Abstract:
Higher power light emitting diode (LED) modules are thermally managed by thermal coupling to a heat sink. An ion wind fan can be used to provide forced convection for the heat sink. In such a light device, in one embodiment the present invention includes electrically connecting the heat sink to the low voltage terminal of the LED driver, thereby controlling the potential of the heat sink.
Abstract:
A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements.
Abstract:
An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode electrically is connected with the first-type semiconductor layer. The first electrode includes a first contact pad and a current induced electrode spaced apart and insulated from each other. The second electrode has an opposite polarity with respect to the first electrode. The second electrode includes a transparent conductive layer formed on and electrically connected with the second-type semiconductor layer and a metallic conductive layer formed on the transparent conductive layer and in electrical contact therewith.
Abstract:
A light emitting diode includes a reflective cup, an LED chip, and many electrodes, a first light scattering layer, and a phosphor layer. The reflective cup includes a bottom and a sidewall extending from the bottom. The LED chip is received in the reflective cup and mounted on the bottom thereof for emitting first light of a first wavelength. The electrodes each has a first end electrically connected to the LED chip and an opposite second end exposed at an outer surface of the reflective cup. The first light scattering layer formed in the reflective cup on the bottom thereof and covering the LED chip, which has a concave surface at an opposite side thereof to the LED chip. The phosphor layer formed on the concave surface of the light scattering layer for converting part of the first light into second light of a second wavelength.
Abstract:
A photocatalyst device includes a photocatalyst member and a light source. The light source is configured to emit ultraviolet light to the photocatalyst member. The ultraviolet light has a wavelength equal to or less than about 400 nanometers, and more than 365 nanometers.
Abstract:
A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.
Abstract:
An oral illuminator includes a solid state light-emitting element emitting light, an optical fiber, and a light diffuser. The optical fiber is arranged between the solid state light-generating element and the diffuser for transmitting the light of the solid state light-generating element to the diffuser. The optical fiber has an incident surface optically coupled to the solid state light-generating element, and an emitting surface optically coupled to the diffuser.
Abstract:
In one embodiment, an exemplary light source assembly includes a light source device, a optical component, and a light pervious filling layer interposed between the light source and the optical component. The light source includes a light pervious cover. The light pervious filling layer can reduce a refraction loss and reflection loss of light.
Abstract:
A semiconductor light-emitting device comprises an N-type semiconductor layer, an active layer formed on the surface of the N-type semiconductor layer, a P-type semiconductor layer formed on the surface of the active layer, and a reflective layer formed on the surface of the P-type semiconductor layer. A plurality of ohmic contact blocks with electrical properties of ohmic contact are on the surface of the reflective layer adjacent to the P-type semiconductor layer, and the remaining part of the surface acts as the reflective regions with higher reflectivity, and the reflective regions can effectively reflect the light generated from the active layer.
Abstract:
A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.