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    PHASE CHANGE RANDOM ACCESS MEMORY FOR ACTIVELY REMOVING RESIDUAL HEAT AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    PHASE CHANGE RANDOM ACCESS MEMORY FOR ACTIVELY REMOVING RESIDUAL HEAT AND METHOD OF MANUFACTURING THE SAME 有权
    相位变化随机访问存储器，用于动态移除残留热量及其制造方法

    公开(公告)号：US20100288993A1

    公开(公告)日：2010-11-18

    申请号：US12494530

    申请日：2009-06-30

    申请人： Dae Ho RHO

    发明人： Dae Ho RHO

    IPC分类号： H01L47/00 ,  H01L21/00

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/1675

    摘要： A phase change random access memory for actively removing residual heat and a method of manufacturing the same are presented. The phase change random access memory includes a semiconductor substrate, a phase change pattern, a heating electrode and a cooling electrode. The phase change pattern is on the semiconductor substrate. The heating electrode is electrically coupled to the phase change pattern for heating the phase change pattern. The cooling electrode is electrically coupled to the phase change pattern for removing residual heat from the phase change pattern.

    摘要翻译： 提出了一种主动去除余热的相变随机存取存储器及其制造方法。 相变随机存取存储器包括半导体衬底，相变图案，加热电极和冷却电极。 相变图案在半导体衬底上。 加热电极电耦合到用于加热相变图案的相变图案。 冷却电极电耦合到相变图案，以从相变图案去除剩余热量。

    PHASE CHANGE MEMORY DEVICE HAVING PROTECTIVE LAYER FOR PROTECTING PHASE CHANGE MATERIAL AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    PHASE CHANGE MEMORY DEVICE HAVING PROTECTIVE LAYER FOR PROTECTING PHASE CHANGE MATERIAL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    具有用于保护相变材料的保护层的相变存储器件及其制造方法

    公开(公告)号：US20090242867A1

    公开(公告)日：2009-10-01

    申请号：US12246653

    申请日：2008-10-07

    申请人： Dae Ho Rho

    发明人： Dae Ho Rho

    IPC分类号： H01L45/00

    CPC分类号： H01L45/144 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/16 ,  H01L45/1666

    摘要： A phase change memory device includes a semiconductor substrate, a plurality of bottom electrodes formed on the substrate, a plurality of phase change structures formed on the semiconductor substrate, each respectively contacting one of the bottom electrodes, and each having a phase change material layer and a top electrode stacked one upon the other, and a protective layer formed to a substantially uniform thickness on surfaces of the plurality of phase change structures and the semiconductor substrate, wherein the protective layer contains diffusion barrier ions.

    摘要翻译： 相变存储器件包括半导体衬底，形成在衬底上的多个底部电极，形成在半导体衬底上的多个相变结构，每个相变结构分别接触一个底部电极，并且每个具有相变材料层和 在多个相变结构和半导体衬底的表面上形成为基本上均匀厚度的保护层，其中保护层含有扩散阻挡离子。

    Phase change random access memory for actively removing residual heat and method of manufacturing the same
    5.
    发明授权
    Phase change random access memory for actively removing residual heat and method of manufacturing the same 有权
    相变随机存取存储器，用于主动去除残余热量及其制造方法

    公开(公告)号：US08013318B2

    公开(公告)日：2011-09-06

    申请号：US12494530

    申请日：2009-06-30

    申请人： Dae Ho Rho

    发明人： Dae Ho Rho

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/1286 ,  H01L45/1675

    摘要： A phase change random access memory for actively removing residual heat and a method of manufacturing the same are presented. The phase change random access memory includes a semiconductor substrate, a phase change pattern, a heating electrode and a cooling electrode. The phase change pattern is on the semiconductor substrate. The heating electrode is electrically coupled to the phase change pattern for heating the phase change pattern. The cooling electrode is electrically coupled to the phase change pattern for removing residual heat from the phase change pattern.

    摘要翻译： 提出了一种主动去除余热的相变随机存取存储器及其制造方法。 相变随机存取存储器包括半导体衬底，相变图案，加热电极和冷却电极。 相变图案在半导体衬底上。 加热电极电耦合到用于加热相变图案的相变图案。 冷却电极电耦合到相变图案，以从相变图案去除剩余热量。

    MoSi2-Si3N4 composite coating and manufacturing method thereof
    6.
    发明授权
    MoSi2-Si3N4 composite coating and manufacturing method thereof 失效
    MoSi2-Si3N4复合涂层及其制备方法

    公开(公告)号：US07622152B2

    公开(公告)日：2009-11-24

    申请号：US11482840

    申请日：2006-07-10

    申请人： Jae Soo Kim ,  Kyeung Ho Kim ,  Ji Young Byun ,  Jin-Kook Yoon ,  Doo Yong Kim ,  Jong Kown Lee ,  Jong Chul Shin ,  Dae Ho Rho

    发明人： Jae Soo Kim ,  Kyeung Ho Kim ,  Ji Young Byun ,  Jin-Kook Yoon ,  Doo Yong Kim ,  Jong Kown Lee ,  Jong Chul Shin ,  Dae Ho Rho

    IPC分类号： C23C16/00 ,  C23C16/26 ,  B05D1/40 ,  B05D3/02 ,  B05D3/04

    CPC分类号： C23C8/02 ,  C23C10/02 ,  C23C12/00 ,  Y10T428/31678

    摘要： A MoSi2—Si3N4 composite coating which is coated on a surface of base materials. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a MoSi2—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the MosSi3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the MoSi2—Si3N4 composite diffusion layer.

    摘要翻译： 涂覆在基材表面的MoSi2-Si3N4复合涂层。 可以通过在基材表面上气相沉积氮形成Mo2N扩散层并通过在硅上气相沉积形成MoSi2-Si3N4复合涂层来形成基体材料表面上的MoSi2-Si3N4复合涂层 Mo2N扩散层的表面或基体材料表面的MoSi2-Si3N4复合涂层可以通过CVD法在基材表面上气相沉积硅形成MoSi 2扩散层而形成， 通过在高纯度氢或氩气氛下加热，将MoSi 2扩散层进入Mo5Si3扩散层，通过CVD法在MosSi 3扩散层的表面上气相沉积形成MoSi 2 -Si 3 N 4复合扩散层，并形成 MoSi2-Si3N4复合涂层，通过在MoSi2-Si3N4复合扩散层的表面上气相沉积硅。