC分类号： H01L29/417 ,  H01L29/872 ,  H01L29/40 ,  H01L23/00

CPC分类号： H01L29/417 ,  H01L29/8725 ,  H01L29/404 ,  H01L24/13 ,  H01L29/407 ,  H01L2224/13155 ,  H01L2224/13021 ,  H01L2224/13144

摘要： A method for forming a semiconductor Schottky rectifier device includes providing a semiconductor substrate, forming a hard mask for trench etch including openings for guard rings, an anode region, and a cathode region, and etching semiconductor epitaxial material layer to form a plurality of trenches. The method also includes forming a first dielectric layer and depositing a polysilicon layer, performing an anisotropic etch of the polysilicon layer to form polysilicon elements on sidewalls of the trench, and depositing and etching a second dielectric layer to expose a Schottky diode region and a bottom region of the trench in the cathode region. The method further includes depositing a first metal layer and performing a thermal treatment to form metal silicide in the Schottky diode region and the cathode region and forming a second metal layer and separating the second metal layer into an anode electrode and a cathode electrode.

公开(公告)号：US11764672B1

公开(公告)日：2023-09-19

申请号：US17809377

申请日：2022-06-28

申请人： Diodes Incorporated

发明人： Sin Luen Cheung ,  Chi Wa Lo ,  Yiu Ting Chou

IPC分类号： H02M3/07 ,  G06F13/42 ,  G06F13/40

CPC分类号： H02M3/07 ,  G06F13/4022 ,  G06F13/4282

摘要： Systems and methods for signal boosting in serial interfaces are provided. In some implementations, a system for boosting signals comprises boosting circuitry. The boosting circuitry may comprise at least one boosting capacitor configured to be operatively coupled to a voltage supply during a charging phase and configured to be operatively coupled to the at least one line of a signal transmission line during a discharging phase, wherein, during the discharging phase, the at least one boosting capacitor boosts a voltage of the one or more signals transmitted on the at least one line. The boosting circuitry may comprise switching circuitry configured to switch the at least one boosting capacitor between from being operatively coupled to the voltage supply to being operatively coupled to the at least one line of the signal transmission line.

公开(公告)号：US20230155505A1

公开(公告)日：2023-05-18

申请号：US17525592

申请日：2021-11-12

申请人： Diodes Incorporated

发明人： Wenliang Chen ,  Jiansong Chen

IPC分类号： H02M3/158 ,  H03K3/017 ,  H02M3/07

CPC分类号： H02M3/1582 ,  H03K3/017 ,  H02M3/07

摘要： A method for a switched mode power supply (SMPS) includes providing an error voltage signal based on a difference between a sampled output voltage of the SMPS and a target voltage, and generating a clock signal characterized by an oscillating frequency; generating a switching control signal based on the error voltage signal and the clock signal using pulse-width modulation (PWM). The method further includes varying the oscillating frequency of the clock signal according to the error voltage signal in a current generating circuit, and applying the switching control signal to control the power switches of the SMPS.

公开(公告)号：USD969764S1

公开(公告)日：2022-11-15

申请号：US29813451

申请日：2021-10-28

申请人： Diodes Incorporated

设计人： Li-Ju Huang ,  Michael Yimin Zhang

公开(公告)号：US20220320331A1

公开(公告)日：2022-10-06

申请号：US17218415

申请日：2021-03-31

申请人： Diodes Incorporated

发明人： Chiao-Shun Chuang ,  Tsung-Wei Pai ,  Yun-Pu Ku

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/423

摘要： A split-gate trench device chip has an active region in which a plurality of active trenches are disposed. The active region is enclosed by termination trenches disposed in a termination region, which extends to the edges of the chip. A gate metal lead is disposed on the device surface. The gate metal lead makes contact to gate electrodes in the active trenches through contact holes disposed in the active region. A source or a drain metal lead is also disposed on the surface. The source or the drain metal lead makes contact to the field plate electrodes through contact holes disposed outside the active region. Each active trench in the active region has a first end merge into a first termination trench and a second end separated from an adjacent second termination trench.

公开(公告)号：US20220085715A1

公开(公告)日：2022-03-17

申请号：US17515761

申请日：2021-11-01

申请人： Diodes Incorporated

发明人： Wei Chuan Su ,  Feng-Jung Huang ,  Yuan-Hung Lo

IPC分类号： H02M1/44 ,  H02M3/335 ,  H02M1/08

摘要： A power converter includes a power switch controlling current flow in the power converter and a variable capacitance coupled in parallel to the power switch. The variable capacitance is configured to add a frequency jitter to the power converter.