POTENTIAL CONTROL OF HEAT SINK IN SOLID-STATE LIGHT DEVICE
    1.
    发明申请
    POTENTIAL CONTROL OF HEAT SINK IN SOLID-STATE LIGHT DEVICE 审中-公开
    固体灯装置中的散热器的潜在控制

    公开(公告)号:US20120119647A1

    公开(公告)日:2012-05-17

    申请号:US12944642

    申请日:2010-11-11

    Applicant: Chih-Peng Hsu

    Inventor: Chih-Peng Hsu

    Abstract: Higher power light emitting diode (LED) modules are thermally managed by thermal coupling to a heat sink. An ion wind fan can be used to provide forced convection for the heat sink. In such a light device, in one embodiment the present invention includes electrically connecting the heat sink to the low voltage terminal of the LED driver, thereby controlling the potential of the heat sink.

    Abstract translation: 高功率发光二极管(LED)模块通过热耦合到散热器进行热管理。 离子风扇可用于为散热器提供强制对流。 在这种光装置中,在一个实施例中,本发明包括将散热器电连接到LED驱动器的低电​​压端子,从而控制散热器的电位。

    PLANAR LIGHT SOURCE APPARATUS HAVING REFLECTIVE SURFACES
    2.
    发明申请
    PLANAR LIGHT SOURCE APPARATUS HAVING REFLECTIVE SURFACES 有权
    具有反射表面的平面光源装置

    公开(公告)号:US20120092861A1

    公开(公告)日:2012-04-19

    申请号:US13332379

    申请日:2011-12-21

    CPC classification number: F21V7/05 F21S8/00 F21Y2105/10 F21Y2115/10

    Abstract: A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements.

    Abstract translation: 平面光源装置包括设置在公共平面中的多个细长的照明元件,以及垂直于公共平面布置并面向照明元件的多个反射镜。 照明元件彼此间隔开。 照明元件面向相同的方向。 镜面反光镜框架照明元件。 镜面反射器各自具有面向照明元件的反射表面。 反射面垂直于公共平面。 反射器之一和其最近的照明元件之间的距离最大为两个相邻照明元件之间的距离的一半。

    Light emitting device with high light extraction efficiency
    3.
    发明授权
    Light emitting device with high light extraction efficiency 失效
    具有高光提取效率的发光装置

    公开(公告)号:US07994515B2

    公开(公告)日:2011-08-09

    申请号:US12344647

    申请日:2008-12-29

    CPC classification number: H01L33/38 H01L33/20 H01L33/42

    Abstract: An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode electrically is connected with the first-type semiconductor layer. The first electrode includes a first contact pad and a current induced electrode spaced apart and insulated from each other. The second electrode has an opposite polarity with respect to the first electrode. The second electrode includes a transparent conductive layer formed on and electrically connected with the second-type semiconductor layer and a metallic conductive layer formed on the transparent conductive layer and in electrical contact therewith.

    Abstract translation: 示例性固态发光器件包括基板,发光结构,第一电极和第二电极彼此具有相反的极性。 发光结构包括第一类型半导体层,第二类型半导体层和在第一类型半导体层和第二类型半导体层之间的有源层。 第一电极与第一型半导体层连接。 第一电极包括彼此间隔开并绝缘的第一接触焊盘和电流感应电极。 第二电极相对于第一电极具有相反的极性。 第二电极包括形成在第二类型半导体层上并与第二类型半导体层电连接的透明导电层和形成在透明导电层上并与之电接触的金属导电层。

    Light emitting diode
    4.
    发明授权
    Light emitting diode 失效
    发光二极管

    公开(公告)号:US07728344B2

    公开(公告)日:2010-06-01

    申请号:US12242591

    申请日:2008-09-30

    Abstract: A light emitting diode includes a reflective cup, an LED chip, and many electrodes, a first light scattering layer, and a phosphor layer. The reflective cup includes a bottom and a sidewall extending from the bottom. The LED chip is received in the reflective cup and mounted on the bottom thereof for emitting first light of a first wavelength. The electrodes each has a first end electrically connected to the LED chip and an opposite second end exposed at an outer surface of the reflective cup. The first light scattering layer formed in the reflective cup on the bottom thereof and covering the LED chip, which has a concave surface at an opposite side thereof to the LED chip. The phosphor layer formed on the concave surface of the light scattering layer for converting part of the first light into second light of a second wavelength.

    Abstract translation: 发光二极管包括反射杯,LED芯片和许多电极,第一光散射层和磷光体层。 反射杯包括底部和从底部延伸的侧壁。 LED芯片被容纳在反射杯中并安装在其底部以发射第一波长的第一光。 电极各自具有电连接到LED芯片的第一端和暴露在反射杯的外表面的相对的第二端。 第一光散射层形成在其底部的反射杯中并且覆盖LED芯片,该LED芯片在其与LED芯片的相对侧具有凹面。 形成在光散射层的凹面上的荧光体层,用于将第一光的一部分转换为第二波长的第二光。

    METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF
    6.
    发明申请
    METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF 有权
    制备III类氮化物半导体的光电器件及其结构的方法

    公开(公告)号:US20090224283A1

    公开(公告)日:2009-09-10

    申请号:US12396750

    申请日:2009-03-03

    CPC classification number: H01L33/007 H01L33/0079

    Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

    Abstract translation: 一种制造III族氮化物半导体的光电器件的方法,其中所述方法包括以下步骤:在临时衬底的表面上形成第一III族氮化物半导体层; 使用光刻和蚀刻工艺图案化第一III族氮化物半导体层; 在所述图案化的第一III族氮化物半导体层上形成第二III族氮化物半导体层; 在所述第二III族氮化物半导体层上形成导电层; 并且通过去除第一III族氮化物半导体层来释放临时衬底,以获得第二III族氮化物半导体层和导电层的复合物。

    ORAL ILLUMINATOR
    7.
    发明申请
    ORAL ILLUMINATOR 审中-公开
    口腔照明器

    公开(公告)号:US20090147531A1

    公开(公告)日:2009-06-11

    申请号:US12176252

    申请日:2008-07-18

    CPC classification number: A61B1/24 A61B1/0653 A61B1/0684 A61B1/07 A61C1/088

    Abstract: An oral illuminator includes a solid state light-emitting element emitting light, an optical fiber, and a light diffuser. The optical fiber is arranged between the solid state light-generating element and the diffuser for transmitting the light of the solid state light-generating element to the diffuser. The optical fiber has an incident surface optically coupled to the solid state light-generating element, and an emitting surface optically coupled to the diffuser.

    Abstract translation: 口腔照明器包括发光的固态发光元件,光纤和光扩散器。 光纤布置在固态发光元件和用于将固态发光元件的光透射到漫射器的漫射器之间。 光纤具有与固态发光元件光学耦合的入射表面和与散射器光耦合的发射表面。

    LIGHT SOURCE ASSEMBLY
    8.
    发明申请
    LIGHT SOURCE ASSEMBLY 审中-公开
    光源组件

    公开(公告)号:US20090109678A1

    公开(公告)日:2009-04-30

    申请号:US12135864

    申请日:2008-06-09

    Abstract: In one embodiment, an exemplary light source assembly includes a light source device, a optical component, and a light pervious filling layer interposed between the light source and the optical component. The light source includes a light pervious cover. The light pervious filling layer can reduce a refraction loss and reflection loss of light.

    Abstract translation: 在一个实施例中,示例性光源组件包括插入在光源和光学部件之间的光源装置,光学部件和透光性填充层。 光源包括透光罩。 透光填充层可以减少光的折射损失和反射损失。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20080246047A1

    公开(公告)日:2008-10-09

    申请号:US12031473

    申请日:2008-02-14

    CPC classification number: H01L33/405 H01L33/387 H01L33/46

    Abstract: A semiconductor light-emitting device comprises an N-type semiconductor layer, an active layer formed on the surface of the N-type semiconductor layer, a P-type semiconductor layer formed on the surface of the active layer, and a reflective layer formed on the surface of the P-type semiconductor layer. A plurality of ohmic contact blocks with electrical properties of ohmic contact are on the surface of the reflective layer adjacent to the P-type semiconductor layer, and the remaining part of the surface acts as the reflective regions with higher reflectivity, and the reflective regions can effectively reflect the light generated from the active layer.

    Abstract translation: 半导体发光器件包括N型半导体层,形成在N型半导体层的表面上的有源层,形成在有源层的表面上的P型半导体层和形成在有源层的表面上的反射层 P型半导体层的表面。 在与P型半导体层相邻的反射层的表面上,具有欧姆接触电特性的多个欧姆接触块,其余部分作为具有较高反射率的反射区域,反射区域 有效地反射从活性层产生的光。

    Light emitting diode and fabrication thereof
    10.
    发明授权
    Light emitting diode and fabrication thereof 失效
    发光二极管及其制造

    公开(公告)号:US08278645B2

    公开(公告)日:2012-10-02

    申请号:US12503714

    申请日:2009-07-15

    CPC classification number: H01L33/0079 H01L33/007 H01L33/405 H01L33/46

    Abstract: A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.

    Abstract translation: 公开了一种发光二极管,其中发光二极管包括用于增强发光二极管内的光反射效率的金属反射层,并降低电阻以避免功率损耗。 此外,发光二极管还包括夹在金属反射层和半导体层之间的缓冲层,其中缓冲层与金属和非金属透明材料混合,以减少半导体和金属之间的应力,以减少 模具开裂的可能性。

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